JPS57202788A - Manufacture of amorphous photoelectric conversion element - Google Patents

Manufacture of amorphous photoelectric conversion element

Info

Publication number
JPS57202788A
JPS57202788A JP56088398A JP8839881A JPS57202788A JP S57202788 A JPS57202788 A JP S57202788A JP 56088398 A JP56088398 A JP 56088398A JP 8839881 A JP8839881 A JP 8839881A JP S57202788 A JPS57202788 A JP S57202788A
Authority
JP
Japan
Prior art keywords
gas
sih4
gas cylinder
reaction tube
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56088398A
Other languages
Japanese (ja)
Other versions
JPH0450756B2 (en
Inventor
Masatoshi Kitagawa
Shinichiro Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56088398A priority Critical patent/JPS57202788A/en
Publication of JPS57202788A publication Critical patent/JPS57202788A/en
Publication of JPH0450756B2 publication Critical patent/JPH0450756B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain the element with a high conversion efficiency by a method wherein, when an amorphous photoelectric conversion element is formed in a glow discharge reaction tube using SiH4 and H2, an intrinsic layer is deposited while the mixture ratio of SiH4 and H2 is being changed. CONSTITUTION:A lower electrode 4 and a substrate holder and concurrently upper electrode 5 with a heater are arranged in the glow discharge reactor tube 1 with an exhaust port 2 and a gas introducing port 3 opposing each other and leaving the prescribed interval between them. Then, an SiH4 gas cylinder 6, an H2 gas cylinder 7, a diborane gas cylinder 8 and a phosphine gas cylinder 9 are connected to the gas introducing port 3 respectively. The element is constituted as above, and after the reaction tube has been evacuated using the exhaust port 2 by a rotary pump or the like, the gas having SiH4 and H2 as principal ingredients and the diborane and phosphine gas ?which are diluted by H2 are introduced into the reaction tube 1 until the internal pressure reaches 0.1-1 Torr, the intrinsic amorphous Si film at Fermi level of 0.6-1.0 is deposited on the substrate which is adhered to the lower surface of the electrode 5. Internal potential of 0.4V can be generated on the intrinsic layer by continuously changing the volumetric ratio of SiH4 and H2 gas.
JP56088398A 1981-06-09 1981-06-09 Manufacture of amorphous photoelectric conversion element Granted JPS57202788A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56088398A JPS57202788A (en) 1981-06-09 1981-06-09 Manufacture of amorphous photoelectric conversion element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56088398A JPS57202788A (en) 1981-06-09 1981-06-09 Manufacture of amorphous photoelectric conversion element

Publications (2)

Publication Number Publication Date
JPS57202788A true JPS57202788A (en) 1982-12-11
JPH0450756B2 JPH0450756B2 (en) 1992-08-17

Family

ID=13941680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56088398A Granted JPS57202788A (en) 1981-06-09 1981-06-09 Manufacture of amorphous photoelectric conversion element

Country Status (1)

Country Link
JP (1) JPS57202788A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106531834A (en) * 2016-11-30 2017-03-22 华中科技大学 HIT solar cell and preparation method therefor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56138970A (en) * 1980-03-31 1981-10-29 Agency Of Ind Science & Technol Amorphous photoelectric converting element and manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56138970A (en) * 1980-03-31 1981-10-29 Agency Of Ind Science & Technol Amorphous photoelectric converting element and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106531834A (en) * 2016-11-30 2017-03-22 华中科技大学 HIT solar cell and preparation method therefor

Also Published As

Publication number Publication date
JPH0450756B2 (en) 1992-08-17

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