JPS57124439A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57124439A
JPS57124439A JP1000281A JP1000281A JPS57124439A JP S57124439 A JPS57124439 A JP S57124439A JP 1000281 A JP1000281 A JP 1000281A JP 1000281 A JP1000281 A JP 1000281A JP S57124439 A JPS57124439 A JP S57124439A
Authority
JP
Japan
Prior art keywords
plasma
alcl3
etching
reactive gas
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1000281A
Other languages
Japanese (ja)
Inventor
Nobuaki Yamamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1000281A priority Critical patent/JPS57124439A/en
Publication of JPS57124439A publication Critical patent/JPS57124439A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Abstract

PURPOSE:To reduce the AlCl3 generating from the etching performed on a semiconductor substrate by a method wherein, after the Al or its alloy layer has been etched using gas plasma containing chlorine, an after processing is performed on the semiconductor substrate or an etching device using a reactive gas plasma containing fluorine. CONSTITUTION:A photoresist pattern 3 is formed on the semicoductor substrate 1 whereon an Al film 2 was coated, the entire substrate is placed in a plasma etching device and exposed to the plasma 5 using reactive gas containing Cl atom. The AlCl3 6 generated at this time is adhered to a wafer, but after an etching has been finished, the above is exposed to a plasma 8 in the reactive gas containing fluoric atoms, and the AlCl3 6 is converted to AlF3 7. As Al is different from AlCl3and has no water absorbing property, no trouble is caused by the corrosion and the like of the Al.
JP1000281A 1981-01-26 1981-01-26 Manufacture of semiconductor device Pending JPS57124439A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1000281A JPS57124439A (en) 1981-01-26 1981-01-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1000281A JPS57124439A (en) 1981-01-26 1981-01-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57124439A true JPS57124439A (en) 1982-08-03

Family

ID=11738205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1000281A Pending JPS57124439A (en) 1981-01-26 1981-01-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57124439A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63239951A (en) * 1987-03-27 1988-10-05 Sony Corp Etching
JPH02192709A (en) * 1989-01-20 1990-07-30 Matsushita Electric Ind Co Ltd Manufacture of laminated film capacitor
KR100331053B1 (en) * 1994-05-17 2002-06-20 가나이 쓰도무 Plasma processing appartus and plasma processing method
CN108400090A (en) * 2017-12-22 2018-08-14 信利（惠州）智能显示有限公司 Prevent the processing method of Al corruption

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63239951A (en) * 1987-03-27 1988-10-05 Sony Corp Etching
JPH02192709A (en) * 1989-01-20 1990-07-30 Matsushita Electric Ind Co Ltd Manufacture of laminated film capacitor
KR100331053B1 (en) * 1994-05-17 2002-06-20 가나이 쓰도무 Plasma processing appartus and plasma processing method
CN108400090A (en) * 2017-12-22 2018-08-14 信利（惠州）智能显示有限公司 Prevent the processing method of Al corruption

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