JPS6154680A - Thin-film solar cell - Google Patents
Thin-film solar cellInfo
- Publication number
- JPS6154680A JPS6154680A JP59177091A JP17709184A JPS6154680A JP S6154680 A JPS6154680 A JP S6154680A JP 59177091 A JP59177091 A JP 59177091A JP 17709184 A JP17709184 A JP 17709184A JP S6154680 A JPS6154680 A JP S6154680A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transparent conductive
- mno
- solar cell
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 239000010408 film Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 2
- 238000010894 electron beam technology Methods 0.000 abstract description 2
- 230000003190 augmentative effect Effects 0.000 abstract 1
- 238000007788 roughening Methods 0.000 abstract 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- VASIZKWUTCETSD-UHFFFAOYSA-N oxomanganese Chemical compound [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- JUUYGPLMBNHCFZ-UHFFFAOYSA-N acetylene phosphane Chemical compound P.C#C JUUYGPLMBNHCFZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- -1 diborane Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
本発明は、透明絶縁基板を通じて、例えばアモルファス
シリコン（以下ａ−５ｉと記す）からなる光電極変換層
に入射する光によって生ずる光起電力を取り出すための
一方の電極として基板と光電極変換層の間に透明導電膜
が挿入された薄膜太陽電池に関する。The present invention uses a substrate and a photoelectrode conversion layer as one electrode for extracting photovoltaic force generated by light incident on a photoelectrode conversion layer made of, for example, amorphous silicon (hereinafter referred to as a-5i) through a transparent insulating substrate. The present invention relates to a thin film solar cell in which a transparent conductive film is inserted between.
従来のａ−３ｔ薄膜太陽電池の断面構造を第２図に示す
。同図において、ガラス基板−の上に設けられる透明導
電膜２は、通常５ｎＯｚ＋ ＩｎｚＯｓ＋ ＩＴＯ（イ
ンジウム酸化錫）、あるいはＩＴＯ膜の上にさらにＳｎ
Ｏ□膜を形成したものなどである。この上に透明導電膜
側からｐ形、ｉ形、ｎ形の積層構造になっているａ−３
ｔ膜３が設けられ、その上に通常アルミ。
銀などからなる裏面電極４が被着している。光５が、矢
印の方向から照射されることにより生ずる太陽電池の電
気的出力は、透明電極２と裏面電極４とから取り出され
る。ａ−３ｔ膜３の形成には通常プラズマＣＶＤ法が一
般に用いられる。すなわち、透明導電膜のつしたガラス
基板を真空槽に入れ １５０〜３００℃に加熱する。こ
の状態で必要に応じシラン、ジシラン、メタン、アセチ
レンフォスフイン、ジボラン、水素などのガスを流しな
がら高周波放電を起こし、ｐ＋ ｉ＋ ｎの各ａ
−５ｔ膜を形成する。
このような薄膜太陽電池は、半導体層の厚さが薄い上に
量産的な製造が容易であることから低価格の太陽電池と
して使用されているが、変換効率が、例えば単結晶シリ
コンを用いた太陽電池に比して低いという欠点があった
。この欠点を解消するための方策として、太陽電池に入
射する光のできるだけ多くの部分を光電変換に剥けるこ
とが考えられる。FIG. 2 shows the cross-sectional structure of a conventional A-3T thin film solar cell. In the figure, a transparent conductive film 2 provided on a glass substrate is usually made of 5nOz+InzOs+ITO (indium tin oxide) or an ITO film with an additional layer of Sn.
For example, an O□ film is formed. On top of this, a-3 has a laminated structure of p-type, i-type, and n-type from the transparent conductive film side.
A T film 3 is provided on which is usually aluminum. A back electrode 4 made of silver or the like is attached. Electrical output of the solar cell generated by irradiation of light 5 from the direction of the arrow is extracted from the transparent electrode 2 and the back electrode 4. A plasma CVD method is generally used to form the a-3T film 3. That is, a glass substrate with a transparent conductive film is placed in a vacuum chamber and heated to 150 to 300°C. In this state, a high-frequency discharge is generated while flowing a gas such as silane, disilane, methane, acetylene phosphine, diborane, hydrogen, etc. as necessary, and each a of p + i + n is
- Form a 5t film. Such thin-film solar cells are used as low-cost solar cells because the semiconductor layer is thin and mass production is easy, but the conversion efficiency is lower than that using, for example, single-crystal silicon. It has the disadvantage of being lower than solar cells. One possible way to overcome this drawback is to convert as much of the light incident on the solar cell as possible into photoelectric conversion.
本発明は、これに鑑みて入射光ができるだけ多く吸収さ
れて光電変換に利用されるような薄膜太陽電池を提供す
ることを目的とする。In view of this, an object of the present invention is to provide a thin film solar cell that absorbs as much incident light as possible and utilizes it for photoelectric conversion.
本発明によれば、透明導電膜と半導体薄膜との間に１０
０Å以下の厚さの一酸化マンガン（ＭｎＯ）からなる膜
が介在することにより半導体薄膜との界面の表面モホロ
ジーの変化による入射光散乱効果による特性向上を得る
ことによって上記の目的が達成される。According to the present invention, between the transparent conductive film and the semiconductor thin film, 10
The above object is achieved by improving the properties due to the incident light scattering effect due to the change in surface morphology at the interface with the semiconductor thin film due to the presence of a film made of manganese monoxide (MnO) with a thickness of 0 Å or less.
【発明の実施例】
第１図は本発明の一実施例の太陽電池の構造を示し、ガ
ラス基板１の上に１８００人の厚さのＩＴＯと２００人
の厚さのＳｎｏｗを被覆して透明導電膜２を形成し、そ
の基板の表面にＩ Ｘ １０−’Ｔｏｒｒの雰囲気圧に
てＭｎＯを電子ビームにより蒸着し、２０人の蒸着膜６
を得た。この基板をＭｎＯを蒸着していない基板と共に
同一槽内にて基板温度２３０℃に保ち、プラズマＣＶＤ
法によってａ−３ｔ膜３を形成した。
裏面電極４として銀を蒸着して疑似太陽光ＡＭＩを照射
し素子特性を測定したところ、第３図に示すような特性
が得られた。ＭｎＯの挿入膜のない素子特性が曲線３１
である。Ｖｏｃが０．７９Ｖ、 Ｊｓｃが１０．４ｍＡ
／ｃＪ曲線囚子ＦＦが０．７０．変換効率ＥＦＦが５．
８％であった。これに対し、曲線３２で示したＭｎＯの
蒸着膜を挿入した素子特性はＶｏｃが０．８Ｖ、Ｊｓｃ
が１３．９ｍＡ／ ｃ４ 、ＦＦが０．６５．ＥＦＦが
７．２％であった。
このような特性の向上は第４図に示した原理に基づくも
のと考えられる。第１図の矢印の方向から入射した光線
５はガラス板１の表面、ガラス板１と透明導電膜２との
界面で若干の反射と散乱を受けるものの、大部分は矢印
と同方向に透過し、透明導電膜２内を通り矢印の方向に
入射する。透明導電膜２と挿入膜６との界面でも同様に
若干の反射と散乱はあるが大部分はａ−５ｔ膜３と挿入
膜６との界面に達する。この時挿入膜のモホロジーが粗
い程第４図に示すような散乱が激しくなり、ａ−３ｉ膜
３内での光路が長くなって１層内で吸収する光エネルギ
ーが増大し、太陽電池の特性向上につながる。
上記の実施例におけるＭｎＯ蒸着膜６の表面とＭｎＯを
蒸着していない透明導電膜（Ｓｎｏｗ） ２の表面を走
程度を有していた。ＭｎＯ膜の表面モホロジーは膜の形
成条件によって異なるが、他の材料、例えばＹｇＯｓ＋
ＮｉＯ＋Ｂ１１Ｏｓ、 Ｔｉ１ｔなどの蒸着膜を透明導
電膜とａ −３ｔ膜の間に挿入したときには特性向上は
認められなかった。このことはＭｎＯ蒸着膜の表面モホ
ロジーがａ −３ｉ膜内の光路長の増大につながる散乱
を形成する効果を有することを示している。
しかしＭｎＯ膜の厚さが１００人を越えると直列抵抗成
分が増大し、ｐｐが低下して逆に特性を悪化さ七゛る。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows the structure of a solar cell according to an embodiment of the present invention, in which a glass substrate 1 is coated with ITO to a thickness of 1800 mm and Snow to a thickness of 200 mm to make it transparent. A conductive film 2 was formed, and MnO was evaporated onto the surface of the substrate using an electron beam at an atmospheric pressure of I x 10-'Torr.
I got it. This substrate was kept at a substrate temperature of 230°C in the same tank together with a substrate on which MnO was not deposited, and then subjected to plasma CVD.
The a-3t film 3 was formed by the method. When silver was deposited as the back electrode 4 and device characteristics were measured by irradiating it with simulated sunlight AMI, the characteristics shown in FIG. 3 were obtained. The device characteristics without the MnO inserted film are curve 31.
It is. Voc is 0.79V, Jsc is 10.4mA
/cJ curve prisoner FF is 0.70. Conversion efficiency EFF is 5.
It was 8%. On the other hand, the device characteristics shown by curve 32 in which a vapor deposited MnO film is inserted have Voc of 0.8V and Jsc
is 13.9mA/c4, FF is 0.65. EFF was 7.2%. It is believed that such improvement in characteristics is based on the principle shown in FIG. Although the light ray 5 incident from the direction of the arrow in FIG. 1 is slightly reflected and scattered at the surface of the glass plate 1 and the interface between the glass plate 1 and the transparent conductive film 2, most of it is transmitted in the same direction as the arrow. , passes through the transparent conductive film 2 and enters in the direction of the arrow. Similarly, there is some reflection and scattering at the interface between the transparent conductive film 2 and the insertion film 6, but most of it reaches the interface between the a-5t film 3 and the insertion film 6. At this time, the coarser the morphology of the intercalated film, the more intense the scattering as shown in Figure 4 becomes, the longer the optical path within the a-3i film 3 becomes, and the more light energy is absorbed within one layer, resulting in changes in the characteristics of the solar cell. Leads to improvement. The surface of the MnO vapor-deposited film 6 in the above example and the surface of the transparent conductive film (Snow) 2 on which MnO was not vapor-deposited had a certain degree of running. Although the surface morphology of the MnO film differs depending on the film formation conditions, other materials such as YgOs+
No improvement in characteristics was observed when a deposited film of NiO+B11Os, Ti1t, etc. was inserted between the transparent conductive film and the a-3t film. This indicates that the surface morphology of the MnO deposited film has the effect of creating scattering that leads to an increase in the optical path length within the a-3i film. However, when the thickness of the MnO film exceeds 100 mm, the series resistance component increases, the pp value decreases, and the characteristics deteriorate.
本発明は透明絶縁基板上に設けられる透明導電膜の上に
ＭｎＯ膜を被着することにより透明導電膜の表面よりも
粗い表面モホロジーを形成し、その上に設けられる光電
変換ｌＩ域の半導体薄膜に入射する光を散乱させること
によって光電変換に向けられる光を多くするもので、薄
膜太陽電池の変換効率の向上に極めて有効である。The present invention forms a surface morphology rougher than the surface of the transparent conductive film by depositing an MnO film on a transparent conductive film provided on a transparent insulating substrate, and a semiconductor thin film in the photoelectric conversion II region is provided on the MnO film. This method increases the amount of light directed to photoelectric conversion by scattering incident light, and is extremely effective in improving the conversion efficiency of thin-film solar cells.
第１図は本発明の一実施例の太陽電池の断面図、第２図
は従来例の太陽電池の断面図、第３図は本発明の一実施
例と従来例の太陽電池の出力特性線図、第４図は本発明
の詳細な説明図である。
１ニガラス基板、２：透明導電膜、３ ： ａ −３ｉ
膜、４：裏面電極、６：ＭｎＯ膜。
第４ロFig. 1 is a cross-sectional view of a solar cell according to an embodiment of the present invention, Fig. 2 is a cross-sectional view of a conventional solar cell, and Fig. 3 is an output characteristic line of a solar cell according to an embodiment of the present invention and a conventional solar cell. 4 are detailed explanatory diagrams of the present invention. 1 glass substrate, 2: transparent conductive film, 3: a-3i
Film, 4: Back electrode, 6: MnO film. 4th b
Claims (1)
って生ずる光起電力取り出しのための一方の電極として
基板と半導体薄膜の間に透明導電膜が挿入されるものに
おいて、透明導電膜と半導体薄膜の間に厚さ１００Å以
下のＭｎＯ膜が介在したことを特徴とする薄膜太陽電池
。1) In a device in which a transparent conductive film is inserted between the substrate and the semiconductor thin film as one electrode for extracting photovoltaic force generated by light incident on the semiconductor thin film through the transparent insulating substrate, the space between the transparent conductive film and the semiconductor thin film is A thin film solar cell characterized in that a MnO film with a thickness of 100 Å or less is interposed therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59177091A JPS6154680A (en) | 1984-08-25 | 1984-08-25 | Thin-film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59177091A JPS6154680A (en) | 1984-08-25 | 1984-08-25 | Thin-film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6154680A true JPS6154680A (en) | 1986-03-18 |
Family
ID=16024970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59177091A Pending JPS6154680A (en) | 1984-08-25 | 1984-08-25 | Thin-film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6154680A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63211685A (en) * | 1987-02-26 | 1988-09-02 | Kanegafuchi Chem Ind Co Ltd | Photovoltaic device manufacture thereof |
| JPH02143569A (en) * | 1988-11-25 | 1990-06-01 | Agency Of Ind Science & Technol | Photoelectric conversion element |
| JPH02166099A (en) * | 1988-12-20 | 1990-06-26 | Niigata Eng Co Ltd | Reception of liquid |
-
1984
- 1984-08-25 JP JP59177091A patent/JPS6154680A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63211685A (en) * | 1987-02-26 | 1988-09-02 | Kanegafuchi Chem Ind Co Ltd | Photovoltaic device manufacture thereof |
| JPH02143569A (en) * | 1988-11-25 | 1990-06-01 | Agency Of Ind Science & Technol | Photoelectric conversion element |
| JPH02166099A (en) * | 1988-12-20 | 1990-06-26 | Niigata Eng Co Ltd | Reception of liquid |
| JPH0462960B2 (en) * | 1988-12-20 | 1992-10-08 | Niigata Engineering Co Ltd |
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