JPS59194480A - Manufacture of solar battery - Google Patents

Manufacture of solar battery

Info

Publication number
JPS59194480A
JPS59194480A JP58068703A JP6870383A JPS59194480A JP S59194480 A JPS59194480 A JP S59194480A JP 58068703 A JP58068703 A JP 58068703A JP 6870383 A JP6870383 A JP 6870383A JP S59194480 A JPS59194480 A JP S59194480A
Authority
JP
Japan
Prior art keywords
mask
substrate
solar cell
amorphous film
magnet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58068703A
Other languages
Japanese (ja)
Other versions
JPS6320027B2 (en
Inventor
Akira Hanabusa
花房 彰
Mikihiro Azumaguchi
東口 実喜博
Michio Osawa
道雄 大沢
Zenichiro Ito
伊藤 善一郎
Koshiro Mori
森 幸四郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58068703A priority Critical patent/JPS59194480A/en
Publication of JPS59194480A publication Critical patent/JPS59194480A/en
Publication of JPS6320027B2 publication Critical patent/JPS6320027B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To facilitate positioning work by positioning a magnetic material as a mask material, disposing a magnet at the opposite mask material side to improve the bondability between a substrate and the mask material, and then forming an amorphous film. CONSTITUTION:A back plate 22 in which a plurality of magnets 21 are buried at the predetermined positions is placed on the back surface 27 of a transparent substrate 24 in which the substrate 24 attached with a transparent electrode 23 of the prescribed pattern and a mask 25 of magnetic material punched in the prescribed pattern are superposed, and the mask 25 is closely contacted with the substrate 24 via the magnets 21. Then, the mask 25, the substrate 24 and the back plate 22 thus poitioned merely are set by a holder 26 formed of a magnetic material to simply secure them to the holder in the positioned state.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、非晶質太陽電池の製造法に関するものである
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing an amorphous solar cell.

太陽電池の応用分野としては、一部の特殊用途を除いて
、民生用と電力用といつ、大きく分けて二つの分野があ
る。このうち民生用の分野では、最近の表示素子やLS
I等の低消費電力化が一段と進み、螢光灯等の屋内光の
み全光源とする太陽電池全電源とした成子機器が続々と
登場し、安価で高性能の太陽電池に対する期待が高まっ
てきている。
With the exception of some special applications, the fields of application of solar cells can be broadly divided into two: consumer use and power use. Among these, in the consumer field, recent display elements and LS
As the power consumption of I and other devices continues to decrease, and more and more Nariko devices are being introduced that are powered entirely by solar cells, with indoor light such as fluorescent lamps being the only light source, expectations for inexpensive, high-performance solar cells are increasing. There is.

また、電力用の分野でも、大規模な太陽光発電ノステム
が建設運転さn、やはり安価で高性能の太陽電池に対す
る期待が高1っている。
Furthermore, in the field of electric power, large-scale solar power generation systems are under construction and operation, and expectations are high for inexpensive, high-performance solar cells.

従来例の構成とその問題点 従来より、非晶質太陽電池の製造過程では、第1図に示
すように、透明電極2全所定形状(にパターン付けした
透明基板1と、そnK適応するパターンで穴を開けたマ
スク3とを重ね合せ、第2図のように基板1の裏面13
の上に載置する適当な裏板4と一緒にホルダ6ヘセノト
し、こnら全体を固定用ピン6で固定してプラズマC,
VD装置などの反応炉内に設置し、雰囲気を真空に保ち
81 %等の原料ガス全適量流し、前記基板1の温度を
200〜30o℃に保ち、前記ホルダ5と、もう一方の
電極7との間にプラズマを発生させ、前記基板1の主表
面8に、前記マスク3の穴の部分だけ、第3図に示すよ
うに非晶質膜9を堆積させていた。
Conventional Structure and Problems Conventionally, in the manufacturing process of amorphous solar cells, as shown in FIG. 2. Overlap the mask 3 with holes made in the
Place the holder 6 together with a suitable back plate 4 to be placed on top, fix the whole thing with the fixing pins 6, and attach the plasma C,
It is installed in a reactor such as a VD device, the atmosphere is kept in a vacuum, the entire appropriate amount of raw material gas such as 81% is passed through, the temperature of the substrate 1 is maintained at 200 to 30 degrees Celsius, and the holder 5 and the other electrode 7 are connected to each other. During this time, plasma was generated to deposit an amorphous film 9 on the main surface 8 of the substrate 1 only in the holes of the mask 3, as shown in FIG.

そnから後は蒸着等により裏面電極10を第4図に示す
ように形成し、各素子を完成すると同時に、前記透明電
極2の先端の鉤形部2aと前記電極10の鉤形部10 
a f重畳させることにより、各素子間の直列接続をも
行なっていた。しかし第5図に示すように、非晶質膜の
にじみ出し11と干渉縞12とが発生し易かった。この
うち、非晶質膜のにじみ出し11が前述のように前記透
明電極2の先端の鉤形部2aの裏面電極1oの鉤形部1
0aと重なる部分に寸で生じた場合には、非晶質膜のに
じみ出し11部分の抵抗が非常に大きいため、直列接続
ができなくなり、特性不良となる。又他の部分ににじみ
出し11が生じたときでも、にじみ部分の膜質異常によ
j)%性不良になったり、外観不良となる場合がある。
After that, the back electrode 10 is formed by vapor deposition or the like as shown in FIG.
By superimposing a f, series connection between each element was also performed. However, as shown in FIG. 5, bleeding 11 of the amorphous film and interference fringes 12 were likely to occur. Of these, the oozing 11 of the amorphous film is caused by the hook-shaped portion 1 of the back electrode 1o of the hook-shaped portion 2a at the tip of the transparent electrode 2, as described above.
If it occurs in a portion overlapping with 0a, the resistance of the oozing portion 11 of the amorphous film is very large, making series connection impossible and resulting in poor characteristics. Furthermore, even when oozing 11 occurs in other areas, abnormality in film quality at the oozing area may result in poor quality or poor appearance.

ここで、前述の非晶質膜のにじみ出し11と干渉縞12
とが発生する原因としては、前記マスク3の材質がステ
ンレス鋼等の場合、その厚みがおよそ0.5叫以下では
、200〜300’C程度の加熱での曲がりが激しく、
こ扛かために前記基板1の主表面8と前記マスク3との
密着が悪く4って前記非晶質膜のにじみ出し11が生じ
やすい。また前記マスク3の厚みがO、sm+n以上で
は、前記基板1の主表面8と前記マスク3との間の段差
のために、その近傍のプラズマが乱さnて、非晶質膜の
干渉縞12が生じやすく、生じたものは外観的に目立ち
やすいものとなる。従って、にじみ出し及び干渉縞の双
方をなるべく少くするために通常は厚さ0.5閣程度の
前記マスク3を用いているが、前述のマスクの熱変形に
よる非晶質膜のにじみ出し及びマスク厚みのプラズマ放
電への影響による膜面の干渉縞を無くすことができない
ため、特性不良及び外観不良が常に存在して17′また
Here, the oozing 11 of the amorphous film and the interference fringes 12 mentioned above are shown.
The reason for this is that when the material of the mask 3 is stainless steel or the like, if the thickness is less than about 0.5 mm, it will bend severely when heated to about 200 to 300 degrees Celsius.
Due to this stiffness, the adhesion between the main surface 8 of the substrate 1 and the mask 3 is poor, and oozing 11 of the amorphous film is likely to occur. Further, when the thickness of the mask 3 is O,sm+n or more, the plasma in the vicinity is disturbed due to the step between the main surface 8 of the substrate 1 and the mask 3, and the interference fringes 12 of the amorphous film are This tends to occur, and when it occurs, it is easily noticeable in appearance. Therefore, in order to reduce both oozing and interference fringes as much as possible, the mask 3 having a thickness of about 0.5 mm is usually used. Since interference fringes on the film surface due to the effect of thickness on plasma discharge cannot be eliminated, poor characteristics and poor appearance always exist.

また、従来の方法では、前記基板1と前記マスク3とを
合わせるに際し位置ズレ防止のために、前記ホルダ5ヘ
セソトしてから固定用ピン6で固定しているが、これで
は作業性が悪いとともに、位置合わせ作業時にズレが生
じやすいと云う欠点があった。
Furthermore, in the conventional method, in order to prevent misalignment when aligning the substrate 1 and the mask 3, the substrate 1 and the mask 3 are inserted into the holder 5 and then fixed with fixing pins 6, but this method has poor workability and However, there is a drawback that misalignment is likely to occur during alignment work.

発明の目的 そこで本発明は、以上述べた従来例における欠点全改善
した、非晶質太陽電池の製造法を提供すること全目的と
するものである。
OBJECTS OF THE INVENTION Therefore, the entire object of the present invention is to provide a method for manufacturing an amorphous solar cell, which overcomes all the drawbacks of the conventional methods described above.

発明の構成 上記目的を達成するため、本発明は非晶質膜を選択的に
形成するために用いらnるマスクの材質に磁性#−を用
い、このマスクを磁石によって基板面に吸引密着させる
ことを特徴としたものである。
Structure of the Invention In order to achieve the above object, the present invention uses magnetic #- as the material of the mask used to selectively form an amorphous film, and the mask is attracted and brought into close contact with the substrate surface by a magnet. It is characterized by this.

実施例の説明 以下、本発明の実施例につき詳細に説明する。Description of examples Examples of the present invention will be described in detail below.

第6図に示すように、予め所定の位置に複数の磁石21
を埋め込んだ裏板22を所定のパターンの透明電極23
を付けた透明基板24と、所定の・くターン全抜いた磁
性体製(SUS430.コノく−ル等)のマスク25と
を重ねたものの基板24の裏面27上に置いて、マスク
25を前記磁石21で前記基板24に密着させる。ここ
で重要なのは、前述のように非晶質膜の干渉縞を全く無
くすために、前記マスク25の板厚全0 、3mm以下
にする必要があることである。しかし基板24が200
〜300’Cの温度に加熱さ扛るため、前記マスク25
だけでは熱膨張を起こし、その板厚が0.5m以下であ
ると、マスク25自身の強度のみでは、前述     
  ゛の如く熱膨張を吸収できずに、反ってしまい更に
はキーク一温度み゛30o℃未満の磁石では、磁力を失
なってしまう。このためキュリ一温度の高い磁石21に
よって、マスク25と基板24との密着性を良くするこ
とが重要である。従がって、ここで用いる磁石のキュリ
一温度は30o℃以上で、実験的にマスク25を基板2
4に密着させるには、3000ガウス以上の残留磁束密
度が必要である。
As shown in FIG. 6, a plurality of magnets 21 are placed at predetermined positions in advance.
A transparent electrode 23 of a predetermined pattern is attached to the back plate 22 embedded with
Place the transparent substrate 24 with the above-mentioned mask 24 on the back surface 27 of the substrate 24, which is made by overlapping a mask 25 made of a magnetic material (SUS430. It is brought into close contact with the substrate 24 using a magnet 21. What is important here is that the total thickness of the mask 25 must be 0.3 mm or less in order to completely eliminate the interference fringes of the amorphous film as described above. However, the board 24 is 200
The mask 25 is heated to a temperature of ~300'C.
If the thickness of the mask 25 is less than 0.5 m, the strength of the mask 25 alone will cause thermal expansion.
As shown in Figure 2, the magnet cannot absorb thermal expansion and warps, and furthermore, if the key temperature is less than 30°C, the magnet will lose its magnetic force. Therefore, it is important to improve the adhesion between the mask 25 and the substrate 24 by using the magnet 21 having a high Curie temperature. Therefore, the Curie temperature of the magnet used here is 30° C. or higher, and the mask 25 was experimentally connected to the substrate 2.
4, a residual magnetic flux density of 3000 Gauss or more is required.

次に、こうして位置合せを済ませたマスク25、基板2
4、及び裏板22を磁性体で作らnたホルダ26にセッ
トするだけで、位置合せした状態で簡単にホルダに固定
できる。
Next, the mask 25 and substrate 2 that have been aligned in this way are
4 and the back plate 22 in a holder 26 made of a magnetic material, they can be easily fixed to the holder in an aligned state.

発明の効果 このような本発明によれば、非晶質膜のにじみ出し及び
干渉縞の発生がなく、形状精度の高い太陽電池が非常に
簡単に、しかも安価に製造することができる。さらにそ
の製造工程において位置合せ後の複雑な固定のための作
業が無くなり、位置合わせした基板及びマスク全磁石に
よりホルダへ簡単に固定することができる。
Effects of the Invention According to the present invention, a solar cell with high shape accuracy can be manufactured very easily and at low cost without the oozing of the amorphous film or the generation of interference fringes. Further, in the manufacturing process, there is no need for complicated fixing work after alignment, and the aligned substrate and mask can be easily fixed to the holder using all the magnets.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の太陽電池の製造法における透明基板とマ
スクとの位置合せ全示す図、第2図は位置合わせした基
板とマスフケホルダにセットし反応炉内に位置させた図
、第3図はマスクの穴の部分に非晶質膜を堆積させた図
、第4図は第3図の非晶質膜上に裏面電極を形成した図
、第5図は非晶質膜のにじみ出しと干渉、鳴の発生を示
す図、第6図は本発明の実施例における磁石を埋め込ん
だ裏板を示す図、第7図は同裏板の磁石によりマスクを
基板に密着させてホルダに七ノドした図である。 1124 ・・透明基板、2.23・・・・・透明電極
、3.25・・・マスク、4,22・・・・・置板、5
,26・・・・・・ホルダ、21・・・・・・磁石。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 第2図 第3図
Figure 1 is a diagram showing the complete alignment of the transparent substrate and mask in the conventional solar cell manufacturing method, Figure 2 is a diagram showing the aligned substrate and mask holder set in a reactor, and Figure 3 is a diagram showing the alignment of the transparent substrate and mask in the conventional solar cell manufacturing method. Figure 4 shows the amorphous film deposited in the hole of the mask, Figure 4 shows the back electrode formed on the amorphous film in Figure 3, and Figure 5 shows the oozing and interference of the amorphous film. FIG. 6 is a diagram showing the back plate in which a magnet is embedded in an embodiment of the present invention. FIG. 7 is a diagram showing the back plate in which a magnet is embedded in the embodiment of the present invention. FIG. It is a diagram. 1124...Transparent substrate, 2.23...Transparent electrode, 3.25...Mask, 4,22...Placement plate, 5
, 26...Holder, 21...Magnet. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 3

Claims (3)

【特許請求の範囲】[Claims] (1)非晶質太陽電池の製造方法であって、端子部や直
並列結線部等を除いた基板の必要部分のみに。 非晶質膜を形成するためのマスク材として磁性材料を位
置させ、かつ前記基板とマスク材との密着性を良くする
ため基板の反マスク材側に磁石を配置した後、非晶質膜
を形成することを特徴とする太陽電池の製造法。
(1) A method for manufacturing an amorphous solar cell, in which only the necessary parts of the substrate excluding terminals, series-parallel connections, etc. A magnetic material is positioned as a mask material for forming an amorphous film, and a magnet is placed on the side of the substrate opposite to the mask material in order to improve the adhesion between the substrate and the mask material, and then the amorphous film is formed. A method for manufacturing a solar cell characterized by forming a solar cell.
(2)  マスク材の厚さが、0.3a以下である特許
請求の範囲第1項に記載の太陽電池の製造法。
(2) The method for manufacturing a solar cell according to claim 1, wherein the thickness of the mask material is 0.3a or less.
(3)磁石のキュリ一温度が300℃以上で、かつ残留
磁宋密度が3000ガウス以上である特許請求の範囲第
1項に記載の太陽電池の製造法。
(3) The method for manufacturing a solar cell according to claim 1, wherein the Curie temperature of the magnet is 300° C. or higher, and the residual magnetic density is 3000 Gauss or higher.
JP58068703A 1983-04-18 1983-04-18 Manufacture of solar battery Granted JPS59194480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58068703A JPS59194480A (en) 1983-04-18 1983-04-18 Manufacture of solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58068703A JPS59194480A (en) 1983-04-18 1983-04-18 Manufacture of solar battery

Publications (2)

Publication Number Publication Date
JPS59194480A true JPS59194480A (en) 1984-11-05
JPS6320027B2 JPS6320027B2 (en) 1988-04-26

Family

ID=13381391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58068703A Granted JPS59194480A (en) 1983-04-18 1983-04-18 Manufacture of solar battery

Country Status (1)

Country Link
JP (1) JPS59194480A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098552A (en) * 1983-11-01 1985-06-01 Hitachi Ltd Variable speed control device of vtr
JPS61116885A (en) * 1984-11-12 1986-06-04 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric conversion semiconductor device
JPH07202229A (en) * 1994-07-07 1995-08-04 Semiconductor Energy Lab Co Ltd Selective film-forming method
JPWO2004079442A1 (en) * 2003-03-06 2006-06-08 株式会社ブリヂストン Image display device manufacturing method and image display device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5018974A (en) * 1973-06-22 1975-02-27
JPS5680176A (en) * 1979-12-04 1981-07-01 Sanyo Electric Co Ltd Photoelectromotive force device
JPS58111380A (en) * 1981-12-24 1983-07-02 Seiko Epson Corp Manufacture of amorphous silicon solar cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5018974A (en) * 1973-06-22 1975-02-27
JPS5680176A (en) * 1979-12-04 1981-07-01 Sanyo Electric Co Ltd Photoelectromotive force device
JPS58111380A (en) * 1981-12-24 1983-07-02 Seiko Epson Corp Manufacture of amorphous silicon solar cell

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098552A (en) * 1983-11-01 1985-06-01 Hitachi Ltd Variable speed control device of vtr
JPS61116885A (en) * 1984-11-12 1986-06-04 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric conversion semiconductor device
JPH0554711B2 (en) * 1984-11-12 1993-08-13 Handotai Energy Kenkyusho
JPH07202229A (en) * 1994-07-07 1995-08-04 Semiconductor Energy Lab Co Ltd Selective film-forming method
JPWO2004079442A1 (en) * 2003-03-06 2006-06-08 株式会社ブリヂストン Image display device manufacturing method and image display device

Also Published As

Publication number Publication date
JPS6320027B2 (en) 1988-04-26

Similar Documents

Publication Publication Date Title
TW200930826A (en) System and method for dual-sided sputter etch of substrates
TW201132773A (en) Mask assembly
JPS59194480A (en) Manufacture of solar battery
WO2024087667A1 (en) Conductive wire membrane and photovoltaic cell assembly
CN102418074A (en) Methods of sputtering using a non-bonded semiconducting target
CN112968022B (en) LED display backboard and massive transfer method and repair method thereof
KR102146631B1 (en) Substrate Holding System with Magnetic force of Switching magnets applied
JP2008227209A (en) Method of manufacturing member for circuit board
CN209190092U (en) A kind of photovoltaic module stacking welding tooling
US8778718B2 (en) Method of manufacturing dye sensitized solar battery and solar battery assembling apparatus for the same
KR101816483B1 (en) Heating film and its making method
CN218059183U (en) Quartz wafer coating tool and coating device
CN110904491A (en) Coating jig frame of ultra-thin quartz wafer
WO2017219949A1 (en) Infinitely extending solar battery module based on magnetically extended circuit
CN212381493U (en) Reflow soldering jig based on FPC circuit board
JPH06188464A (en) Thin film thermoelectric element and manufacture thereof
JPS623682A (en) Positioning device for electrode plate array in ion chamber type x-ray detector
CN211713227U (en) Coating jig frame of ultra-thin quartz wafer
JPS6165783A (en) Flexible substrate support jig
JPH01235388A (en) Manufacture of thermoelement
JPH02112255A (en) Wafer loading mechanism
JPS6146017A (en) Thin film producing apparatus
JPS6185871A (en) Manufacture of transparent electrode
CN100446157C (en) Cathode plate of nanometer carbon tube field effect transmissive display device and production of display device
JPH02237080A (en) Thin film solar cell