JPS56130474A - Dry etching apparatus - Google Patents
Dry etching apparatusInfo
- Publication number
- JPS56130474A JPS56130474A JP3157480A JP3157480A JPS56130474A JP S56130474 A JPS56130474 A JP S56130474A JP 3157480 A JP3157480 A JP 3157480A JP 3157480 A JP3157480 A JP 3157480A JP S56130474 A JPS56130474 A JP S56130474A
- Authority
- JP
- Japan
- Prior art keywords
- substance
- gas
- etching
- treated
- etching gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To reduce the amount of an etching gas used and carry out uniform etching apparatus with guide means for guiding the gas so that it flows vertically from an upper part of each substance to be treated.
CONSTITUTION: Most of feed pipe 29 put in treatment chamber 15 is placed between circular electrode table 23 and electrode 26, and each cylindrical guide member 31 made of insulating material is vertically supported so that the axial core passes through the center of substance 30 to be treated. Chamber 15 is evacuated with exhaust pipe 16, and while blowing an etching gas into each member 31 from pipe 29, power is supplied to table 23 from a high frequency power source. At this time, the gas flows in the arrow 32 direction and covers each substance 30 from the center toward the outside. Thus, a smaller amount of the etching gas is used, and uniform etching can be carried out.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3157480A JPS56130474A (en) | 1980-03-14 | 1980-03-14 | Dry etching apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3157480A JPS56130474A (en) | 1980-03-14 | 1980-03-14 | Dry etching apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56130474A true JPS56130474A (en) | 1981-10-13 |
Family
ID=12334937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3157480A Pending JPS56130474A (en) | 1980-03-14 | 1980-03-14 | Dry etching apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56130474A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58190030A (en) * | 1982-04-30 | 1983-11-05 | Kokusai Electric Co Ltd | Plasma etching apparatus providing parallel flat electrode |
JPS5947732A (en) * | 1982-09-10 | 1984-03-17 | Hitachi Ltd | Semiconductor manufacturing apparatus |
JPS5966120A (en) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | Semiconductor manufacturing device |
-
1980
- 1980-03-14 JP JP3157480A patent/JPS56130474A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58190030A (en) * | 1982-04-30 | 1983-11-05 | Kokusai Electric Co Ltd | Plasma etching apparatus providing parallel flat electrode |
JPS5947732A (en) * | 1982-09-10 | 1984-03-17 | Hitachi Ltd | Semiconductor manufacturing apparatus |
JPS5966120A (en) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | Semiconductor manufacturing device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IE830747L (en) | Plasma treatment process | |
JPS6448421A (en) | Ashing method | |
JPS56130474A (en) | Dry etching apparatus | |
US3647676A (en) | Method and apparatus for reacting ionized gas with a non-gaseous substance | |
JPS55138237A (en) | Manufacture of semiconductor device | |
JPS5617902A (en) | Water dissociating method utilizing microwave plasma phenomenon | |
JPS5254897A (en) | Plasma ion source for solid materials | |
JPS5649737A (en) | Corona discharge treatment of plastic film | |
JPS5385782A (en) | Treating apparatus with activated gas | |
JPS5496359A (en) | Heat treatment method for semiconductor device | |
JPS5696841A (en) | Microwave plasma treating apparatus | |
JPS544571A (en) | Plasma treating apparatus | |
JPS5399075A (en) | Adsorbing treatment apparatus | |
JPS5726442A (en) | Plasma thin film forming device | |
JPS51125969A (en) | Active sludge process | |
JPS5732643A (en) | Annealing method of compound semiconductor single crystal | |
JPS579868A (en) | Surface treating apparatus with microwave plasma | |
JPS56152969A (en) | Ion etching apparatus | |
JPS5794565A (en) | Surface treatment of pipe | |
JPS55128584A (en) | Plasma etching device | |
JPS57194522A (en) | Thermal treatment of semiconductor wafer | |
SU368964A1 (en) | DEVICE FOR MIXING GAS WITH ELECTROLYT AT DIMENSIONAL ELECTROCHEMICAL TREATMENT | |
JPS5472534A (en) | High frequency heating device | |
JPS57100905A (en) | Ozonizer | |
JPS5591980A (en) | Plasma treating apparatus |