JPS571273A - Manufacture of amorphous silicon solar cell - Google Patents
Manufacture of amorphous silicon solar cellInfo
- Publication number
- JPS571273A JPS571273A JP7468480A JP7468480A JPS571273A JP S571273 A JPS571273 A JP S571273A JP 7468480 A JP7468480 A JP 7468480A JP 7468480 A JP7468480 A JP 7468480A JP S571273 A JPS571273 A JP S571273A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous
- glow discharge
- solar cell
- adhesion
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000006243 chemical reaction Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To enhance conversion efficiency and to improve adhesion between an amorphous layer and substrate, by decomposing raw material gas in DC glow discharge at first and then in high frequency discharge, and depositing amorphous Si. CONSTITUTION:The amorphous Si which is formed by the DC glow discharge has more excellent adhesion with a substrate than that of Si formed by the high frequency glow discharge. But the conversion efficiency of the former is inferior to the latter. The adhesion between amorphous Si layers formed by both glow discharge methods is far better than the adhesion with the substrate. In this constitution, the solar cell employing the amorphous Si which is not separated can be obtained, and the conversion efficiency can be enhanced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7468480A JPS571273A (en) | 1980-06-03 | 1980-06-03 | Manufacture of amorphous silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7468480A JPS571273A (en) | 1980-06-03 | 1980-06-03 | Manufacture of amorphous silicon solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS571273A true JPS571273A (en) | 1982-01-06 |
| JPS6156632B2 JPS6156632B2 (en) | 1986-12-03 |
Family
ID=13554292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7468480A Granted JPS571273A (en) | 1980-06-03 | 1980-06-03 | Manufacture of amorphous silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS571273A (en) |
-
1980
- 1980-06-03 JP JP7468480A patent/JPS571273A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6156632B2 (en) | 1986-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5777021A (en) | Manufacture of amorphous silicon | |
| JPS56122123A (en) | Semiamorphous semiconductor | |
| JPS5752176A (en) | Semiconductor device | |
| EP1489666A4 (en) | Compound thin-film solar cell and process for producing the same | |
| JPS5696877A (en) | Photoelectric converter | |
| JPS57187972A (en) | Manufacture of solar cell | |
| JPS5649521A (en) | Formation of thin film | |
| JPS571273A (en) | Manufacture of amorphous silicon solar cell | |
| JPS5963774A (en) | Thin-film silicon solar cell | |
| JPS558092A (en) | Fine film solar cell and its production method | |
| JPS56138970A (en) | Amorphous photoelectric converting element and manufacture thereof | |
| JPS571262A (en) | Solar cell | |
| JPS5745980A (en) | Amorphous solar battery and manufacture thereof | |
| JPS56114383A (en) | Solar energy converter | |
| JPS571272A (en) | Manufacture of amorphous silicon solar cell | |
| ES8201769A1 (en) | Photovoltaic cell suitable for manufacturing solar power units. | |
| JPS5680128A (en) | Manufacture of thin film | |
| JPS5651878A (en) | Manufacture of mis composition amorphous silicon solar cell | |
| JPS56122122A (en) | Manufacture of amorphous semiconductor | |
| JPS5723216A (en) | Manufacture of plasma reactor and semiconductor element | |
| JPS56101780A (en) | Solar cell | |
| JPS57202788A (en) | Manufacture of amorphous photoelectric conversion element | |
| JPS6095977A (en) | Photovoltaic device | |
| JPS5282087A (en) | Production of solar cell | |
| JPS57184258A (en) | Manufacture of photoelectric conversion semiconductor device |