JPS6481321A - Plasma treatment device - Google Patents

Plasma treatment device

Info

Publication number
JPS6481321A
JPS6481321A JP23723687A JP23723687A JPS6481321A JP S6481321 A JPS6481321 A JP S6481321A JP 23723687 A JP23723687 A JP 23723687A JP 23723687 A JP23723687 A JP 23723687A JP S6481321 A JPS6481321 A JP S6481321A
Authority
JP
Japan
Prior art keywords
chamber
microwave
apex
plasma
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23723687A
Other languages
Japanese (ja)
Inventor
Koichiro Kawamura
Yoshimichi Hirobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP23723687A priority Critical patent/JPS6481321A/en
Publication of JPS6481321A publication Critical patent/JPS6481321A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To accelerate the supply of a reaction gas and the discharge of a reaction product and to reliably improve the plasma treatment speed by setting a certain ratio of a height from a sample depositing stand within a chamber to the apex of the chamber with respect to a wavelength of a microwave. CONSTITUTION:A high density plasma is generated within a chamber 2 through an interaction between a magnetic field and a microwave. When setting a height h from a wafer depositing stand 3 to the apex of a persienne 11 to 1/4 to 1/2 with respect to a wavelength lambda of the microwave, which causes the maximum amplitude of the microwave A to be always located within the chamber 2, whereby an electric field strength never decreases. Because it is possible to minimize the chamber capacity above the sample depositing stand 3 in the range within which the electric field strength of the microwave does not decrease, the supply of a reaction gas G and the discharge of a reaction product can be accelerated without decreasing the plasma density within the chamber 2, whereby it is ensured that the etching speed of a wafer 5 is improved.
JP23723687A 1987-09-24 1987-09-24 Plasma treatment device Pending JPS6481321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23723687A JPS6481321A (en) 1987-09-24 1987-09-24 Plasma treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23723687A JPS6481321A (en) 1987-09-24 1987-09-24 Plasma treatment device

Publications (1)

Publication Number Publication Date
JPS6481321A true JPS6481321A (en) 1989-03-27

Family

ID=17012406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23723687A Pending JPS6481321A (en) 1987-09-24 1987-09-24 Plasma treatment device

Country Status (1)

Country Link
JP (1) JPS6481321A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2663479A1 (en) * 1990-06-13 1991-12-20 Samsung Electronics Co Ltd Logic circuit including two inputs and one output
US5266154A (en) * 1991-04-26 1993-11-30 Sony Corporation Dry etching method
US5342472A (en) * 1991-08-12 1994-08-30 Tokyo Electron Limited Plasma processing apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2663479A1 (en) * 1990-06-13 1991-12-20 Samsung Electronics Co Ltd Logic circuit including two inputs and one output
US5266154A (en) * 1991-04-26 1993-11-30 Sony Corporation Dry etching method
US5342472A (en) * 1991-08-12 1994-08-30 Tokyo Electron Limited Plasma processing apparatus

Similar Documents

Publication Publication Date Title
EP0180020A3 (en) Plasma etching system
KR880009541A (en) Plasma treatment apparatus and method
IE830747L (en) Plasma treatment process
JPS5713174A (en) Reactive sputtering method
AU1352192A (en) High density plasma deposition and etching apparatus
JPS56105483A (en) Dry etching device
EP0641150A4 (en) Process apparatus.
JPS57164986A (en) Microwave plasma etching device
JPS6481321A (en) Plasma treatment device
JPS5676242A (en) Treating apparatus using gas plasma reaction
JPS57203781A (en) Plasma working device
JPS5645761A (en) Plasma reaction apparatus
JPS5621330A (en) Method of dry etching
JPS56166377A (en) Plasma treating method of hollow body
JPS5298475A (en) Plasma treating apparatus
JPS5524941A (en) Dry etching apparatus
JPS5696841A (en) Microwave plasma treating apparatus
JPS5539690A (en) Plasma etching device
JPS5644037A (en) Microwave plasma fine particle treating apparatus
JPS6435914A (en) Dry etching device
JPS6481213A (en) Plasma process apparatus
JPS57174465A (en) High frequency ion etching device
JPS6464326A (en) Plasma cleaning method
JPS648624A (en) Plasma apparatus
JPS56130474A (en) Dry etching apparatus