JPS571272A - Manufacture of amorphous silicon solar cell - Google Patents

Manufacture of amorphous silicon solar cell

Info

Publication number
JPS571272A
JPS571272A JP7384280A JP7384280A JPS571272A JP S571272 A JPS571272 A JP S571272A JP 7384280 A JP7384280 A JP 7384280A JP 7384280 A JP7384280 A JP 7384280A JP S571272 A JPS571272 A JP S571272A
Authority
JP
Japan
Prior art keywords
amorphous
solar cell
layer
sih4
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7384280A
Other languages
Japanese (ja)
Other versions
JPS618594B2 (en
Inventor
Yoshiyuki Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP7384280A priority Critical patent/JPS571272A/en
Publication of JPS571272A publication Critical patent/JPS571272A/en
Publication of JPS618594B2 publication Critical patent/JPS618594B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain the amorphous Si solar cell characterized by high conversion efficiency by depositing the amorphous Si having high impurity concentration on a conductive substrate, crystallizing it, then layering the amorphous Si having low impurity concentration or intrinsic property, and obtaining an active region. CONSTITUTION:SnO2 18 is evaporated on a glass plate 19. Then about 1mol% B2H6 is added to SiH4+H2, and P<+> amorphous Si17 is formed by glow discharge decomposition. Heat treatment is performed in H2 and multicrystallization is achieved. An amorphous Si I layer 13 is deposited by the glow discharge decomposition of SiH4+H2. PH3 is added, N<+> amorphous Si 12 is layered, and thickness of a PIN layer 22 becomes about 1mum. An Al electrode 20 is attached. In this constitution, useless absorption of light in P<+> layer 17 is decreased, the current generated by light is increased, and photoelectric conversion efficiency can be enhanced by about 20-30%.
JP7384280A 1980-06-02 1980-06-02 Manufacture of amorphous silicon solar cell Granted JPS571272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7384280A JPS571272A (en) 1980-06-02 1980-06-02 Manufacture of amorphous silicon solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7384280A JPS571272A (en) 1980-06-02 1980-06-02 Manufacture of amorphous silicon solar cell

Publications (2)

Publication Number Publication Date
JPS571272A true JPS571272A (en) 1982-01-06
JPS618594B2 JPS618594B2 (en) 1986-03-15

Family

ID=13529790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7384280A Granted JPS571272A (en) 1980-06-02 1980-06-02 Manufacture of amorphous silicon solar cell

Country Status (1)

Country Link
JP (1) JPS571272A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955076A (en) * 1982-09-24 1984-03-29 Agency Of Ind Science & Technol Thin film solar battery
JPS59115575A (en) * 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS59224183A (en) * 1983-06-03 1984-12-17 Semiconductor Energy Lab Co Ltd Photoelectric converter device
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN=1979 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS5955076A (en) * 1982-09-24 1984-03-29 Agency Of Ind Science & Technol Thin film solar battery
JPH0351114B2 (en) * 1982-09-24 1991-08-05 Kogyo Gijutsuin
JPS59115575A (en) * 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS59224183A (en) * 1983-06-03 1984-12-17 Semiconductor Energy Lab Co Ltd Photoelectric converter device
JPH06101571B2 (en) * 1983-06-03 1994-12-12 株式会社半導体エネルギー研究所 Semiconductor device

Also Published As

Publication number Publication date
JPS618594B2 (en) 1986-03-15

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