TW374853B - Dry etching method of thin film and method for manufacturing thin film semiconductor device - Google Patents

Dry etching method of thin film and method for manufacturing thin film semiconductor device

Info

Publication number
TW374853B
TW374853B TW087112766A TW87112766A TW374853B TW 374853 B TW374853 B TW 374853B TW 087112766 A TW087112766 A TW 087112766A TW 87112766 A TW87112766 A TW 87112766A TW 374853 B TW374853 B TW 374853B
Authority
TW
Taiwan
Prior art keywords
thin film
etching
semiconductor device
dry etching
etching method
Prior art date
Application number
TW087112766A
Other languages
Chinese (zh)
Inventor
Noriyuki Hirata
Mitsuru Shibata
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW374853B publication Critical patent/TW374853B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)

Abstract

A dry etching method of a thin film comprising the steps of, forming a resist pattern on a thin film, performing a first etching wherein the thin film is selectively dry-etched under a first etching condition using the resist pattern as a mask, and performing a second etching wherein the thin film is selectively dry-etched under a second etching condition using the resist pattern as a mask, the second etching condition differing from the first etching condition, wherein changing from the first etching step to the second etching step is performed before the selective etching of the thin film is accomplished.
TW087112766A 1997-08-04 1998-08-03 Dry etching method of thin film and method for manufacturing thin film semiconductor device TW374853B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20909697 1997-08-04

Publications (1)

Publication Number Publication Date
TW374853B true TW374853B (en) 1999-11-21

Family

ID=16567228

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087112766A TW374853B (en) 1997-08-04 1998-08-03 Dry etching method of thin film and method for manufacturing thin film semiconductor device

Country Status (3)

Country Link
US (1) US6071821A (en)
KR (1) KR100280172B1 (en)
TW (1) TW374853B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8546271B2 (en) 2007-09-24 2013-10-01 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001035808A (en) * 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd Wiring and its creating method, semiconductor device having this wiring, and dry-etching method therefor
US6712983B2 (en) * 2001-04-12 2004-03-30 Memsic, Inc. Method of etching a deep trench in a substrate and method of fabricating on-chip devices and micro-machined structures using the same
TWI405242B (en) * 2004-04-28 2013-08-11 Semiconductor Energy Lab Wiring over substrate, semiconductor device, and methods for manufacturing thereof
KR101538167B1 (en) 2007-08-27 2015-07-20 미츠비시 마테리알 가부시키가이샤 Method of packing silicon and packing body
JP2012089805A (en) * 2010-10-22 2012-05-10 Toshiba Corp Etching device and etching method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2214870B (en) * 1988-02-20 1991-09-11 Stc Plc Plasma etching process
JP2666768B2 (en) * 1995-04-27 1997-10-22 日本電気株式会社 Dry etching method and apparatus
US5783496A (en) * 1996-03-29 1998-07-21 Lam Research Corporation Methods and apparatus for etching self-aligned contacts

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8546271B2 (en) 2007-09-24 2013-10-01 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
US9117661B2 (en) 2007-09-24 2015-08-25 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes

Also Published As

Publication number Publication date
US6071821A (en) 2000-06-06
KR100280172B1 (en) 2001-06-01
KR19990023348A (en) 1999-03-25

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees