TW280005B - Photoresist hardening process of IC - Google Patents

Photoresist hardening process of IC

Info

Publication number
TW280005B
TW280005B TW84113897A TW84113897A TW280005B TW 280005 B TW280005 B TW 280005B TW 84113897 A TW84113897 A TW 84113897A TW 84113897 A TW84113897 A TW 84113897A TW 280005 B TW280005 B TW 280005B
Authority
TW
Taiwan
Prior art keywords
photoresist
metal film
forming
plasma treatment
photoresist pattern
Prior art date
Application number
TW84113897A
Other languages
Chinese (zh)
Inventor
Jia-Shyong Tsay
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to TW84113897A priority Critical patent/TW280005B/en
Application granted granted Critical
Publication of TW280005B publication Critical patent/TW280005B/en

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A method of IC photoresist hardening comprises of: forming metal film on semiconductor wafer; forming one photoresist layer on the above film; forming phtoresist pattern by lithography; baking the above photoresist pattern; putting the semiconductor wafer with the above photoresist pattern in plasma etcher, performing first time plasma treatment which utilizes He/H2 gas and does not etch the above metal film; performing second time plasma treatment in the above plasma etcher, in which the second time plasma treatment etches the above metal film with the above photoresist pattern as etch mask.
TW84113897A 1995-12-26 1995-12-26 Photoresist hardening process of IC TW280005B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW84113897A TW280005B (en) 1995-12-26 1995-12-26 Photoresist hardening process of IC

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW84113897A TW280005B (en) 1995-12-26 1995-12-26 Photoresist hardening process of IC

Publications (1)

Publication Number Publication Date
TW280005B true TW280005B (en) 1996-07-01

Family

ID=51397559

Family Applications (1)

Application Number Title Priority Date Filing Date
TW84113897A TW280005B (en) 1995-12-26 1995-12-26 Photoresist hardening process of IC

Country Status (1)

Country Link
TW (1) TW280005B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688719A (en) * 1996-06-07 1997-11-18 Taiwan Semiconductor Manufacturing Company Ltd Method for plasma hardening of patterned photoresist layers
US6106167A (en) * 1998-09-01 2000-08-22 Industrial Technology Research Institute Apparatus for photolithography process with gas-phase pretreatment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688719A (en) * 1996-06-07 1997-11-18 Taiwan Semiconductor Manufacturing Company Ltd Method for plasma hardening of patterned photoresist layers
US6106167A (en) * 1998-09-01 2000-08-22 Industrial Technology Research Institute Apparatus for photolithography process with gas-phase pretreatment

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