TW376553B - Method for reducing profile micro-loading during etching of nitride - Google Patents

Method for reducing profile micro-loading during etching of nitride

Info

Publication number
TW376553B
TW376553B TW087113705A TW87113705A TW376553B TW 376553 B TW376553 B TW 376553B TW 087113705 A TW087113705 A TW 087113705A TW 87113705 A TW87113705 A TW 87113705A TW 376553 B TW376553 B TW 376553B
Authority
TW
Taiwan
Prior art keywords
nitride
photoresist layer
during etching
loading during
profile micro
Prior art date
Application number
TW087113705A
Other languages
Chinese (zh)
Inventor
xin-ping Zhu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Application granted granted Critical
Publication of TW376553B publication Critical patent/TW376553B/en

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

A method of compensating for profile micro-loading during etching of a nitride layer is disclosed. The method comprises the steps of: depositing a photoresist layer on said nitride layer; exposing and developing said photoresist layer using a predetermined pattern; descumming said photoresist layer in a reactive ion etching chamber with a mixture of oxygen plasma and argon plasma in order to shrink said photoresist layer; and etching said nitride layer using said photoresist layer as a mask.
TW087113705A 1998-06-18 1998-08-20 Method for reducing profile micro-loading during etching of nitride TW376553B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10015998A 1998-06-18 1998-06-18

Publications (1)

Publication Number Publication Date
TW376553B true TW376553B (en) 1999-12-11

Family

ID=22278382

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087113705A TW376553B (en) 1998-06-18 1998-08-20 Method for reducing profile micro-loading during etching of nitride

Country Status (2)

Country Link
CN (1) CN1103493C (en)
TW (1) TW376553B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100444025C (en) * 2004-07-12 2008-12-17 北京北方微电子基地设备工艺研究中心有限责任公司 Photoetching glue correcting method
JP2010283095A (en) * 2009-06-04 2010-12-16 Hitachi Ltd Manufacturing method for semiconductor device
CN102347208B (en) * 2010-08-05 2013-07-24 上海华虹Nec电子有限公司 Method for reducing loading effect of thin film growth in furnace tube
CN102915922B (en) * 2011-08-03 2015-04-22 中芯国际集成电路制造(北京)有限公司 Method for manufacturing semiconductor devices
CN102768955A (en) * 2012-07-03 2012-11-07 上海华力微电子有限公司 Method for forming low-loading-effect thin film

Also Published As

Publication number Publication date
CN1103493C (en) 2003-03-19
CN1239818A (en) 1999-12-29

Similar Documents

Publication Publication Date Title
WO2004061916B1 (en) Method of forming a low-k dual damascene interconnect structure
TW257875B (en) Method of forming miniature pattern
EP1154468A3 (en) Method of depositing an amorphous carbon layer
JPS5593225A (en) Forming method of minute pattern
TW223704B (en) Method for integrated circuit fabrication including linewidth control during etching
WO2002044812A3 (en) Embedded attenuated phase shift mask and method of making embedded attenuated phase shift mask
TW288169B (en) Integrated arc and polysilicon etching process
TW376553B (en) Method for reducing profile micro-loading during etching of nitride
JPS5656636A (en) Processing method of fine pattern
AU1388497A (en) Three-dimensional etching process
WO2001071795A3 (en) Method for forming high quality multiple thickness oxide layers by reducing descum induced defects
KR970005675B1 (en) Fabrication method of phase shift mask
TW371327B (en) Phase-shifting mask (PSM) and method for making the same
JPS57130431A (en) Manufacture of semiconductor device
TW324074B (en) Manufacturing method of phase shifting mask
EP1143296A3 (en) Method for forming pattern
TW263600B (en) Process for implementing etching
TW376465B (en) Method for automatically generating assist phase shifting mask (PSM)
TW350988B (en) Manufacturing method of forming metal layout by means of hard mask
TW353786B (en) Method for controlling etch bias in plasma etching
CA1289682C (en) Etching process for fabricating integrated-circuit devices utilizing multilevel resist structure and employing carbon dioxide plasma
TW347484B (en) Phase shift mask and method for manufacturing the same
TW334623B (en) The method by etching bottom of anti-reaction coating layer to control line-width
TW200614364A (en) Dielectric etching method to prevent photoresist damage and bird's beak
TW329044B (en) Method for defining via pattern

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent