JPS62216108A - Transparent conductive film - Google Patents
Transparent conductive filmInfo
- Publication number
- JPS62216108A JPS62216108A JP61059051A JP5905186A JPS62216108A JP S62216108 A JPS62216108 A JP S62216108A JP 61059051 A JP61059051 A JP 61059051A JP 5905186 A JP5905186 A JP 5905186A JP S62216108 A JPS62216108 A JP S62216108A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- tin oxide
- fluorine
- containing tin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 29
- 229910001887 tin oxide Inorganic materials 0.000 claims description 29
- 229910052731 fluorine Inorganic materials 0.000 claims description 20
- 239000011737 fluorine Substances 0.000 claims description 20
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052787 antimony Inorganic materials 0.000 claims description 15
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 150000003606 tin compounds Chemical class 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000005361 soda-lime glass Substances 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 150000002221 fluorine Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- NPNPZTNLOVBDOC-UHFFFAOYSA-N 1,1-difluoroethane Chemical compound CC(F)F NPNPZTNLOVBDOC-UHFFFAOYSA-N 0.000 description 1
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- VOPWNXZWBYDODV-UHFFFAOYSA-N Chlorodifluoromethane Chemical compound FC(F)Cl VOPWNXZWBYDODV-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000001462 antimony Chemical class 0.000 description 1
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Non-Insulated Conductors (AREA)
- Photovoltaic Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は酸化錫を主成分とする二層構造をもった光電素
子用透明導電膜特に太＠電池用透明導電膜に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a transparent conductive film for photoelectric devices having a two-layer structure containing tin oxide as a main component, and particularly to a transparent conductive film for thick batteries.
近年、透明導電基板に非晶質シリコン（ａ−Ｓｉ）を用
いた光電変換素子を形成し、次いでＡｊ？等の電極を形
成した低コストの太陽電池が知られている。In recent years, photoelectric conversion elements using amorphous silicon (a-Si) have been formed on transparent conductive substrates, and then Aj? Low-cost solar cells with electrodes such as these are known.
かかるａ−３ｉ太陽電池は光電変換効率が他の結晶半導
体を用いた太陽電池に比べ低いことから、それを大にす
るため種々の対策が施されている。Since the photoelectric conversion efficiency of such a-3i solar cells is lower than that of solar cells using other crystalline semiconductors, various measures have been taken to increase the photoelectric conversion efficiency.
そのひとつとして、低抵抗かつ先高透過性を有する。含
フツ素酸化錫膜を透明導電膜に用いることがあげられる
。含フッ素酊化錫膜以外の酸化錫を主成分とする透明導
電膜としては、含アンチモン醗化錫膜が知られている。One of its features is low resistance and high permeability. One example of this is to use a fluorine-containing tin oxide film as a transparent conductive film. As a transparent conductive film containing tin oxide as a main component other than the fluorine-containing tin oxide film, an antimony-containing tin film is known.
しかしながら、含アンチモン酸化錫膜は、含フツ素酸化
錫膜に比べ抵抗が高く、非晶質シリコンを用いた光電変
換素子用の透明導電膜としてはあまり利用されていなか
った。However, antimony-containing tin oxide films have higher resistance than fluorine-containing tin oxide films, and have not been widely used as transparent conductive films for photoelectric conversion elements using amorphous silicon.
本発明は前記問題点を解決するためになされたものであ
って、光電素子の光電変換効率を高めるのに好適な光電
素子用透明導電膜を提供するものである。The present invention has been made to solve the above problems, and provides a transparent conductive film for photoelectric devices suitable for increasing the photoelectric conversion efficiency of photoelectric devices.
すなわち、本発明は高温に加熱した透明基板に錫化合物
及びフッ素を含む化合物を接触させ熱分解酸化反応によ
り、含フツ素酸化錫膜な堆積させ、さらにこの含７ノ素
酸化錫膜を堆積した透明基板を高温に加熱し、錫化合物
及びアンチモンを含む化合物を接触させ熱分解酸化反応
により含フツ素酸化錫膜上に含アンチモン酸化錫膜を堆
積させた二層構造を有する透明導電膜である。That is, the present invention deposits a fluorine-containing tin oxide film by bringing a tin compound and a fluorine-containing compound into contact with a transparent substrate heated to a high temperature through a thermal decomposition oxidation reaction, and further deposits this hepta-containing tin oxide film. A transparent conductive film having a two-layer structure in which an antimony-containing tin oxide film is deposited on a fluorine-containing tin oxide film by heating a transparent substrate to a high temperature, bringing a tin compound and an antimony-containing compound into contact, and depositing an antimony-containing tin oxide film through a thermal decomposition oxidation reaction. .
本発明に用いることのできる錫化合物は、Ｃ４Ｈｇ５ｎ
Ｃ１３，５ｎＣ１４＋ （ＣＨ３）２５ｎＣ１２＋ （
ＣｎＨ２ｎ＋１）４Ｓｎ（但しｎ −／−４’ ） ｒ
（ＣＨ３）２５ｎＨ２１ＣＣｊ４Ｈ９）３ｓｎＨ及び
（Ｃ４Ｈｃｒ）２Ｓｎ（０００ＣＨ３ｈ等であり、フッ
素ヲ含ム化合物としては、ＣＨ３ＣＨＦ２ 、ＣＨ３Ｃ
Ｏ１！Ｆ２ 、ＣＨＣｌＦ２ 。The tin compound that can be used in the present invention is C4Hg5n
C13,5nC14+ (CH3)25nC12+ (
CnH2n+1)4Sn (however, n -/-4') r
(CH3)25nH21CCj4H9)3snH and (C4Hcr)2Sn(000CH3h, etc., and examples of fluorine-containing compounds include CH3CHF2, CH3C
O1! F2, CHClF2.
ＣＨＦ３ 、ＣＦ２０１２，０Ｆ３０１．ＣＦ３Ｂｒ
等を用いることができ、アンチモンを含む化合物として
は５ｂＣ１５゜５ｂＯ１３等を用いることができる。CHF3, CF2012, 0F301. CF3Br
5bC15°5bO13 and the like can be used as the antimony-containing compound.
本発明において、これらの錫化合物とフッ素を含む化合
物又はアンチモンを含む化合物（以下、この２つをドー
パントと総称する。）を加熱した透明基板に接触させて
熱分解酸化反応をさせるには錫化合物蒸気と、酸化性ガ
ス及びドーパントを高温の透明基板に接触させる気相化
学反応法（ＣＶＤ法）か錫化合物の溶液をスプレーで高
温の透明基板に吹き付けるスプレー法等により行うこと
ができる。中でもｔＩｏｏ℃〜６ｏｏ″Ｃに加熱された
透明基板に錫化合物の蒸気及びドーパントをさせて含フ
ツ素酸化錫膜と含アンチモン酸化錫膜の二層構造を有す
る透明導ｉｌ！膜を付着させるＣＶＤ法が好んで用いら
れる。In the present invention, in order to cause a thermal decomposition oxidation reaction by bringing these tin compounds and a compound containing fluorine or a compound containing antimony (hereinafter these two are collectively referred to as dopants) into contact with a heated transparent substrate, the tin compound is This can be carried out by a vapor phase chemical reaction method (CVD method) in which steam, an oxidizing gas, and a dopant are brought into contact with a high-temperature transparent substrate, or by a spray method in which a solution of a tin compound is sprayed onto a high-temperature transparent substrate. Among them, CVD is a method in which a transparent conductive film having a two-layer structure of a fluorine-containing tin oxide film and an antimony-containing tin oxide film is attached by applying a vapor of a tin compound and a dopant to a transparent substrate heated to tIoo°C to 6oo″C. Law is preferred.
透明導電膜を含フツ素酸化銅膜層を有する二層構造とし
たことにより、透明導電膜の抵抗を低くすることができ
、かつ光電変換素子のｐ型半導体層と接触する透明導電
膜を含フツ素酸化錫から含アンチモン酸化錫に変えたこ
とによ０透明導電膜と光電変換素子との接合性が改良さ
れ光電素子の変換効率を高めることができる。By forming the transparent conductive film into a two-layer structure having a fluorine-containing copper oxide film layer, the resistance of the transparent conductive film can be lowered, and the transparent conductive film can be made to have a two-layer structure having a fluorine-containing copper oxide film layer. By changing from fluorine-containing tin oxide to antimony-containing tin oxide, the bondability between the transparent conductive film and the photoelectric conversion element is improved, and the conversion efficiency of the photoelectric element can be increased.
実施例／
大きさが２ ！； （”）Ｘｊ Ｏ（ｍｓ）、厚味へ／
（Ｉｆｆ）の酸化珪素被膜付ソーダライムガラスを十分
に洗浄、乾燥しガラス基板とした。このガラス基板上に
以下のようにして透明導電膜を付着した。Example/ Size is 2! ; (”)Xj O(ms), to thick taste/
The silicon oxide coated soda lime glass (Iff) was thoroughly washed and dried to prepare a glass substrate. A transparent conductive film was attached onto this glass substrate in the following manner.
モツプチル錫トリクロライドの蒸気、水蒸気、酸素ガス
／、／−ジフルオロエタンガスおよび窒素ガスの調整さ
れた混合気体を用いＣ１ＶＤ法によりｊりＯ″Ｃに加熱
されたガラス基板上に含フツ素酸化錫膜を形成した。A fluorine-containing tin oxide film is formed on a glass substrate heated to O''C by the C1VD method using a controlled mixture of motuputiltin trichloride vapor, water vapor, oxygen gas/,/-difluoroethane gas, and nitrogen gas. was formed.
得られた含７ツ素酸化錫膜の膜厚は０．３３μｍであっ
た。この含フツ素酸化錫膜を堆積させたガラス基板をタ
タＱ℃に加熱し、四塩化間の蒸気、酸素ガス、メチルア
ルコール、五塩化アンチモンおよび窒素ガスの調整され
た混合気体を用いＣＶＤ法により含フツ素酸化錫膜上に
含アンチモン酸化錫膜を形成した。得られた含アンチモ
ン酸化錫膜の膜厚は０．０７μｍであった。このｏ、１
１μｍの合計膜厚を有する二層膜の面積抵抗は第１表に
示した通り／ １．０Ω／口であった。The thickness of the obtained 7-containing tin oxide film was 0.33 μm. The glass substrate on which this fluorine-containing tin oxide film was deposited was heated to Tata Q°C, and then a CVD method was performed using a controlled gas mixture of tetrachloride vapor, oxygen gas, methyl alcohol, antimony pentachloride, and nitrogen gas. An antimony-containing tin oxide film was formed on a fluorine-containing tin oxide film. The thickness of the obtained antimony-containing tin oxide film was 0.07 μm. This o, 1
The sheet resistance of the two-layer film with a total film thickness of 1 μm was 1.0 Ω/hole as shown in Table 1.
これを用いて、アモルファスシリコン太陽電池を以下の
手順で作成した。Using this, an amorphous silicon solar cell was created according to the following procedure.
モノシラン（ＳｉＨ４）ガスを主成分とする原料ガスを
用いて／７０Ｐ＆程度の圧力下で容量結合型高周波グロ
ー放電装置により、
（１）ｐ型半導体ＦＩｓ（ホウ素ドープのａ−８ｉＣ’
Ｈ＋約０．０／Ｓμｍ厚）
（２）真性半導体層（ａ−８ｌ：Ｈ＋約ｏ、ｓμｍ厚）
（３１ｎ型半導体層（リンドープのマイクロクリスタリ
ンＳｉ（μｃ−Ｓｉ） ：Ｈ，約０．０！；Ｏｐｍ厚）
をそれぞれ順番に堆積させ、最後にＡＩ電極（約０．７
μｍ厚）を真空中（約／ ０−４Ｐａ ）で蒸着法によ
り作成した。(1) p-type semiconductor FIs (boron-doped a-8iC'
H + approx. 0.0/S μm thickness) (2) Intrinsic semiconductor layer (a-8l: H + approx. o, s μm thickness)
(31n-type semiconductor layer (phosphorus-doped microcrystalline Si (μc-Si): H, about 0.0!; Opm thickness)
were deposited in order, and finally an AI electrode (approximately 0.7
[mu]m thick) in vacuum (approximately /0-4 Pa) by vapor deposition.
上記ＡＡ！１に極を作成する際基板上に直径２朋の穴が
あいたマスクをのせておき、直径ｊ ＋ａｓの太陽電池
を／６ケ作成した。AA above! When creating the poles in Example 1, a mask with a hole of 2 mm in diameter was placed on the substrate, and /6 solar cells each having a diameter of j + as were created.
得られた太陽電池にＡＭ／の／ ００ ｍＷ／ｃｄの光
を照射し、エネルギー変換効率を測定した。得られた測
定結果を第１表に示す。The obtained solar cell was irradiated with light of AM/00 mW/cd, and the energy conversion efficiency was measured. The measurement results obtained are shown in Table 1.
なお、比較例／として、実施例１と同一方法により、酸
化珪素被膜付ソーダライムガラス上に、膜厚がｏ、ｐμ
ｍの含フツ素酸化錫膜を形成し、面積抵抗を測定したと
ころ第１表に示す如＜１０．０Ω／口第 ７ 表
であり、この含フツ素酸化錫膜上に実施例１と同一方法
により、アモルファスシリコン太陽電池を作成し、エネ
ルギー変換効率を測定した結果を第１表に示した。As a comparative example, film thicknesses of o and pμ were prepared on soda lime glass with a silicon oxide film by the same method as in Example 1.
When a fluorine-containing tin oxide film of m was formed and the sheet resistance was measured, it was <10.0Ω/mouth as shown in Table 1. An amorphous silicon solar cell was prepared using the method, and the energy conversion efficiency was measured. The results are shown in Table 1.
実施例コ
大きさが２３（ｆｌ）×３０（ｆｉｌ）、厚味へ／（ａ
ｌｌ）の酸化珪素被膜付ソーダライムガラスを十分に洗
浄、乾燥し、ガラス基板とした。このガラス基板上に実
施例１と同じ方法で透明導電膜を付着した。Example size: 23 (fl) x 30 (fil), thick/(a
The silicon oxide coated soda lime glass of ll) was thoroughly washed and dried to obtain a glass substrate. A transparent conductive film was deposited on this glass substrate in the same manner as in Example 1.
透明導電膜はガラス基板上に付着した００−２μｍ股厚
０含フツ素酸化錫膜上に０．２！ｉμｍの含アンチモン
酸化錫膜を堆積させた二層膜で面積抵抗が第２表に示し
た通り／ＬｊΩ／口であった。この含アンチモン酸化錫
膜上にアモルファスシリコン太陽電池を実施例１と同様
の手順で作成し、得られた明導電膜として利用できるこ
とは明らかである。A transparent conductive film is formed on a fluorine-containing tin oxide film with a thickness of 0.2 μm and a thickness of 0.2 μm attached to a glass substrate. A two-layer film in which an antimony-containing tin oxide film of iμm was deposited had an area resistance of /LjΩ/mouth as shown in Table 2. It is clear that an amorphous silicon solar cell can be produced on this antimony-containing tin oxide film in the same manner as in Example 1 and used as the resulting bright conductive film.
太陽電池にＡＭ １００ｍＷ／にｄの光を照射し、エネ
ルギー変換効率を測定した。The solar cell was irradiated with AM 100 mW/d light and the energy conversion efficiency was measured.
第２表に得られた測定結果を示す。Table 2 shows the measurement results obtained.
第 ２ 表
次に比較例−として、実施例−と同一方法により、ガラ
ス基板上に膜厚が０．’１７μｍの含フツ素酸化銅の単
層膜を形成し、面積抵抗を測定したところ第２表に示す
如＜ｔ、９Ω／口であり、この単層膜上に実施例−と同
一方法により、アモルファスシリコン太陽電池を作成し
、エネルギー効率を測定した結果を第２表に示した。Table 2 Next, as a comparative example, a film with a thickness of 0.5 mm was formed on a glass substrate using the same method as in the example. A single layer film of fluorine-containing copper oxide with a thickness of 17 μm was formed, and the sheet resistance was measured, as shown in Table 2. , amorphous silicon solar cells were prepared and the energy efficiency was measured, and the results are shown in Table 2.
本発明によれば実施例からも明らかなとおり、エネルギ
ー変換効率の向上に寄与する太陽電池透明導電膜を得る
ことができる。According to the present invention, as is clear from the Examples, it is possible to obtain a solar cell transparent conductive film that contributes to improving energy conversion efficiency.
Claims (2)
、該透明導電膜に付着したアンチモンを含む酸化錫を主
成分とする透明導電膜とからなる二層構造を有する透明
導電膜(1) A transparent conductive film having a two-layer structure consisting of a transparent conductive film whose main component is tin oxide containing fluorine, and a transparent conductive film whose main component is tin oxide containing antimony attached to the transparent conductive film.
成分とする透明導電膜上にアンチモンを含む酸化錫を主
成分とする透明導電膜を形成した特許請求の範囲第１項
に記載の透明導電膜(2) Claim 1, in which a transparent conductive film mainly composed of tin oxide containing antimony is formed on a transparent conductive film mainly composed of tin oxide containing fluorine attached to a transparent substrate. transparent conductive film
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61059051A JPS62216108A (en) | 1986-03-17 | 1986-03-17 | Transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61059051A JPS62216108A (en) | 1986-03-17 | 1986-03-17 | Transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62216108A true JPS62216108A (en) | 1987-09-22 |
| JPH0353723B2 JPH0353723B2 (en) | 1991-08-16 |
Family
ID=13102136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61059051A Granted JPS62216108A (en) | 1986-03-17 | 1986-03-17 | Transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62216108A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02210715A (en) * | 1989-02-08 | 1990-08-22 | Nippon Sheet Glass Co Ltd | Transparent conductive base member with two-layer structure |
-
1986
- 1986-03-17 JP JP61059051A patent/JPS62216108A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02210715A (en) * | 1989-02-08 | 1990-08-22 | Nippon Sheet Glass Co Ltd | Transparent conductive base member with two-layer structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0353723B2 (en) | 1991-08-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |