JPS57159016A - Manufacture of amorphous silicon film - Google Patents

Manufacture of amorphous silicon film

Info

Publication number
JPS57159016A
JPS57159016A JP56044938A JP4493881A JPS57159016A JP S57159016 A JPS57159016 A JP S57159016A JP 56044938 A JP56044938 A JP 56044938A JP 4493881 A JP4493881 A JP 4493881A JP S57159016 A JPS57159016 A JP S57159016A
Authority
JP
Japan
Prior art keywords
plasma
nucleus
substrate
ion
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56044938A
Other languages
Japanese (ja)
Inventor
Hajime Ichiyanagi
Nobuhiko Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56044938A priority Critical patent/JPS57159016A/en
Publication of JPS57159016A publication Critical patent/JPS57159016A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To obtain an amorphous silicon (a-Si) electronic device having good characteristics by removing ion nucleus of various substance nucleus produced in plasma from the surface grown with a-Si. CONSTITUTION:The interior of a reaction container 1 is reduced in pressure and a substrate 8 is heated. When i-type a-Si doped without impurity is, for example, obtained from a gas supply port 5, gas such as monosilane is supplied, a glow discharge is produced by a coil 2 to decompose the material gas, and a-Si film is formed on the substrate 8. Since the characteristics of the a-Si film is deteriorated by the presence of the ion nucleus in the plasma at this time, a grid-shaped ion collecting electrode 7 is, for example, provided, to remove it, in parallel with the surface of the substrate 8. In this case, no voltage is applied to the grid electrode 7, but negative voltage is applied, and a method in which electrons are emitted into the plasma to neutralize the ion nucleus in the plasma may be employed.
JP56044938A 1981-03-26 1981-03-26 Manufacture of amorphous silicon film Pending JPS57159016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56044938A JPS57159016A (en) 1981-03-26 1981-03-26 Manufacture of amorphous silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56044938A JPS57159016A (en) 1981-03-26 1981-03-26 Manufacture of amorphous silicon film

Publications (1)

Publication Number Publication Date
JPS57159016A true JPS57159016A (en) 1982-10-01

Family

ID=12705417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56044938A Pending JPS57159016A (en) 1981-03-26 1981-03-26 Manufacture of amorphous silicon film

Country Status (1)

Country Link
JP (1) JPS57159016A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58193726A (en) * 1982-05-08 1983-11-11 Ushio Inc Vapor deposition method
JPS5972126A (en) * 1982-10-16 1984-04-24 Agency Of Ind Science & Technol Manufacture of semiconductor thin-film with pattern
JPS59127832A (en) * 1983-01-12 1984-07-23 Agency Of Ind Science & Technol Plasma cvd device
JPS59145778A (en) * 1983-02-09 1984-08-21 Ushio Inc Photochemical vapor deposition device
EP0131433A2 (en) * 1983-07-08 1985-01-16 Fujitsu Limited Plasma processing apparatus
JPS60257130A (en) * 1984-06-01 1985-12-18 Res Dev Corp Of Japan Formation of thin film using radical beam

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TOPICS IN APPL.PHYS=1979 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58193726A (en) * 1982-05-08 1983-11-11 Ushio Inc Vapor deposition method
JPS6150147B2 (en) * 1982-05-08 1986-11-01 Ushio Electric Inc
JPS5972126A (en) * 1982-10-16 1984-04-24 Agency Of Ind Science & Technol Manufacture of semiconductor thin-film with pattern
JPH0441489B2 (en) * 1982-10-16 1992-07-08 Kogyo Gijutsu Incho
JPS59127832A (en) * 1983-01-12 1984-07-23 Agency Of Ind Science & Technol Plasma cvd device
JPS59145778A (en) * 1983-02-09 1984-08-21 Ushio Inc Photochemical vapor deposition device
JPS6150152B2 (en) * 1983-02-09 1986-11-01 Ushio Electric Inc
EP0131433A2 (en) * 1983-07-08 1985-01-16 Fujitsu Limited Plasma processing apparatus
JPS60257130A (en) * 1984-06-01 1985-12-18 Res Dev Corp Of Japan Formation of thin film using radical beam
JPH0231491B2 (en) * 1984-06-01 1990-07-13 Shingijutsu Kaihatsu Jigyodan

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