JPS57187972A - Manufacture of solar cell - Google Patents

Manufacture of solar cell

Info

Publication number
JPS57187972A
JPS57187972A JP56072194A JP7219481A JPS57187972A JP S57187972 A JPS57187972 A JP S57187972A JP 56072194 A JP56072194 A JP 56072194A JP 7219481 A JP7219481 A JP 7219481A JP S57187972 A JPS57187972 A JP S57187972A
Authority
JP
Japan
Prior art keywords
layer
sih4
atoms
glow discharge
ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56072194A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Uchida
Michiya Kamiyama
Hiroshi Sakai
Shinji Nishiura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP56072194A priority Critical patent/JPS57187972A/en
Publication of JPS57187972A publication Critical patent/JPS57187972A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve conversion efficiency of a solar cell by a method wherein an i-layer which contains 5X10<16>-5X10<18>atoms/cm<3> of atoms of III-group elements is formed between a p-layer and an n-layer by decomposing reactive gas composed of Si compound to which III-group elements are added by glow discharge. CONSTITUTION:A p-layer 2 is formed on a stainless steel substrate 1 by glow discharge in mixed gas of B2H6 and SiH4 with the ratio B2H6/SiH4=10<-2>. Then an i-layer 3 is formed by the glow discharge in the mixed gas of B2H6 and SiH4 with the ratio B2H6/SiH4=10<-5>. Then an n-layer 4 is formed by the glow discharge in the mixed gas of PH3 and SiH4 with the ratio PH3/SiH4=10<-2>. Migration from the p-layer 2 in which density of B is high into the intermediate layer through the side touching the p-layer 2 can be expected, but practically the density of B in the most part of the intermediate layer is within 5X10<-16>- 5X10<18>atoms/cm<3> and the average density is 1X10<17>atoms/cm<3>.
JP56072194A 1981-05-15 1981-05-15 Manufacture of solar cell Pending JPS57187972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56072194A JPS57187972A (en) 1981-05-15 1981-05-15 Manufacture of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56072194A JPS57187972A (en) 1981-05-15 1981-05-15 Manufacture of solar cell

Publications (1)

Publication Number Publication Date
JPS57187972A true JPS57187972A (en) 1982-11-18

Family

ID=13482159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56072194A Pending JPS57187972A (en) 1981-05-15 1981-05-15 Manufacture of solar cell

Country Status (1)

Country Link
JP (1) JPS57187972A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115574A (en) * 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric converter
JPS59115575A (en) * 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS59229878A (en) * 1983-06-11 1984-12-24 Toa Nenryo Kogyo Kk Novel amorphous semiconductor element and manufacture thereof and device for manufacturing the same
EP0172484A2 (en) * 1984-08-07 1986-02-26 Siemens Aktiengesellschaft Amorphous silicon p-i-n solar cell
JPS6143486A (en) * 1984-08-06 1986-03-03 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Photoresponsing device having long term energy conversion stability and method of producing same device
US4692558A (en) * 1983-05-11 1987-09-08 Chronar Corporation Counteraction of semiconductor impurity effects
US5468653A (en) * 1982-08-24 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6346716B1 (en) * 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JP2013149951A (en) * 2011-12-21 2013-08-01 Panasonic Corp Thin-film solar cell and manufacturing method thereof

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US5468653A (en) * 1982-08-24 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
JPS59115575A (en) * 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd Photoelectric converter
US6346716B1 (en) * 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US4581476A (en) * 1982-12-23 1986-04-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JPS59115574A (en) * 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric converter
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US4692558A (en) * 1983-05-11 1987-09-08 Chronar Corporation Counteraction of semiconductor impurity effects
JPS59229878A (en) * 1983-06-11 1984-12-24 Toa Nenryo Kogyo Kk Novel amorphous semiconductor element and manufacture thereof and device for manufacturing the same
JPS6143486A (en) * 1984-08-06 1986-03-03 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Photoresponsing device having long term energy conversion stability and method of producing same device
EP0172484A2 (en) * 1984-08-07 1986-02-26 Siemens Aktiengesellschaft Amorphous silicon p-i-n solar cell
JP2013149951A (en) * 2011-12-21 2013-08-01 Panasonic Corp Thin-film solar cell and manufacturing method thereof

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