TW329044B - Method for defining via pattern - Google Patents

Method for defining via pattern

Info

Publication number
TW329044B
TW329044B TW086105701A TW86105701A TW329044B TW 329044 B TW329044 B TW 329044B TW 086105701 A TW086105701 A TW 086105701A TW 86105701 A TW86105701 A TW 86105701A TW 329044 B TW329044 B TW 329044B
Authority
TW
Taiwan
Prior art keywords
photo resist
layer
hardmask
resist layer
dielectric layer
Prior art date
Application number
TW086105701A
Other languages
Chinese (zh)
Inventor
Jenn-Hwa Yu
Shiun-Ming Jang
Jau-Cherng Chen
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW086105701A priority Critical patent/TW329044B/en
Application granted granted Critical
Publication of TW329044B publication Critical patent/TW329044B/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A method for defining via pattern comprises the following steps: - providing a substrate with at least one MOS on it and a dielectric layer being formed nakedly on the MOS; - forming a hardmask on the surface of the dielectric layer; - spreading a photo resist layer on the hard mask; - defining the pattern of the photo resist layer and removing the hardmask formed by the photo resist layer to form an opening for the dielectric layer; - using the hardmask and the photo resist layer as a mask and removing simultaneously the photo resist layer and the dielectric layer to form via and to form a polymer layer on the surface of the hardmask; - and removing the polymer layer to obtain a hard mask.
TW086105701A 1997-04-30 1997-04-30 Method for defining via pattern TW329044B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086105701A TW329044B (en) 1997-04-30 1997-04-30 Method for defining via pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086105701A TW329044B (en) 1997-04-30 1997-04-30 Method for defining via pattern

Publications (1)

Publication Number Publication Date
TW329044B true TW329044B (en) 1998-04-01

Family

ID=58262490

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086105701A TW329044B (en) 1997-04-30 1997-04-30 Method for defining via pattern

Country Status (1)

Country Link
TW (1) TW329044B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7452821B2 (en) 2001-06-08 2008-11-18 Infineon Technologies Ag Method for the formation of contact holes for a number of contact regions for components integrated in a substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7452821B2 (en) 2001-06-08 2008-11-18 Infineon Technologies Ag Method for the formation of contact holes for a number of contact regions for components integrated in a substrate

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