JPS62213281A - Transparent conductive film - Google Patents
Transparent conductive filmInfo
- Publication number
- JPS62213281A JPS62213281A JP61056628A JP5662886A JPS62213281A JP S62213281 A JPS62213281 A JP S62213281A JP 61056628 A JP61056628 A JP 61056628A JP 5662886 A JP5662886 A JP 5662886A JP S62213281 A JPS62213281 A JP S62213281A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- tin oxide
- conductive film
- compound
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 150000001875 compounds Chemical class 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 229910052731 fluorine Inorganic materials 0.000 abstract description 8
- 239000011737 fluorine Substances 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 4
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 abstract description 2
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 abstract description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 3
- 230000003647 oxidation Effects 0.000 abstract 2
- NPNPZTNLOVBDOC-UHFFFAOYSA-N 1,1-difluoroethane Chemical compound CC(F)F NPNPZTNLOVBDOC-UHFFFAOYSA-N 0.000 abstract 1
- BHNZEZWIUMJCGF-UHFFFAOYSA-N 1-chloro-1,1-difluoroethane Chemical compound CC(F)(F)Cl BHNZEZWIUMJCGF-UHFFFAOYSA-N 0.000 abstract 1
- VOPWNXZWBYDODV-UHFFFAOYSA-N Chlorodifluoromethane Chemical compound FC(F)Cl VOPWNXZWBYDODV-UHFFFAOYSA-N 0.000 abstract 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 abstract 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 abstract 1
- PKKGKUDPKRTKLJ-UHFFFAOYSA-L dichloro(dimethyl)stannane Chemical compound C[Sn](C)(Cl)Cl PKKGKUDPKRTKLJ-UHFFFAOYSA-L 0.000 abstract 1
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 abstract 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 150000003606 tin compounds Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は酸化錫を主成分とする二層構造をもった光電素
子用透明導電膜特に太陽電池用透明導電膜に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a transparent conductive film for photoelectric devices, particularly for solar cells, having a two-layer structure containing tin oxide as a main component.
近年、透明導電基板に非晶質シリコン（ａ−８ｉ）を用
いた光電変換素子を形成し、次いでＡＩ等の電極を形成
した低コストの太陽電池が知られている。In recent years, low-cost solar cells have been known in which a photoelectric conversion element using amorphous silicon (a-8i) is formed on a transparent conductive substrate, and then electrodes such as AI are formed.
かかるａ−Ｓｉ太陽電池は光電交換効率が他の結晶半導
体を用いた太陽電池に比べ低いことから、それを大にす
るため種々の対策が施されている。Since the photoelectric exchange efficiency of such a-Si solar cells is lower than that of solar cells using other crystalline semiconductors, various measures have been taken to increase the photoelectric exchange efficiency.
その一つとして、低抵抗で、且つ高光透過率の多結晶酸
化錫膜を付着した透明基材が用いられている。As one of them, a transparent base material having a polycrystalline tin oxide film attached thereto with low resistance and high light transmittance is used.
しかしながら、多結晶酸化錫膜を透明導電膜上にａ−３
ｉ太陽電池を形成すると、界面の接合性が悪く、光電変
換効率を高めることができない欠点があった。However, a-3 polycrystalline tin oxide film is applied on a transparent conductive film
When an i-solar cell was formed, there was a drawback that the bonding properties at the interface were poor and the photoelectric conversion efficiency could not be increased.
本発明は前記問題点を解決するためになされたものであ
って、光電素子の光電変換効率を高める０に好適な光電
素子用透明導電膜を提供するものである。The present invention has been made to solve the above-mentioned problems, and provides a transparent conductive film for a photoelectric device that is suitable for increasing the photoelectric conversion efficiency of the photoelectric device.
すなわち、本発明は多結晶酸化錫を主成分とする透明導
電膜と、非晶質酸化錫を主成分とする透明導電膜からな
る二層構造を有する透明導電膜に関する。That is, the present invention relates to a transparent conductive film having a two-layer structure consisting of a transparent conductive film mainly composed of polycrystalline tin oxide and a transparent conductive film mainly composed of amorphous tin oxide.
本発明においてはおよそりＯＯ°Ｃ以上の高温に加熱し
た透明基板に錫化合物及びフッ素を含む化合物を接触さ
せ、熱分解酸化反応により、多結晶の酸化錫膜を堆積さ
せ、さらに多結晶酸化錫膜を堆積した西明基板をおよそ
≠００℃未満の温度に加熱し、錫化合物及びフッ素を含
む化合物を接触させ熱分解酸化反応により、該多結晶酸
化錫膜上に非晶質酸化錫膜を堆積させることにより二層
構造を有する透明導電膜を形成できる。In the present invention, a tin compound and a compound containing fluorine are brought into contact with a transparent substrate heated to a high temperature of about OO°C or higher, a polycrystalline tin oxide film is deposited by a thermal decomposition oxidation reaction, and then a polycrystalline tin oxide film is deposited. The Seimei substrate on which the film has been deposited is heated to a temperature below approximately ≠00°C, and a tin compound and a compound containing fluorine are brought into contact with each other to form an amorphous tin oxide film on the polycrystalline tin oxide film through a thermal decomposition oxidation reaction. By depositing it, a transparent conductive film having a two-layer structure can be formed.
（但しｎ −／−１１） 、 （ＣＨ３）２５ｎＨ２、
（ＣＪ９）３ＳｎＨ及び（Ｃ＋Ｈ９）２ｓｎ（ＣＯＯＣ
Ｈ３）２等であり、フッ素を含む化合物としては、ＣＨ
３Ｃ！ＨＦ２．ＣＨ３ＣＯ１Ｆ２ｙＣＨＯｌＦ２ 、Ｃ
ＨＦ３ ｙｃＦ２ｃ１２ 、ＣＦ３Ｃｌ、ＣＦ３Ｂｒ等
がある。(However, n −/−11), (CH3)25nH2,
(CJ9)3SnH and (C+H9)2sn(COOC
H3)2, etc., and as a compound containing fluorine, CH
3C! HF2. CH3CO1F2yCHOIF2,C
Examples include HF3ycF2c12, CF3Cl, CF3Br, and the like.
本発明において、これらの錫化合物及びフッ素を含む化
合物を加熱した透明基板に接触させて熱分Ｍ酸化反応を
させるには錫化合物蒸気とフッ素を含む化合物とを酸化
性ガス中で高温の透明基板に接触させる気相化学反応法
（ＣＶＤ法）か、あるいは錫化合物等の溶液をスプレー
で加熱された基板に吹き付けるスプレー法等により行う
ことができる。基板上に多結晶酸化錫膜な形成するには
、およそ弘り０℃〜≦ＯＯ″ＣＫ基板を加熱して、ＣＶ
Ｄ法により形成することが好ましく、基板上に形成した
多結晶酸化錫膜上に非晶質酸化錫膜を形成するには、お
よそ２りＯ″Ｃ−≠ＯＯ″Ｃに基板を加熱して、ＣＶＤ
法により形成することが好ましい。In the present invention, in order to cause a thermal M oxidation reaction by bringing these tin compounds and fluorine-containing compounds into contact with a heated transparent substrate, the tin compound vapor and the fluorine-containing compound are placed on a hot transparent substrate in an oxidizing gas. This can be carried out by a vapor phase chemical reaction method (CVD method) in which the heated substrate is brought into contact with the substrate, or by a spray method in which a solution of a tin compound or the like is sprayed onto the heated substrate. To form a polycrystalline tin oxide film on a substrate, heat the CK substrate to approximately 0°C to ≦OO″ and apply CV
It is preferable to form by method D, and in order to form an amorphous tin oxide film on a polycrystalline tin oxide film formed on a substrate, the substrate is heated to approximately 2°C-≠OO″C. ,CVD
It is preferable to form by a method.
本発明は透明導電膜を多結晶酸化錫膜層と非晶質酸化錫
膜層とを有する二層構造としたことにより、透明導電膜
の抵抗を低くすることができ、かつ光電変換素子のｐ型
半導体層と接触する透明導電膜を多結晶酸化錫から非晶
質酸化錫に変えたことにより透明導電膜と光電変換素子
との接合性が改良される。In the present invention, the transparent conductive film has a two-layer structure having a polycrystalline tin oxide film layer and an amorphous tin oxide film layer, so that the resistance of the transparent conductive film can be lowered, and the p By changing the transparent conductive film in contact with the type semiconductor layer from polycrystalline tin oxide to amorphous tin oxide, the bonding properties between the transparent conductive film and the photoelectric conversion element are improved.
大きさが、＋ｊ（ｍ）ｘ３Ｑ（ｍ）、厚味／、／（ｍｍ
） ノ酸化珪素被膜付ソーダライムガラスを十分に洗浄
、乾燥しガラス基板とした。このガラス基板上ニ以下の
ようにして透明導電膜を付着した。The size is +j (m) x 3Q (m), thickness /, / (mm
) Soda lime glass coated with silicon oxide was thoroughly washed and dried to form a glass substrate. A transparent conductive film was deposited on this glass substrate in the following manner.
モツプチル錫トリクロライドの蒸気、水蒸気、酸素ガス
八ｌ−ジフルオロエタンガスおよび窒素ガスの調整され
た混合気体を用いＣＶＤ法によりｊ！Ｏ″ＣＫ加熱され
たガラス基板上に多結晶酸化錫膜を形成した。得られた
多結晶酸化錫膜の膜厚は、Ｏ＃３２μｍであった。The j! A polycrystalline tin oxide film was formed on a glass substrate heated by O″CK. The thickness of the obtained polycrystalline tin oxide film was O#32 μm.
この多結晶酸化ｌｕ＃を堆積させたガラス基板を３ｊＯ
℃に加熱し、モツプチル錫トリクロライドの蒸気、水蒸
気、酸素ガス、／、／−ジフルオロエタンガスおよび窒
素ガスの調整された混合気体を用いＣＶＤ法により、多
結晶酸化錫膜上に非晶質酸化銅膜を形成した。得られた
非晶質酸化錫膜の膜厚は０．０１μｍであった。この０
．３Ｊμｍの合計膜厚を有する二層膜の面積抵抗は第１
表に示した通り／／、３２７口であった。The glass substrate on which this polycrystalline oxide lu# is deposited is 3jO
Amorphous copper oxide was deposited on a polycrystalline tin oxide film by heating to ℃ and using a controlled gas mixture of motsputyltin trichloride vapor, water vapor, oxygen gas, /, /-difluoroethane gas, and nitrogen gas. A film was formed. The thickness of the obtained amorphous tin oxide film was 0.01 μm. This 0
．． The sheet resistance of the two-layer film with a total film thickness of 3 J μm is the first
As shown in the table, there were 327 mouths.
これを用いて、アモルファスシリコン太陽電池を以下の
手順で作成した。Using this, an amorphous silicon solar cell was created according to the following procedure.
モノシラン（ＳｉＨ４）ガスを主成分とする原料ガスを
用いて／７ｃ）Ｐａ程度の圧力下で容量結合型高周波グ
ロー放電装置により、
（１）ｐ型半導体層（ホウ素ドープのａ−６ｉ（３：
Ｈ。Using a raw material gas containing monosilane (SiH4) gas as the main component and using a capacitively coupled high-frequency glow discharge device under a pressure of about /7c) Pa, (1) a p-type semiconductor layer (boron-doped a-6i (3:
H.
約０．０１３μｍ厚）
（２）真性半導体層（ａ−Ｓｉ：Ｈ，約（７，ｊ＃ｍ厚
）（３Ｊ ｎ型半導体ＷＩ（リンドープのマイクロク
リスタリンＳｉ（μ０−８ｉ） ’Ｈ＋ ｈ Ｏ、Ｏｊ
Ｏｔｔｍ厚）をそれぞれ順番に堆積させ、最後ＫＡｊ
ｔ＆（約０、／μｍ厚）を真空中（約／ｃ７−４Ｐａ）
で蒸着法により作成した。(approx. 0.013 μm thick) (2) Intrinsic semiconductor layer (a-Si:H, approx. Oj
Ottm thickness) are deposited in order, and finally KAj
t & (approx. 0,/μm thickness) in vacuum (approx./c7-4Pa)
It was created using the vapor deposition method.
上記ＡＩ＠極を作成する際基板上に直径コ簡の穴があい
たマスクをのせておき、直径２閣の太陽電池を１６ケ作
成した。When creating the above AI@pole, a mask with a hole in the diameter of a square was placed on the substrate, and 16 solar cells with a diameter of 2 cm were created.
得られた太陽を池ＫＡＭ／の１００ｍＷ／ａｄの光を照
射し、エネルギー変換効率を測定した。得られた測定結
果を第１表に示す。The obtained sun was irradiated with light of 100 mW/ad from the pond KAM/, and the energy conversion efficiency was measured. The measurement results obtained are shown in Table 1.
第１表
なお、比較例として実施例と同一方法により、酸化珪素
被膜付ソーダライムガラス上に膜厚が０．３１μｍの多
結晶酸化錫膜を形成し、面積抵抗を測定したところ第１
表に示す如＜ｉｏ、ｓΩ／口であり、このガラス上に形
成した多結晶酸化錫膜上に実施例と同一方法によりアモ
ルファスシリコン太陽電池を作成し、エネルギー変換効
率を測定した結果を第７表に示した。Table 1 As a comparative example, a polycrystalline tin oxide film with a film thickness of 0.31 μm was formed on soda lime glass with a silicon oxide coating by the same method as in the example, and the sheet resistance was measured.
As shown in the table, an amorphous silicon solar cell was prepared on the polycrystalline tin oxide film formed on this glass by the same method as in the example, and the results of measuring the energy conversion efficiency were reported in the seventh section. Shown in the table.
本発明によれば実施例からも明らかなとおり、エネルギ
ー変換効率の向上に寄与する太陽電池透明導電膜を得る
ことができる。According to the present invention, as is clear from the Examples, it is possible to obtain a solar cell transparent conductive film that contributes to improving energy conversion efficiency.
また本発明は、太陽電池以外の光電素子用の透明導電膜
として利用できることは明らかである。Furthermore, it is clear that the present invention can be used as a transparent conductive film for photoelectric devices other than solar cells.
Claims (2)
質酸化錫を主成分とする透明導電膜からなる二層構造を
有する透明導電膜(1) A transparent conductive film with a two-layer structure consisting of a transparent conductive film whose main component is polycrystalline tin oxide and a transparent conductive film whose main component is amorphous tin oxide.
する透明導電膜上に非晶質酸化錫を主成分とする透明導
電膜を形成した特許請求の範囲第１項に記載の透明導電
膜(2) A transparent conductive film mainly composed of amorphous tin oxide is formed on a transparent conductive film mainly composed of polycrystalline tin oxide provided on a transparent substrate. transparent conductive film
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61056628A JPH0614555B2 (en) | 1986-03-14 | 1986-03-14 | Transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61056628A JPH0614555B2 (en) | 1986-03-14 | 1986-03-14 | Transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62213281A true JPS62213281A (en) | 1987-09-19 |
| JPH0614555B2 JPH0614555B2 (en) | 1994-02-23 |
Family
ID=13032566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61056628A Expired - Lifetime JPH0614555B2 (en) | 1986-03-14 | 1986-03-14 | Transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0614555B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03125480A (en) * | 1989-10-11 | 1991-05-28 | Hitachi Ltd | Solar cell |
| EP0461908A2 (en) * | 1990-06-14 | 1991-12-18 | Fujitsu Limited | Process for preparing a transparent electrode and transparent electrode prepared by it |
| EP1160877A2 (en) * | 2000-05-30 | 2001-12-05 | Sanyo Electric Co., Ltd. | Photovoltaic element and method of manufacturing the same |
| US7585567B2 (en) | 2003-06-17 | 2009-09-08 | Nippon Sheet Glass Company, Limited | Transparent conductive substrate, method of manufacturing the same, and photoelectric conversion element |
| EP1351317A3 (en) * | 2002-03-19 | 2010-12-15 | Sanyo Electric Co., Ltd. | Photovoltaic element and manufacturing method of the photovoltaic element |
| WO2013111498A1 (en) * | 2012-01-25 | 2013-08-01 | 京セラ株式会社 | Photoelectric conversion apparatus |
| JP2014229633A (en) * | 2013-05-17 | 2014-12-08 | 株式会社カネカ | Solar cell and manufacturing method therefor, and solar cell module |
-
1986
- 1986-03-14 JP JP61056628A patent/JPH0614555B2/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03125480A (en) * | 1989-10-11 | 1991-05-28 | Hitachi Ltd | Solar cell |
| EP0461908A2 (en) * | 1990-06-14 | 1991-12-18 | Fujitsu Limited | Process for preparing a transparent electrode and transparent electrode prepared by it |
| EP1160877A2 (en) * | 2000-05-30 | 2001-12-05 | Sanyo Electric Co., Ltd. | Photovoltaic element and method of manufacturing the same |
| EP1160877A3 (en) * | 2000-05-30 | 2006-05-24 | Sanyo Electric Co., Ltd. | Photovoltaic element and method of manufacturing the same |
| EP1351317A3 (en) * | 2002-03-19 | 2010-12-15 | Sanyo Electric Co., Ltd. | Photovoltaic element and manufacturing method of the photovoltaic element |
| US7585567B2 (en) | 2003-06-17 | 2009-09-08 | Nippon Sheet Glass Company, Limited | Transparent conductive substrate, method of manufacturing the same, and photoelectric conversion element |
| WO2013111498A1 (en) * | 2012-01-25 | 2013-08-01 | 京セラ株式会社 | Photoelectric conversion apparatus |
| JPWO2013111498A1 (en) * | 2012-01-25 | 2015-05-11 | 京セラ株式会社 | Photoelectric conversion device |
| JP2014229633A (en) * | 2013-05-17 | 2014-12-08 | 株式会社カネカ | Solar cell and manufacturing method therefor, and solar cell module |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0614555B2 (en) | 1994-02-23 |
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