JPS5649521A - Formation of thin film - Google Patents

Formation of thin film

Info

Publication number
JPS5649521A
JPS5649521A JP12484779A JP12484779A JPS5649521A JP S5649521 A JPS5649521 A JP S5649521A JP 12484779 A JP12484779 A JP 12484779A JP 12484779 A JP12484779 A JP 12484779A JP S5649521 A JPS5649521 A JP S5649521A
Authority
JP
Japan
Prior art keywords
electrode
substrate
thin film
plus
minus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12484779A
Other languages
Japanese (ja)
Inventor
Yasutoshi Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP12484779A priority Critical patent/JPS5649521A/en
Publication of JPS5649521A publication Critical patent/JPS5649521A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To reduce a quantity of gas consumption and to easily obtain a thin film of a high specific resistance by a method wherein a thin film is formed on a substrate in such way that a minus side electrode and a plus side electrode are provided leaving a prescribed space from the substrate side and a DC glow discharge is used. CONSTITUTION:On the bottom of a vacuum case 1 having a vacuum exhaust system 9, a plus-side electrode 3 with a CH4 leading-in opening 6 at the central part is provided and a mesh form minus-side electrode 2 is provided on said electrode 3. A substrate holder 4 with a substrate 5 such as glass or the like is adhered on the undersurface is provided on the ceiling of the above electrode 2, a minus-side terminal coming from a DC power source 8 located on the outside is connected to the holder 4 and a plus-side terminal is connected to the electrode 3 respectively. With the above constitution, CH4 gas is filled in the case 1 using a valve 7, the inside of the case 1 is maintained at about 0.1Torr, flow discharge is generated by applying a voltage of approximately 950V and a high resistance carbon film is precipitated on the surface of the substrate 5.
JP12484779A 1979-09-28 1979-09-28 Formation of thin film Pending JPS5649521A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12484779A JPS5649521A (en) 1979-09-28 1979-09-28 Formation of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12484779A JPS5649521A (en) 1979-09-28 1979-09-28 Formation of thin film

Publications (1)

Publication Number Publication Date
JPS5649521A true JPS5649521A (en) 1981-05-06

Family

ID=14895562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12484779A Pending JPS5649521A (en) 1979-09-28 1979-09-28 Formation of thin film

Country Status (1)

Country Link
JP (1) JPS5649521A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147554A (en) * 1982-02-25 1983-09-02 Sumitomo Electric Ind Ltd Manufacture of coated sintered hard alloy tool
JPS6016419A (en) * 1983-07-08 1985-01-28 Nippon Denshi Kogyo Kk Plasma cvd processing apparatus
EP0150878A2 (en) * 1984-01-28 1985-08-07 Philips Patentverwaltung GmbH Process for the manufacture of a thin film strain gage system
US4673588A (en) * 1984-01-28 1987-06-16 U.S. Philips Corporation Device for coating a substrate by means of plasma-CVD or cathode sputtering
JPS62224922A (en) * 1986-03-27 1987-10-02 Mitsui Toatsu Chem Inc Manufacture of semiconductor and equipment therefor
US4783369A (en) * 1985-03-23 1988-11-08 Canon Kabushiki Kaisha Heat-generating resistor and heat-generating resistance element using same
US4804974A (en) * 1985-03-23 1989-02-14 Canon Kabushiki Kaisha Thermal recording head
US4845513A (en) * 1985-03-23 1989-07-04 Canon Kabushiki Kaisha Thermal recording head
US4847639A (en) * 1985-06-10 1989-07-11 Canon Kabushiki Kaisha Liquid jet recording head and recording system incorporating the same
US4870388A (en) * 1985-03-22 1989-09-26 Canon Kabushiki Kaisha Heat-generating resistor and heat-generating resistance element using same
US4983993A (en) * 1985-03-25 1991-01-08 Canon Kabushiki Kaisha Thermal recording head
JP2010015118A (en) * 2008-07-04 2010-01-21 Yoshiko Kato Eyeglasses nose pad

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147554A (en) * 1982-02-25 1983-09-02 Sumitomo Electric Ind Ltd Manufacture of coated sintered hard alloy tool
JPS6016419A (en) * 1983-07-08 1985-01-28 Nippon Denshi Kogyo Kk Plasma cvd processing apparatus
EP0301604A2 (en) * 1984-01-28 1989-02-01 Philips Patentverwaltung GmbH Apparatus for coating a substrate by plasma-chemical vapour deposition or cathodic sputtering, and process using the apparatus
EP0150878A2 (en) * 1984-01-28 1985-08-07 Philips Patentverwaltung GmbH Process for the manufacture of a thin film strain gage system
US4673588A (en) * 1984-01-28 1987-06-16 U.S. Philips Corporation Device for coating a substrate by means of plasma-CVD or cathode sputtering
US4715319A (en) * 1984-01-28 1987-12-29 U.S. Philips Corporation Device for coating a substrate by means of plasma-CVD or cathode sputtering
US4870388A (en) * 1985-03-22 1989-09-26 Canon Kabushiki Kaisha Heat-generating resistor and heat-generating resistance element using same
US4783369A (en) * 1985-03-23 1988-11-08 Canon Kabushiki Kaisha Heat-generating resistor and heat-generating resistance element using same
US4804974A (en) * 1985-03-23 1989-02-14 Canon Kabushiki Kaisha Thermal recording head
US4845513A (en) * 1985-03-23 1989-07-04 Canon Kabushiki Kaisha Thermal recording head
US4983993A (en) * 1985-03-25 1991-01-08 Canon Kabushiki Kaisha Thermal recording head
US4847639A (en) * 1985-06-10 1989-07-11 Canon Kabushiki Kaisha Liquid jet recording head and recording system incorporating the same
JPS62224922A (en) * 1986-03-27 1987-10-02 Mitsui Toatsu Chem Inc Manufacture of semiconductor and equipment therefor
JP2010015118A (en) * 2008-07-04 2010-01-21 Yoshiko Kato Eyeglasses nose pad

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