JPS57155381A - Wet etching method - Google Patents

Wet etching method

Info

Publication number
JPS57155381A
JPS57155381A JP4144081A JP4144081A JPS57155381A JP S57155381 A JPS57155381 A JP S57155381A JP 4144081 A JP4144081 A JP 4144081A JP 4144081 A JP4144081 A JP 4144081A JP S57155381 A JPS57155381 A JP S57155381A
Authority
JP
Japan
Prior art keywords
resist film
etching
film
pattern
minute
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4144081A
Other languages
Japanese (ja)
Inventor
Yoshikazu Obayashi
Hideo Kotani
Shinichi Sato
Kazuo Mizuguchi
Masahiko Denda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4144081A priority Critical patent/JPS57155381A/en
Publication of JPS57155381A publication Critical patent/JPS57155381A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To enable to etch precisely a minute pattern, by activating the resist film with alcoholic gas plasma before immersing it in an etching liquid when wet-etching the insulation film on the semiconductor substrate using the resist film.
CONSTITUTION: A insulation film 2 is formed in the principal face of a semiconductor substrate 1 and covered with a resist film 3 having a window 3a. Then, the surface activation of the resist film 3 is performed by exposing to alcoholic gas plasma. Differently from the surface activation which is performed by immersion in the surface activating agent the resist film is formed by the positive type resist agent which forms easily a minute pattern. Also, by performing wet-etching, immersing the resist film in the etching liquid 5 after the surface activating treatment, the bubble does not generate even at the minute window part and the precise etching treatment can be done after the pattern.
COPYRIGHT: (C)1982,JPO&Japio
JP4144081A 1981-03-19 1981-03-19 Wet etching method Pending JPS57155381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4144081A JPS57155381A (en) 1981-03-19 1981-03-19 Wet etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4144081A JPS57155381A (en) 1981-03-19 1981-03-19 Wet etching method

Publications (1)

Publication Number Publication Date
JPS57155381A true JPS57155381A (en) 1982-09-25

Family

ID=12608426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4144081A Pending JPS57155381A (en) 1981-03-19 1981-03-19 Wet etching method

Country Status (1)

Country Link
JP (1) JPS57155381A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0304068A2 (en) * 1987-08-19 1989-02-22 Fujitsu Limited Removing resist layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0304068A2 (en) * 1987-08-19 1989-02-22 Fujitsu Limited Removing resist layers

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