JPS579868A - Surface treating apparatus with microwave plasma - Google Patents

Surface treating apparatus with microwave plasma

Info

Publication number
JPS579868A
JPS579868A JP8136580A JP8136580A JPS579868A JP S579868 A JPS579868 A JP S579868A JP 8136580 A JP8136580 A JP 8136580A JP 8136580 A JP8136580 A JP 8136580A JP S579868 A JPS579868 A JP S579868A
Authority
JP
Japan
Prior art keywords
antenna
microwave
substance
quartz
electrically conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8136580A
Other languages
Japanese (ja)
Inventor
Masahiko Yotsuyanagi
Masahiko Hirose
Takeshi Yasui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8136580A priority Critical patent/JPS579868A/en
Publication of JPS579868A publication Critical patent/JPS579868A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)

Abstract

PURPOSE:To obtain stable plasma by introducing microwaves into a tightly sealed vessel with an antenna coated with an electrically conductive substance so as to efficiently implant microwave energy into a treating chamber. CONSTITUTION:A tightly sealed vessel 5 containing products 27 to be treated is evacuated with an exhaust system 8, and a gaseous mixture of N2 and H2 is fed from a gas leading inlet 7 under pressure. An antenna 21 made of electrically nonconductive substance such as quartz and partially coated with an electrically conductive substance such as copper is enclosed in a pipe 22 made of substance transmitting microwaves such as quartz, and it is airtightly put in the vessel 5 at the central part. A cooling gas such as Ar is allowed to flow in the antenna 21. Discharge is caused in the gaseous mixture with microwave power applied from a microwave source 1 thorugh a waveguide 2 to generate plasma. By the microwave discharge plasma activated nuclei are produced, and they react with the products 27.
JP8136580A 1980-06-18 1980-06-18 Surface treating apparatus with microwave plasma Pending JPS579868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8136580A JPS579868A (en) 1980-06-18 1980-06-18 Surface treating apparatus with microwave plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8136580A JPS579868A (en) 1980-06-18 1980-06-18 Surface treating apparatus with microwave plasma

Publications (1)

Publication Number Publication Date
JPS579868A true JPS579868A (en) 1982-01-19

Family

ID=13744294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8136580A Pending JPS579868A (en) 1980-06-18 1980-06-18 Surface treating apparatus with microwave plasma

Country Status (1)

Country Link
JP (1) JPS579868A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235500A (en) * 1985-08-06 1987-02-16 理化学研究所 Antenna apparatus
WO2012032596A1 (en) * 2010-09-06 2012-03-15 株式会社イー・エム・ディー Plasma processing apparatus
JP2015530694A (en) * 2012-07-11 2015-10-15 ユニヴェルシテ ジョセフ フーリエ−グレノーブル アンUniversite Joseph Fourier−Grenoble 1 Surface wave applicator for plasma generation

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235500A (en) * 1985-08-06 1987-02-16 理化学研究所 Antenna apparatus
WO2012032596A1 (en) * 2010-09-06 2012-03-15 株式会社イー・エム・ディー Plasma processing apparatus
CN103155718A (en) * 2010-09-06 2013-06-12 Emd株式会社 Plasma processing apparatus
EP2615888A1 (en) * 2010-09-06 2013-07-17 EMD Corporation Plasma processing apparatus
JP5462368B2 (en) * 2010-09-06 2014-04-02 株式会社イー・エム・ディー Plasma processing equipment
EP2615888A4 (en) * 2010-09-06 2015-01-21 Emd Corp Plasma processing apparatus
JP2015530694A (en) * 2012-07-11 2015-10-15 ユニヴェルシテ ジョセフ フーリエ−グレノーブル アンUniversite Joseph Fourier−Grenoble 1 Surface wave applicator for plasma generation

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