JPS5496359A - Heat treatment method for semiconductor device - Google Patents
Heat treatment method for semiconductor deviceInfo
- Publication number
- JPS5496359A JPS5496359A JP15985177A JP15985177A JPS5496359A JP S5496359 A JPS5496359 A JP S5496359A JP 15985177 A JP15985177 A JP 15985177A JP 15985177 A JP15985177 A JP 15985177A JP S5496359 A JPS5496359 A JP S5496359A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- heat treatment
- cover
- gas
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To enhance the heat treatment quality for the semiconductor wafer by using the auxiliary tube featuring an outer dameter smaller than the inner diameter of the furnace core tube in the heat treatment by the open tube method.
CONSTITUTION: Auxiliary tube 7 which is composed of the heat-resistant material and then inserted into furnace core tube 1 contains branch tube 72 and 73 which are switched via switching valve 7 and then linked to gas path tube 71 piercing through cover 3 of tube 1. Semiconductor wafers 5 held by boat 4 are distributed to tube 7, and the inactive gas is jetted in from tube 72 in the case of the diffusion process for the impurity when wafer 5 is put in and taken out of tube 1. And in the case of the heat treatment, tube 7 advances up to the virtual line position, cover 3 is mounted to exit 12 of tube 1, and the gas to create the treatment atmosphere is introduced through gas inlet 11 and then exhausted through tube 73. Thus, the oxidation due to the external atmosphere can be avoided when the wafer is put in and taken out, the slow cooling effect being expected. Furthermore, the external atmosphere is prevented from intruding through the gap between tube 7 and cover 3 under processing, thus realizing the uniformity and the quality of the heat treatment.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15985177A JPS5496359A (en) | 1977-12-28 | 1977-12-28 | Heat treatment method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15985177A JPS5496359A (en) | 1977-12-28 | 1977-12-28 | Heat treatment method for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5496359A true JPS5496359A (en) | 1979-07-30 |
| JPS5746647B2 JPS5746647B2 (en) | 1982-10-05 |
Family
ID=15702611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15985177A Granted JPS5496359A (en) | 1977-12-28 | 1977-12-28 | Heat treatment method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5496359A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5632721A (en) * | 1979-08-27 | 1981-04-02 | Nec Corp | Heat treating device |
| JPS607122A (en) * | 1983-06-01 | 1985-01-14 | アムテック・システムズ・インコーポレーテッド | Method and device for treating plural semiconductor wafers in furnace |
| JPS61161711A (en) * | 1985-01-11 | 1986-07-22 | Denkoo:Kk | Thermal treatment method of semiconductor and thermal treatment equipment |
| JPS62128524A (en) * | 1985-11-29 | 1987-06-10 | Deisuko Saiyaa Japan:Kk | Vertical type semiconductor thermal treatment equipment with reaction tube having multiple structure |
| JPH01315131A (en) * | 1988-03-09 | 1989-12-20 | Tel Sagami Ltd | Heat treatment and apparatus therefor |
| CN103038865A (en) * | 2010-06-04 | 2013-04-10 | 信越化学工业株式会社 | Heat-treatment furnace |
-
1977
- 1977-12-28 JP JP15985177A patent/JPS5496359A/en active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5632721A (en) * | 1979-08-27 | 1981-04-02 | Nec Corp | Heat treating device |
| JPS607122A (en) * | 1983-06-01 | 1985-01-14 | アムテック・システムズ・インコーポレーテッド | Method and device for treating plural semiconductor wafers in furnace |
| JPH0262942B2 (en) * | 1983-06-01 | 1990-12-27 | Amutetsuku Shisutemuzu Inc | |
| JPS61161711A (en) * | 1985-01-11 | 1986-07-22 | Denkoo:Kk | Thermal treatment method of semiconductor and thermal treatment equipment |
| JPS62128524A (en) * | 1985-11-29 | 1987-06-10 | Deisuko Saiyaa Japan:Kk | Vertical type semiconductor thermal treatment equipment with reaction tube having multiple structure |
| JPH01315131A (en) * | 1988-03-09 | 1989-12-20 | Tel Sagami Ltd | Heat treatment and apparatus therefor |
| CN103038865A (en) * | 2010-06-04 | 2013-04-10 | 信越化学工业株式会社 | Heat-treatment furnace |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5746647B2 (en) | 1982-10-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5767173A (en) | Plasma etching device | |
| JPS5496359A (en) | Heat treatment method for semiconductor device | |
| JPS5460236A (en) | Etching method | |
| JPS57118635A (en) | Manufacture of semiconductor device | |
| JPS5477573A (en) | Operating method of plasma treating apparatus | |
| JPS53117380A (en) | Heat treatmetn apparatus for semiconductor wafers | |
| JPS53106573A (en) | Gas treatment method of semiconductor wafers | |
| JPS52139373A (en) | Treating method for compound semiconductor | |
| JPS52149969A (en) | Method of putting wafers into and out from reaction tube in heat-treatment furnace | |
| JPS53123081A (en) | Semiconductor wafer heat treatment apparatus | |
| JPH0645268A (en) | Heat treating furnace | |
| JPH04350927A (en) | Heat treatment device for semiconductor wafer | |
| JPS5255864A (en) | Dry etching device | |
| JPS62185313A (en) | Diffusion furnace device | |
| JPS6468920A (en) | Heat treatment of semiconductor wafer | |
| JPH0373134B2 (en) | ||
| JPS5294772A (en) | Impurity diffusion method | |
| JPS5473575A (en) | Etching method | |
| JPS54154268A (en) | Manufacture of semiconductor device | |
| JPS6367729A (en) | Semiconductor heat-treating apparatus | |
| JPS5216481A (en) | Waste gas washing process and apparatus | |
| JPH01243414A (en) | Diffusion method for semiconductor wafer | |
| JPS60194528A (en) | Heat treating device | |
| JPS5243361A (en) | Thermal diffusion device for production of semiconductor device | |
| JPS5565431A (en) | Semiconductor heating core tube |