JPS5473575A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS5473575A JPS5473575A JP14135977A JP14135977A JPS5473575A JP S5473575 A JPS5473575 A JP S5473575A JP 14135977 A JP14135977 A JP 14135977A JP 14135977 A JP14135977 A JP 14135977A JP S5473575 A JPS5473575 A JP S5473575A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- solution
- basket
- vessel
- bubbles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To perform homogeneous ecthing with good reproducibility by pressure- reducing an etching bath and eliminating the air bubbles produced through reaction from the solution.
CONSTITUTION: Substrates 101 are put in a basket 15 and a cover 9 is put on a vessel 7. Air is then exhausted through a hole 10. The basket is dipped in the etching solution 401 in an etching bath 16 by means of a handle 13 to etch the Al films. The bubbles of the reaction gas produced at this time are released rapidly into the vessel from the solution by the reduced pressure atmosphere. This prevents the bubbles from stagnating on the substrate surfaces, thereby enabling even etching to be performed. Upon finishing of etching treatment, the basket is transferred into a stopping solution path 18 by the handle 13 to stop etching, after which the inside of the vessel is returned to the atmospheric pressure.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14135977A JPS5473575A (en) | 1977-11-24 | 1977-11-24 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14135977A JPS5473575A (en) | 1977-11-24 | 1977-11-24 | Etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5473575A true JPS5473575A (en) | 1979-06-12 |
Family
ID=15290137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14135977A Pending JPS5473575A (en) | 1977-11-24 | 1977-11-24 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5473575A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60200530A (en) * | 1984-03-26 | 1985-10-11 | Komatsu Denshi Kinzoku Kk | Method for terminating etching of semiconductor wafer |
-
1977
- 1977-11-24 JP JP14135977A patent/JPS5473575A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60200530A (en) * | 1984-03-26 | 1985-10-11 | Komatsu Denshi Kinzoku Kk | Method for terminating etching of semiconductor wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5749234A (en) | Plasma etching method | |
| JPS5753939A (en) | Dry etching method for thin film | |
| JPS56123377A (en) | Plasma cleaning and etching method | |
| JPS5473575A (en) | Etching method | |
| US3657030A (en) | Technique for masking silicon nitride during phosphoric acid etching | |
| JPS54125144A (en) | Treating device using hydrogen fluoride-containing gas | |
| JPS54125143A (en) | Treating device using hydrogen fluoride-containing gas | |
| JPS572585A (en) | Forming method for aluminum electrode | |
| JPS57200569A (en) | Apparatus for treating surface with gas decomposed by light | |
| JPS5469090A (en) | Manufacture of semiconductor device | |
| JPS5298475A (en) | Plasma treating apparatus | |
| JPS5477573A (en) | Operating method of plasma treating apparatus | |
| JPS5449071A (en) | Processing method by aqueous solution of photo resist layer | |
| JPS5747800A (en) | Etching method for crystal substrate | |
| JPS57155381A (en) | Wet etching method | |
| JPS57120672A (en) | Plasma etching method | |
| JPS563680A (en) | Etching method | |
| JPS522275A (en) | Device of forming semiconductor substrates | |
| JPS5477574A (en) | Plasma treating apparatus | |
| JPS5552224A (en) | Sputter etching method | |
| JPS5376758A (en) | Plasma etching method | |
| JPS5569266A (en) | Selective adhering method of metal | |
| JPS5441A (en) | Coating method | |
| JPS5544574A (en) | Electroplating pretreating method of inside surface of metal pipe | |
| JPS6417430A (en) | Etching method |