JPS59145778A - Photochemical vapor deposition device - Google Patents

Abstract

PURPOSE:To enable input of large electric power and to prevent diffusion of plasma with simple constitution in a titled device of a built-in discharge type by providing plural pieces of cathodes in a circumferential shape on the side of an electric discharge space near the substrate and an anode at the center on the side furnace from the substrate. CONSTITUTION:A vessel 1 is of an approximately cylindrical shape and a photoreactive gas is supplied therein through holes 11 and is dischaged through a hole 12. A substrate 4 is supported in a support 13 contg. a heater in the top part and a reaction space 5 is formed under the same. The part beneath said space is an electric discharge space 3. A large anode 6 of a semispherical shape is disposed at the center on the base of the vessel 1 and many cathodes 7 are circumferentially disposed on the side wall of the vessel 1 corresponding to the boundary of the spaces 3, 5. When a voltage is impressed between the electrodes 6 and 7, plasma discharge is caused in a circular conical shape in a perpendicular direction and the substrate 4 is irradiated with the generated UV eight. For example, amorphous Si is thus deposited by evaporation on the substrate 4.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for vaporizing photochemical reaction products onto a substrate.

Recently, research has been conducted on a method of forming a deposited film of amorphous silicon used in photosensitive drums of electronic copying machines, solar SL ponds, and the like. 1, and on the other hand, each mσ', insulating film and FI
Ti! Vapor deposition methods are also used to form films1. Various vapor deposition methods have been proposed depending on the application, but among these, photochemical vapor deposition equipment that uses four photochemical reactions has a remarkable film formation speed. L1 has recently attracted particular attention because it has the advantage of being able to form a uniform coating over a wide area.

In the conventional chemical vapor deposition method using a photochemical reaction, a substrate is placed in a container that is highly transparent to ultraviolet light, a photoreaction gas is passed through the container, and the gas is caused to undergo a photochemical reaction using an ultraviolet ray (forced from outside the container). The reaction product is vapor-deposited on the substrate, and has the above-mentioned great advantages, but on the other hand,
It was found that the reaction product was also deposited on the inner wall of the container, causing a problem in that it significantly inhibited the transmission of ultraviolet rays.

Therefore, the reaction space, which is a path for the photoreactive gas and where the substrate is placed, and the discharge space, which is generated by ultraviolet total glasma discharge that causes a photochemical reaction in this photoreactive gas, are surrounded by the same container, and the plasma and substrate are placed in the same container. We are currently researching and developing a photochemical vapor deposition system with a built-in so-called "deactivation" method, which does not require a gold film on the partition wall.

Incidentally, the rate of formation of a deposited film increases as the amount of ultraviolet rays increases, and the amount of ultraviolet rays generated is proportional to the power input to the electrodes. Therefore, what is the key to increasing the formation rate of vapor deposition? , 71
1- et al [The input power to the pole is greatly reduced, but if the current density of the cathode increases, the cathode suffers lateral damage and deteriorates significantly, so there is a limit to increasing the input power. There was power.

In this discharge built-in type chemical vapor deposition apparatus, the substrate was disposed at the bottom, and the discharge electrode was aligned in the discharge space to generate L1 plasma in the horizontal force direction. Lka・
The plasma emitted between the L electrodes is diffused in a direction perpendicular to the direction of discharge, and there is a risk that this diffused plasma may damage the deposited film on the substrate placed below, so this should be prevented. In order to achieve this, it is necessary to place the substrate at a position far away from the mean free movement of ions and electrons in the plasma. On the other hand, the substrate must be placed as close to the light source as possible in order to increase the intensity of the ultraviolet rays irradiated onto the substrate and increase its effectiveness. Therefore, if the substrate is moved to a position far from the mean free path of ions or electrons, the efficiency decreases and there is a problem that a sufficient deposition film formation rate cannot be obtained.

Therefore, the present invention has been made in consideration of these spring sentiments, and has made it possible to input a large amount of power with a simple configuration, and also prevents the diffusion of plasma to the substrate, allowing the substrate to be used as a light source. It is an object of the present invention to provide a former chemical vapor deposition device Iv with a built-in photoluminescent layer that can efficiently form a deposited film by allowing close contact.

The structure is such that the reaction space in which the substrate to be processed is placed and the discharge space in which the plasma discharge generates ultraviolet rays that cause a photochemical reaction in the photoreactive gas are surrounded by the same container, and the radiation observation is interrupted. A plurality of cathodes are disposed circumferentially on the side wall of the container near the substrate, and an anode is disposed in the center of the discharge space far from the substrate (IL+), producing a conical plasma discharge. do.

The present invention will be specifically explained below using examples shown in the drawings.

The container 1 is approximately cylindrical in shape, and the lower side wall has a supply hole 11 through which discharge gas and photoreactive gas are supplied, and the upper side wall has a hole through which these gases are discharged. An outlet hole 12 is provided, and a heater'? : Inner elbow trial support 13
The arrangement is disgusting. C) (not shown) A substrate 24, which is an object to be processed that is taken in and taken out from the opening, is supported by the sample support 13, and the space below this constitutes the reaction space 5. Below this reaction space 1015 is a discharge space 3 in which plasma discharge is performed, and no partition wall made of glass or the like is provided between the inner spaces 1u33 and 5. A large hemispherical anode 6 is arranged in the center of the bottom of the container 1, and is arranged in a circumferential manner on the side wall of the container 1, which corresponds to the bokai of Ukuukoku 3.5. It is set up. This is a 4N7H tungsten af that has been tightly wound into a coil and then re-wound into a coarse coil, and a paste of alkaline earth metal oxide is added to improve electron emission. It feels like it's applied.

When a voltage is applied between both W and ff16.7, plasma discharge occurs in a conical shape in the vertical direction, and the generated ultraviolet rays are irradiated onto the substrate 4 above. As shown, the composition of the photochemical reaction gas flowing into the reaction space 5 is 5 mnHg of argon as a carrier gas, 73 @ 3 x 10 tank-kg as a photosensitizer, and carbon tetrahydride as a gas for decomposition deposition. Consists of a mixed gas force of 0.0,3 mm'Hg, and is used as the discharge gas by Tomi Shin's Arbo 7,! l: 2x10g of mercury mixture gas is supplied.

The substrate 4 is an alumina plate heated to about 150°C, and when it is discharged into the space 3 at a voltage of 100V and a current of 16A, argon and mercury are released.
photodecomposes, and amorphous silicon is deposited on the substrate 4.

7! : As another embodiment, the discharge space 3 may be placed above and the substrate 4 may be placed below.

What is essential here is that a large number of single poles 7 are arranged in the same circumference so that plasma discharge can be performed vertically in a conical shape. Therefore, even if a large amount of power is input, since the negative 7 is made up of a large number of η, the current 9M degree of the 1st electrode 7 will not become excessive, and the loss of 4% will not occur, so the ultraviolet rays of the large leaf can be generated. The plasma then diffuses in the direction perpendicular to the discharge direction and in the horizontal direction.
There is almost no diffusion in the taut upper part, and even if the substrate 4 is brought close to the discharge space 3, the deposited film will not be damaged by plasma ions or electrons. Since the shade and the shade @A't are circumferential, the ultraviolet (ultraviolet) glue passes through the circumference P9 and is not obstructed by the cathode 7. Next, the generation of ultraviolet rays t increases as the plasma thickness increases. The plasma is thicker than that discharged in the horizontal direction, and therefore more ultraviolet light (Mll) is irradiated downward. Therefore, it is possible to input a large amount of power, and it is also possible to arrange the substrate 4 close to the discharge space 3, so that the substrate 4 can be effectively irradiated with ultraviolet rays of large leaves, thereby increasing the deposition film formation rate. Can be made significantly larger.

As explained above, the present invention provides a discharge space near the substrate.
-Since several cathodes are arranged around the side wall of the container and an anode is arranged in the center of the discharge space on the side far from the substrate, it is possible to input a large amount of power with a simple qL configuration. To provide a photochemical evaporation device with a built-in discharge that can form a deposited film with less movement, since it is possible to prevent the diffusion of plasma toward the substrate, and to make it possible to bring all the substrates into light contact with each other. 6.

[Brief explanation of the drawing]

Figure 1 is a vertical cross-sectional view of the male side of the present invention, and Figure 2 is also a cross-sectional view T″. 1... Container 3... Discharge space 4... Substrate 5...
・Reaction space 6... Positive sand 7... Cathode applicant Run 1i stock agent Patent attorney Den Cho, Toranosuke Diagram 1 procedural amendment (voluntary) June 3, 1980 Commissioner of the Patent Office Mr. Kazuo Wakasugi 1, Indication of the case 1978 Patent Application No. 18778 2, Title of the invention Photochemical vapor deposition device 3, Relationship to the case by the person making the amendment Patent applicant Name (Name) Representative of Kukuo Electric Co., Ltd. Yu Fu Treasury 4, Agent 6 Number of inventions increased by amendment 7kL8 Contents of amendment Annex 9 Mei M II page 6 17? 'T eye 17) r[E100V1
1f style 16AJ? Corrected to "Voltage 60V Current 20A". that's all

Claims (1)

[Claims] A reaction space where the substrate to be processed is placed and a discharge space where ultraviolet rays that cause a photochemical reaction in a photoreactive gas are generated by plasma discharge are enclosed in the same container for J$ 329, and the substrate in the discharge space is surrounded by the same container. Several cathodes are placed on the inner wall of the container on the near side, and an anode is placed on the substrate at the center of the discharge space on the far side. Features of photochemical vaporization equipment.