TW360939B - Method for forming capacitor in semiconductor device - Google Patents

Abstract

A method for forming a capacitor in a semiconductor device, comprises the following steps: forming a first dielectric layer on a semiconductor substrate, forming a first contact hole on a first dielectric layer, forming a first conductive layer over the whole surface, forming a photoresist layer on the first conductive layer, removing the portion on the first conductive layer that is not covered by the photoresist layer, removing the photoresist layer, forming a second dielectric layer on the first dielectric layer and the first conductive layer, forming a third dielectric layer on the second dielectric layer, forming a second contact hole on the second dielectric layer and the third dielectric layer, forming a plug in the contact hole, forming a fourth dielectric layer over the whole surface, forming a third contact hole on the fourth dielectric layer, forming a second conductive layer over the whole surface, forming a third contact hole on the fourth dielectric layer, forming a second conductive layer over the whole surface, forming a fifth dielectric layer over the whole surface, etching back the fifth dielectric layer and a portion of the second conductive layer, removing the fifth dielectric layer, forming a sixth dielectric layer over the whole surface, and forming a third conductive layer on the sixth dielectric layer.