JPS5644037A - Microwave plasma fine particle treating apparatus - Google Patents

Microwave plasma fine particle treating apparatus

Info

Publication number
JPS5644037A
JPS5644037A JP11923779A JP11923779A JPS5644037A JP S5644037 A JPS5644037 A JP S5644037A JP 11923779 A JP11923779 A JP 11923779A JP 11923779 A JP11923779 A JP 11923779A JP S5644037 A JPS5644037 A JP S5644037A
Authority
JP
Japan
Prior art keywords
fine particles
plasma
vessel
antenna
treated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11923779A
Other languages
Japanese (ja)
Inventor
Masahiko Hirose
Masato Sakai
Toshihiko Ochiai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11923779A priority Critical patent/JPS5644037A/en
Publication of JPS5644037A publication Critical patent/JPS5644037A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

PURPOSE:To make the recovery of the treated fine particles extremely easy at the time of performing treatment of the fine particles with the plasma by microwave dischraging by introducing an antenna for microwaves into a hermetic vessel containing the fine particles by way of a cylindrical body. CONSTITUTION:A heat-resistant fine particle containing vessel 16 made of quartiz, alumina or the like is disposed in a plasma forming chamber 5 of hermetic type made of metals, and the fine particles 17 to be treated are put therein. A cylindrical body 22 made of quartz is also placed in the central part of the vessle 16 and an antenna 21 made of copper or the like is disposed therein. The inside of the plasma forming chamber 5 is evacuated to about 1X10<-5>torr by an exhauster 8 and the plasma forming gas in a bomb 12 is admitted therein. Next, microwaves of 10<9>- 10<12>Hz are generated with a microwave generator 1 and are led to the antenna 21 so that plasma is produced by discharging. The fine particles 17 are treated with this plasma and thaken out from the vessel 16 without staining the hermetic vessel 16.
JP11923779A 1979-09-19 1979-09-19 Microwave plasma fine particle treating apparatus Pending JPS5644037A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11923779A JPS5644037A (en) 1979-09-19 1979-09-19 Microwave plasma fine particle treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11923779A JPS5644037A (en) 1979-09-19 1979-09-19 Microwave plasma fine particle treating apparatus

Publications (1)

Publication Number Publication Date
JPS5644037A true JPS5644037A (en) 1981-04-23

Family

ID=14756351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11923779A Pending JPS5644037A (en) 1979-09-19 1979-09-19 Microwave plasma fine particle treating apparatus

Country Status (1)

Country Link
JP (1) JPS5644037A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59177931A (en) * 1983-03-28 1984-10-08 Fujitsu Ltd Microwave processor
CN100361918C (en) * 2006-01-10 2008-01-16 中国铝业股份有限公司 Water hardened aluminium oxide pouring material binding agent and preparation process thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59177931A (en) * 1983-03-28 1984-10-08 Fujitsu Ltd Microwave processor
CN100361918C (en) * 2006-01-10 2008-01-16 中国铝业股份有限公司 Water hardened aluminium oxide pouring material binding agent and preparation process thereof

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