JPS6481321A - Plasma treatment device - Google Patents
Plasma treatment deviceInfo
- Publication number
- JPS6481321A JPS6481321A JP23723687A JP23723687A JPS6481321A JP S6481321 A JPS6481321 A JP S6481321A JP 23723687 A JP23723687 A JP 23723687A JP 23723687 A JP23723687 A JP 23723687A JP S6481321 A JPS6481321 A JP S6481321A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- microwave
- apex
- plasma
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To accelerate the supply of a reaction gas and the discharge of a reaction product and to reliably improve the plasma treatment speed by setting a certain ratio of a height from a sample depositing stand within a chamber to the apex of the chamber with respect to a wavelength of a microwave. CONSTITUTION:A high density plasma is generated within a chamber 2 through an interaction between a magnetic field and a microwave. When setting a height h from a wafer depositing stand 3 to the apex of a persienne 11 to 1/4 to 1/2 with respect to a wavelength lambda of the microwave, which causes the maximum amplitude of the microwave A to be always located within the chamber 2, whereby an electric field strength never decreases. Because it is possible to minimize the chamber capacity above the sample depositing stand 3 in the range within which the electric field strength of the microwave does not decrease, the supply of a reaction gas G and the discharge of a reaction product can be accelerated without decreasing the plasma density within the chamber 2, whereby it is ensured that the etching speed of a wafer 5 is improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23723687A JPS6481321A (en) | 1987-09-24 | 1987-09-24 | Plasma treatment device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23723687A JPS6481321A (en) | 1987-09-24 | 1987-09-24 | Plasma treatment device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6481321A true JPS6481321A (en) | 1989-03-27 |
Family
ID=17012406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23723687A Pending JPS6481321A (en) | 1987-09-24 | 1987-09-24 | Plasma treatment device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6481321A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2663479A1 (en) * | 1990-06-13 | 1991-12-20 | Samsung Electronics Co Ltd | Logic circuit including two inputs and one output |
US5266154A (en) * | 1991-04-26 | 1993-11-30 | Sony Corporation | Dry etching method |
US5342472A (en) * | 1991-08-12 | 1994-08-30 | Tokyo Electron Limited | Plasma processing apparatus |
-
1987
- 1987-09-24 JP JP23723687A patent/JPS6481321A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2663479A1 (en) * | 1990-06-13 | 1991-12-20 | Samsung Electronics Co Ltd | Logic circuit including two inputs and one output |
US5266154A (en) * | 1991-04-26 | 1993-11-30 | Sony Corporation | Dry etching method |
US5342472A (en) * | 1991-08-12 | 1994-08-30 | Tokyo Electron Limited | Plasma processing apparatus |
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