JPS56130474A - Dry etching apparatus - Google Patents

Dry etching apparatus

Info

Publication number
JPS56130474A
JPS56130474A JP3157480A JP3157480A JPS56130474A JP S56130474 A JPS56130474 A JP S56130474A JP 3157480 A JP3157480 A JP 3157480A JP 3157480 A JP3157480 A JP 3157480A JP S56130474 A JPS56130474 A JP S56130474A
Authority
JP
Japan
Prior art keywords
substance
gas
etching
treated
etching gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3157480A
Other languages
Japanese (ja)
Inventor
Toru Otsubo
Susumu Aiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3157480A priority Critical patent/JPS56130474A/en
Publication of JPS56130474A publication Critical patent/JPS56130474A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To reduce the amount of an etching gas used and carry out uniform etching apparatus with guide means for guiding the gas so that it flows vertically from an upper part of each substance to be treated.
CONSTITUTION: Most of feed pipe 29 put in treatment chamber 15 is placed between circular electrode table 23 and electrode 26, and each cylindrical guide member 31 made of insulating material is vertically supported so that the axial core passes through the center of substance 30 to be treated. Chamber 15 is evacuated with exhaust pipe 16, and while blowing an etching gas into each member 31 from pipe 29, power is supplied to table 23 from a high frequency power source. At this time, the gas flows in the arrow 32 direction and covers each substance 30 from the center toward the outside. Thus, a smaller amount of the etching gas is used, and uniform etching can be carried out.
COPYRIGHT: (C)1981,JPO&Japio
JP3157480A 1980-03-14 1980-03-14 Dry etching apparatus Pending JPS56130474A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3157480A JPS56130474A (en) 1980-03-14 1980-03-14 Dry etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3157480A JPS56130474A (en) 1980-03-14 1980-03-14 Dry etching apparatus

Publications (1)

Publication Number Publication Date
JPS56130474A true JPS56130474A (en) 1981-10-13

Family

ID=12334937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3157480A Pending JPS56130474A (en) 1980-03-14 1980-03-14 Dry etching apparatus

Country Status (1)

Country Link
JP (1) JPS56130474A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190030A (en) * 1982-04-30 1983-11-05 Kokusai Electric Co Ltd Plasma etching apparatus providing parallel flat electrode
JPS5947732A (en) * 1982-09-10 1984-03-17 Hitachi Ltd Semiconductor manufacturing apparatus
JPS5966120A (en) * 1982-10-08 1984-04-14 Hitachi Ltd Semiconductor manufacturing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190030A (en) * 1982-04-30 1983-11-05 Kokusai Electric Co Ltd Plasma etching apparatus providing parallel flat electrode
JPS5947732A (en) * 1982-09-10 1984-03-17 Hitachi Ltd Semiconductor manufacturing apparatus
JPS5966120A (en) * 1982-10-08 1984-04-14 Hitachi Ltd Semiconductor manufacturing device

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