JPS59177931A - Microwave processor - Google Patents

Microwave processor

Info

Publication number
JPS59177931A
JPS59177931A JP58051849A JP5184983A JPS59177931A JP S59177931 A JPS59177931 A JP S59177931A JP 58051849 A JP58051849 A JP 58051849A JP 5184983 A JP5184983 A JP 5184983A JP S59177931 A JPS59177931 A JP S59177931A
Authority
JP
Japan
Prior art keywords
waveguide
cooling gas
magnetron
gas
antenna
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58051849A
Other languages
Japanese (ja)
Other versions
JPH0775198B2 (en
Inventor
Shuzo Fujimura
藤村 修三
Hiroshi Yano
弘 矢野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58051849A priority Critical patent/JPH0775198B2/en
Publication of JPS59177931A publication Critical patent/JPS59177931A/en
Publication of JPH0775198B2 publication Critical patent/JPH0775198B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357Generation remote from the workpiece, e.g. down-stream

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To remove heat radiated from a microwave processor, and to prevent a magnetron, etc. from curtailment of usable life by a method wherein the antenna of the microwave generator is arranged in a waveguide, and gas is flowed in the waveguide to cool the antenna. CONSTITUTION:A cooling gas feed port 14 is provided in a side wall near the chamber 1 of a waveguide 2, a cooling gas exhaust port 13 is provided at an edge face of the side provided with a magnetron 3, and moreover a gas circulating pipe 12 to pass outside of a microwave processor is arranged between the cooling gas feed port 14 and the exhaust port 13 thereof. For example, nitrogen gas is circulated as cooling gas in the order of a cooler 10, a compressor 11, the cooling gas feed port 14, the waveguide 2, the cooling gas exhaust port 13, and to the cooler 10 again. Accordingly, the antenna 4 of the magnetron 3 can be cooled directly by the nitrogen gas.

Description

【発明の詳細な説明】 (1)発明の技術分野 本発明はマイクロ波電力の照射により活性化されたガス
を発生してプラズマエツチングなどを行うマイクロ波処
理装置に関する。
DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a microwave processing apparatus that performs plasma etching and the like by generating activated gas by irradiation with microwave power.

(2)技術の背景 マイクロ波を利用して被加工物の加熱やプラズマを発生
させてなすマイクロ波処理(例えばエツチング)は、最
近の高密度半導体集積回路の製造において主流をなす技
術である。
(2) Background of the technology Microwave processing (for example, etching), which uses microwaves to heat a workpiece and generate plasma, is a mainstream technology in recent manufacturing of high-density semiconductor integrated circuits.

第1図は上記マイクロ波処理を行うマイクロ(1) 波処理装置の構成を示す図で、マイクロ波発生装置(マ
グネトロン)3で発生したマイクロ波を放出するための
アンテナ4を内部端に配設した断面矩形状の導波管2は
、例えば石英などの絶縁物で形成された窓7を介してマ
イクロ波処理を行うチェンバ1に連結している。チェン
バ1には処理用ガスの導入口8および排気口9が設けら
れ、内部には被加工物(例えばウェハ)6が載置される
FIG. 1 is a diagram showing the configuration of a microwave processing device (1) that performs the above-mentioned microwave processing, and an antenna 4 for emitting microwaves generated by a microwave generator (magnetron) 3 is arranged at the internal end. The waveguide 2 having a rectangular cross section is connected to a chamber 1 for performing microwave processing via a window 7 formed of an insulator such as quartz. The chamber 1 is provided with an inlet 8 and an exhaust port 9 for processing gas, and a workpiece (for example, a wafer) 6 is placed therein.

また導波管2には反射を最小としてマイクロ波が効率良
く吸収されるように調整するチューナー5が設けられて
いる。
Further, the waveguide 2 is provided with a tuner 5 that adjusts the microwaves so that reflection is minimized and microwaves are efficiently absorbed.

かかる構成の装置において、アンテナ4から放出される
マイクロ波は導波管2内を伝播し、窓7を通過してチェ
ンバ1内に照射される。他方、処理用ガス(例えばフレ
オンガス、 CFす)はガス導入口8からチェンバ1内
に導入され、上記マイクロ波の照射によりプラズマ化さ
れ、各種の処理が行われる。なお、チェンバ1内は排気
口9に接続する図示せぬ排気装置により常に減圧されて
いる。
In a device having such a configuration, microwaves emitted from the antenna 4 propagate within the waveguide 2, pass through the window 7, and are irradiated into the chamber 1. On the other hand, a processing gas (for example, Freon gas, CF gas) is introduced into the chamber 1 through the gas introduction port 8, is turned into plasma by the microwave irradiation, and various processing is performed. Note that the pressure inside the chamber 1 is constantly reduced by an exhaust device (not shown) connected to the exhaust port 9.

(2) (3)従来技術と問題点 ところで、上述したマイクロ波装置においては、処理中
にチェンバ1内で発生ずる熱が金属性の導波管2を伝わ
り、アンテナ4およびそれを介してマグネトロン3を必
要以上の高温に加熱することが経験されている。
(2) (3) Prior Art and Problems By the way, in the above-mentioned microwave device, the heat generated in the chamber 1 during processing is transmitted through the metal waveguide 2, and is transmitted through the antenna 4 and the magnetron through it. It has been experienced that 3 is heated to a higher temperature than necessary.

従来マグネトロン3には、マグネトロン自体の発生する
熱によるアンテナ4およびマグネトロン本体の加熱を防
止するために図示せぬ冷却器が設けられている。しかし
、この冷却器はマグネトロン自体の発生する熱を除去す
る程度の能力しがないため、チェンバ1から伝わる熱に
よる加熱には対処できない。そのためマグネトロン3お
よびアンテナ4が異常に高温となり、その使用寿命が短
縮される問題がある。
Conventionally, the magnetron 3 is provided with a cooler (not shown) in order to prevent the antenna 4 and the magnetron body from being heated by the heat generated by the magnetron itself. However, this cooler does not have the ability to remove the heat generated by the magnetron itself, so it cannot deal with the heating caused by the heat transmitted from the chamber 1. As a result, the magnetron 3 and antenna 4 become abnormally high in temperature, resulting in a problem that their service life is shortened.

また、導波管2を伝わる熱によりチェンバ1と導波管2
の接続面に配設されているOリング(図示せず)および
窓7を形成している絶縁物と処理用ガスとの反応が促進
し、0リングおよび窓7が損傷して気密性が保たれない
などの問題もある。
In addition, due to the heat transmitted through the waveguide 2, the chamber 1 and the waveguide 2
The reaction between the processing gas and the O-ring (not shown) provided on the connection surface of the window 7 and the insulating material forming the window 7 will be accelerated, damaging the O-ring and the window 7 and preventing airtightness. There are also problems such as not being able to hang out.

(3) (4)発明の目的 本発明は上記従来の問題点に鑑み、チェンバから導波管
を伝わって放出される熱を除去し、マグネトロンなどの
使用寿命の短縮が防止されるマイクロ波処理装置の提供
を目的とする。
(3) (4) Purpose of the Invention In view of the above-mentioned conventional problems, the present invention provides microwave treatment that removes heat emitted from a chamber through a waveguide and prevents shortening of the service life of magnetrons, etc. The purpose is to provide equipment.

(5)発明の構成 そしてこの目的は本発明によれば、マイクロ波処理のた
めの装置において、導波管内にマイクロ波発生装置のア
ンテナが配設され、該導波管内にガスを流して前記アン
テナを冷却する構成としたことを特徴とするマイクロ波
処理装置を提供することによって達成される。
(5) Structure and object of the invention According to the present invention, in an apparatus for microwave processing, an antenna of a microwave generator is disposed in a waveguide, and a gas is caused to flow in the waveguide. This is achieved by providing a microwave processing device characterized by having a configuration that cools the antenna.

(6)発明の実施例 以下本発明実施例を図面により詳述する。(6) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.

第2図は本発明実施例を説明するためのマイクロ波処理
装置の構成図で、同図において第1図と同じ部分は同じ
符号を付して示す。第2図を参照すると、導波管2のチ
ェンバ1に近い側壁に冷却ガス供給口14、またマグネ
トロン3が設けられている側の端面に上記冷却ガス排出
口13を設け、(4) 更にこれら冷却ガス供給口14および排出口13の間に
、マイクロ波処理装置の外部を通る例えば内径約3+n
mのガス循環パイプ12を配設する。そしてガス循環パ
イプ12の途中には、冷却器10およびコンプレッサー
11を設ける。
FIG. 2 is a block diagram of a microwave processing apparatus for explaining an embodiment of the present invention, and in this figure, the same parts as in FIG. 1 are designated by the same reference numerals. Referring to FIG. 2, the cooling gas supply port 14 is provided on the side wall of the waveguide 2 near the chamber 1, and the cooling gas discharge port 13 is provided on the end face on the side where the magnetron 3 is provided. Between the cooling gas supply port 14 and the discharge port 13, for example, an inner diameter of about 3+n passes through the outside of the microwave processing device.
m gas circulation pipes 12 are provided. A cooler 10 and a compressor 11 are provided in the middle of the gas circulation pipe 12.

上記冷却ガス供給口14および排出口13は、その径を
2〜3mmとし、マイクロ波を吸収しないように形成す
る。
The cooling gas supply port 14 and the discharge port 13 have a diameter of 2 to 3 mm and are formed so as not to absorb microwaves.

かかる構成において例えば冷却ガスとして窒素ガス(N
2)を冷却器10.コンプレッサー11、冷却ガス供給
口14、導波管2、冷却ガス排出口13、そして再び冷
却器の順に循環させる。窒素ガスは冷却器10で例えば
室温以下に冷却され、次いでコンプレッサー11で圧縮
されて約1 k’g/ cm2 の圧力で供給口14か
ら導波管2内に注入される。注入された窒素ガスは導波
管2内の熱を吸収しながら排出口13の方へ流れ、排出
口から冷却器10に送られ、上述した循環を繰り返す。
In such a configuration, for example, nitrogen gas (N
2) to the cooler 10. The gas is circulated in the order of the compressor 11, the cooling gas supply port 14, the waveguide 2, the cooling gas discharge port 13, and again the cooler. Nitrogen gas is cooled to, for example, room temperature or lower in a cooler 10, then compressed in a compressor 11, and injected into the waveguide 2 from a supply port 14 at a pressure of about 1 kg/cm2. The injected nitrogen gas flows toward the exhaust port 13 while absorbing heat within the waveguide 2, is sent from the exhaust port to the cooler 10, and the above-described circulation is repeated.

しかも窒素ガスはマイクロ波の伝播には何ら影響を与え
ない・上述した如く、窒素ガスによってマグネトロ(5
) ン3のアンテナ4を直接冷却することができるため、当
該マグネトロン3の寿命短縮を防止することができる。
Moreover, nitrogen gas has no effect on the propagation of microwaves.As mentioned above, nitrogen gas
) Since the antenna 4 of the magnetron 3 can be directly cooled, shortening of the life of the magnetron 3 can be prevented.

本願の発明者は上記実施例に示した条件によれば、従来
800時間であったマグネトロンの寿命を約1000時
間に延長することができることを確認した。
The inventor of the present application has confirmed that the life of the magnetron, which was conventionally 800 hours, can be extended to about 1000 hours under the conditions shown in the above examples.

なお、冷却ガスは上記窒素ガスに限るものではなく、他
のガス、例えば空気を用いても何ら本発明の効果を損な
うものではない。また、冷却ガスの温度および圧力は上
記値に限るものでなく、マイクロ波処理の形態に応じて
適宜選択する。
Note that the cooling gas is not limited to the above-mentioned nitrogen gas, and the effects of the present invention will not be impaired in any way even if other gases, such as air, are used. Further, the temperature and pressure of the cooling gas are not limited to the above values, and are appropriately selected depending on the form of microwave processing.

そして、上記冷却手段によれば、窓7の絶縁物および導
波管2とチェンバ1間に配設された0リングなどの損傷
も防止することができる。
According to the cooling means, damage to the insulator of the window 7 and the O-ring disposed between the waveguide 2 and the chamber 1 can also be prevented.

(7)発明の効果 以上詳細に説明した如く、本発明によれば導波管内に冷
却ガスを流ずことによりマグネトロンおよびその他の装
置構成部品の熱による使用寿命の短縮を防止できるマイ
クロ波処理装置を提供できるため、装置保守が従来より
容易となり半導体(6) 装置の生産性向」二に効果大である。
(7) Effects of the Invention As explained in detail above, according to the present invention, a microwave processing device can prevent shortening of the service life of the magnetron and other device components due to heat by flowing cooling gas into the waveguide. As a result, equipment maintenance is easier than before, which has a great effect on semiconductor (6) equipment productivity.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のマイクロ波処理装置の構成図、第2図は
本発明に係わるマイクロ波処理装置の構成図である。 1−チェンバ、2−導波管、3− マグネトロン、4−アンテナ、5− チューナー、1〇−冷却器、11−・ コンブレソザー、12−冷却ガス 循環パイプ (7) 第1図 第2図
FIG. 1 is a block diagram of a conventional microwave processing apparatus, and FIG. 2 is a block diagram of a microwave processing apparatus according to the present invention. 1-Chamber, 2-Waveguide, 3-Magnetron, 4-Antenna, 5-Tuner, 10-Cooler, 11-Combresozer, 12-Cooling gas circulation pipe (7) Fig. 1 Fig. 2

Claims (1)

【特許請求の範囲】[Claims] マイクロ波処理のための装置において、・導波管内にマ
イクロ波発生装置のアンテナが配設され、該導波管内に
ガスを流して前記アンテナを冷却する構成としたことを
特徴とするマイクロ波処理装置。
An apparatus for microwave processing, characterized in that an antenna of a microwave generator is disposed within a waveguide, and the antenna is cooled by flowing gas within the waveguide. Device.
JP58051849A 1983-03-28 1983-03-28 Microwave processing equipment Expired - Lifetime JPH0775198B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58051849A JPH0775198B2 (en) 1983-03-28 1983-03-28 Microwave processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58051849A JPH0775198B2 (en) 1983-03-28 1983-03-28 Microwave processing equipment

Publications (2)

Publication Number Publication Date
JPS59177931A true JPS59177931A (en) 1984-10-08
JPH0775198B2 JPH0775198B2 (en) 1995-08-09

Family

ID=12898296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58051849A Expired - Lifetime JPH0775198B2 (en) 1983-03-28 1983-03-28 Microwave processing equipment

Country Status (1)

Country Link
JP (1) JPH0775198B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62264623A (en) * 1986-05-13 1987-11-17 Fujitsu Ltd Microwave plasma processor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5644037A (en) * 1979-09-19 1981-04-23 Toshiba Corp Microwave plasma fine particle treating apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5644037A (en) * 1979-09-19 1981-04-23 Toshiba Corp Microwave plasma fine particle treating apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62264623A (en) * 1986-05-13 1987-11-17 Fujitsu Ltd Microwave plasma processor
JPH053736B2 (en) * 1986-05-13 1993-01-18 Fujitsu Ltd

Also Published As

Publication number Publication date
JPH0775198B2 (en) 1995-08-09

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