TW263600B - Process for implementing etching - Google Patents

Process for implementing etching

Info

Publication number
TW263600B
TW263600B TW84105706A TW84105706A TW263600B TW 263600 B TW263600 B TW 263600B TW 84105706 A TW84105706 A TW 84105706A TW 84105706 A TW84105706 A TW 84105706A TW 263600 B TW263600 B TW 263600B
Authority
TW
Taiwan
Prior art keywords
implementing
layer
photoresist layer
etching
mask
Prior art date
Application number
TW84105706A
Other languages
Chinese (zh)
Inventor
Ming-Tzong Liou
Tzong-Yuan Horng
Wen-Jinq Tsay
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW84105706A priority Critical patent/TW263600B/en
Application granted granted Critical
Publication of TW263600B publication Critical patent/TW263600B/en

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A process of implementing etching with photoresist as mask, that is applicable to form semiconductor material with at least one etched layer, comprises the steps of: covering photoresist layer on the above etched layer; aligning mask with predetermined pattern, and implementing exposure to the above photoresist layer; implementing developing the above photoresist layer; implementing baking to the above photoresist layer; and with the above photoresist layer as mask, implementing etching to the above etched layer; It features that implementing ion implantation to the above photoresist layer is done before implementing etching to the above etched layer.
TW84105706A 1995-06-06 1995-06-06 Process for implementing etching TW263600B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW84105706A TW263600B (en) 1995-06-06 1995-06-06 Process for implementing etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW84105706A TW263600B (en) 1995-06-06 1995-06-06 Process for implementing etching

Publications (1)

Publication Number Publication Date
TW263600B true TW263600B (en) 1995-11-21

Family

ID=51402039

Family Applications (1)

Application Number Title Priority Date Filing Date
TW84105706A TW263600B (en) 1995-06-06 1995-06-06 Process for implementing etching

Country Status (1)

Country Link
TW (1) TW263600B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202016104198U1 (en) 2016-07-29 2016-08-11 E-Lead Electronic Co., Ltd. Car radio with removable panel

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202016104198U1 (en) 2016-07-29 2016-08-11 E-Lead Electronic Co., Ltd. Car radio with removable panel

Similar Documents

Publication Publication Date Title
EP0810475A3 (en) Pattern exposing method using phase shift and mask used therefor
JPS5656636A (en) Processing method of fine pattern
WO1998002913A3 (en) Method of forming a gate electrode for an igfet
TW362237B (en) Method for fabricating phase shift mask by controlling an exposure dose
EP0779556A3 (en) Method of fabricating a semiconductor device
TW263600B (en) Process for implementing etching
JPS5339075A (en) Step and repeat exposure method of masks
JPS6464220A (en) Forming method for resist pattern
TW371327B (en) Phase-shifting mask (PSM) and method for making the same
JPS6488546A (en) Method for exposing thick film resist
JPS54141573A (en) Mask for exposure
KR960008498B1 (en) Sensitive film pattern forming method
TW373270B (en) Method for forming impurity junction regions of semiconductor device
JPS645019A (en) Manufacture of semiconductor device
KR19980037280A (en) Photoresist pattern formation method
JPS57139921A (en) Manufacture of semiconductor device
KR970003453A (en) Formation of ion implantation mask
TW376465B (en) Method for automatically generating assist phase shifting mask (PSM)
KR970002448A (en) Mask film treatment method for etching metal film of semiconductor device
KR970013015A (en) How to form the ion implantation mask
JPS56107554A (en) Formation of pattern
TW280005B (en) Photoresist hardening process of IC
TW374215B (en) Method for etching a metal layer
JPS5711344A (en) Dry developing method
JPS57187937A (en) Pattern formation of semiconductor device