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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW88118298ApriorityCriticalpatent/TW429536B/en
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Publication of TW429536BpublicationCriticalpatent/TW429536B/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Drying Of Semiconductors
(AREA)
Abstract
A control method for critical dimension can be applied in the integrated circuit process for forming contact opening in the dielectric. The method includes the following steps: forming a hard mask on the substrate covered with dielectric and forming a photoresist on the hard mask; defining the photoresist to have specific pattern, and the photoresist after definition exposing the hard mask in the contact area; conducting the first etching process to remove the exposed hard mask layer in the contact area and exposing the dielectric in the contact area; conducting the second etching process to remove the exposed dielectric for forming the contact opening.
TW88118298A1999-10-221999-10-22Control method for critical dimension
TW429536B
(en)