TW280005B - Photoresist hardening process of IC - Google Patents
Photoresist hardening process of ICInfo
- Publication number
- TW280005B TW280005B TW84113897A TW84113897A TW280005B TW 280005 B TW280005 B TW 280005B TW 84113897 A TW84113897 A TW 84113897A TW 84113897 A TW84113897 A TW 84113897A TW 280005 B TW280005 B TW 280005B
- Authority
- TW
- Taiwan
- Prior art keywords
- photoresist
- metal film
- forming
- plasma treatment
- photoresist pattern
- Prior art date
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
A method of IC photoresist hardening comprises of: forming metal film on semiconductor wafer; forming one photoresist layer on the above film; forming phtoresist pattern by lithography; baking the above photoresist pattern; putting the semiconductor wafer with the above photoresist pattern in plasma etcher, performing first time plasma treatment which utilizes He/H2 gas and does not etch the above metal film; performing second time plasma treatment in the above plasma etcher, in which the second time plasma treatment etches the above metal film with the above photoresist pattern as etch mask.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW84113897A TW280005B (en) | 1995-12-26 | 1995-12-26 | Photoresist hardening process of IC |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW84113897A TW280005B (en) | 1995-12-26 | 1995-12-26 | Photoresist hardening process of IC |
Publications (1)
Publication Number | Publication Date |
---|---|
TW280005B true TW280005B (en) | 1996-07-01 |
Family
ID=51397559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW84113897A TW280005B (en) | 1995-12-26 | 1995-12-26 | Photoresist hardening process of IC |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW280005B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5688719A (en) * | 1996-06-07 | 1997-11-18 | Taiwan Semiconductor Manufacturing Company Ltd | Method for plasma hardening of patterned photoresist layers |
US6106167A (en) * | 1998-09-01 | 2000-08-22 | Industrial Technology Research Institute | Apparatus for photolithography process with gas-phase pretreatment |
-
1995
- 1995-12-26 TW TW84113897A patent/TW280005B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5688719A (en) * | 1996-06-07 | 1997-11-18 | Taiwan Semiconductor Manufacturing Company Ltd | Method for plasma hardening of patterned photoresist layers |
US6106167A (en) * | 1998-09-01 | 2000-08-22 | Industrial Technology Research Institute | Apparatus for photolithography process with gas-phase pretreatment |
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Legal Events
Date | Code | Title | Description |
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MK4A | Expiration of patent term of an invention patent |