JPS6425573A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS6425573A JPS6425573A JP18105587A JP18105587A JPS6425573A JP S6425573 A JPS6425573 A JP S6425573A JP 18105587 A JP18105587 A JP 18105587A JP 18105587 A JP18105587 A JP 18105587A JP S6425573 A JPS6425573 A JP S6425573A
- Authority
- JP
- Japan
- Prior art keywords
- cvd method
- pressure cvd
- patterning
- region
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 4
- 238000000059 patterning Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 230000001133 acceleration Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To provide a TFT capable of being reduced in off-current upon light irradiation by producing specific density defects only in a specific area within a TFT channel region other than space charge regions formed in the vicinity of drain and source junctions. CONSTITUTION:An islet-like element region 8 is formed by depositing a polycrystalline silicon film of, for example, 1500 Kt on an insulating substrate 1 by a reduced pressure CVD method and subjecting the same to patterning. Then, a resist 11 is formed and employed as a mask to yield a high density defect layer 10 by doping the islet-like element region 8 with Ar<+> ions under conditions of acceleration voltage of 110 KeV and the dosage of 1X10<16>cm<-2>. In succession, a SiO2 film is deposited by an ordinary pressure CVD method, followed by deposition thereon of a polycrystalline silicon film by a reduced pressure CVD method and patterning of the same to form a gate insulating film 2 and a gate electrode 3. In addition, a drain region 5 and a source region 6 are formed by ion-doping of p<+> for example. Furthermore, an interlayer insulating film is formed by the ordinary pressure CVD method, through which contact holes are made in turn. Finally, Al is vapordeposited and subjected to patterning to form a contact electrode 7 and hence a TFT.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18105587A JPS6425573A (en) | 1987-07-22 | 1987-07-22 | Thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18105587A JPS6425573A (en) | 1987-07-22 | 1987-07-22 | Thin film transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6425573A true JPS6425573A (en) | 1989-01-27 |
Family
ID=16093987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18105587A Pending JPS6425573A (en) | 1987-07-22 | 1987-07-22 | Thin film transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6425573A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02280380A (en) * | 1989-04-20 | 1990-11-16 | Mitsubishi Electric Corp | Semiconductor device |
EP0735592A2 (en) * | 1995-03-31 | 1996-10-02 | Nippon Telegraph And Telephone Corporation | MOS thin film transistor and method of fabricating the same |
EP0801427A2 (en) * | 1996-04-11 | 1997-10-15 | Matsushita Electric Industrial Co., Ltd. | Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device |
KR100233803B1 (en) * | 1995-10-09 | 1999-12-01 | 마찌다 가쯔히꼬 | Thin film transistor and the manufacturing method thereof |
WO2001050516A1 (en) * | 2000-01-07 | 2001-07-12 | Seiko Epson Corporation | Method of manufacturing a thin-film transistor |
WO2001050515A1 (en) * | 2000-01-07 | 2001-07-12 | Seiko Epson Corporation | Thin-film transistor |
US6765265B2 (en) * | 2000-01-07 | 2004-07-20 | Seiko Epson Corporation | System and method for manufacturing a thin film transistor |
-
1987
- 1987-07-22 JP JP18105587A patent/JPS6425573A/en active Pending
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02280380A (en) * | 1989-04-20 | 1990-11-16 | Mitsubishi Electric Corp | Semiconductor device |
EP0735592A2 (en) * | 1995-03-31 | 1996-10-02 | Nippon Telegraph And Telephone Corporation | MOS thin film transistor and method of fabricating the same |
EP0735592A3 (en) * | 1995-03-31 | 1997-11-05 | Nippon Telegraph And Telephone Corporation | MOS thin film transistor and method of fabricating the same |
KR100233803B1 (en) * | 1995-10-09 | 1999-12-01 | 마찌다 가쯔히꼬 | Thin film transistor and the manufacturing method thereof |
EP0801427A2 (en) * | 1996-04-11 | 1997-10-15 | Matsushita Electric Industrial Co., Ltd. | Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device |
EP0801427A3 (en) * | 1996-04-11 | 1999-05-06 | Matsushita Electric Industrial Co., Ltd. | Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device |
WO2001050516A1 (en) * | 2000-01-07 | 2001-07-12 | Seiko Epson Corporation | Method of manufacturing a thin-film transistor |
WO2001050515A1 (en) * | 2000-01-07 | 2001-07-12 | Seiko Epson Corporation | Thin-film transistor |
US6621101B2 (en) | 2000-01-07 | 2003-09-16 | Seiko Epson Corporation | Thin-film transistor |
GB2358079B (en) * | 2000-01-07 | 2004-02-18 | Seiko Epson Corp | Thin-film transistor |
US6727123B2 (en) | 2000-01-07 | 2004-04-27 | Seiko Epson Corporation | Method for manufacturing a thin-film transistor comprising a recombination center |
GB2358080B (en) * | 2000-01-07 | 2004-06-02 | Seiko Epson Corp | Method of manufacturing a thin-film transistor |
US6765265B2 (en) * | 2000-01-07 | 2004-07-20 | Seiko Epson Corporation | System and method for manufacturing a thin film transistor |
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