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Application filed by Vanguard Int Semiconduct CorpfiledCriticalVanguard Int Semiconduct Corp
Priority to TW85102935ApriorityCriticalpatent/TW290716B/en
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Publication of TW290716BpublicationCriticalpatent/TW290716B/en
A method of making capacitor, which is formed on semiconductor substrate, comprises the following steps: depositing first polysilicon on the semiconductor substrate; defining photoresist pattern and forming on the first polysilicon; etching the first polysilicon, and on near side forming polymer; removing photoresist; etching back the first polysilicon; depositing dielectric on the first polysilicon surface; depositing second polysilicon on the dielectric layer.
TW85102935A1996-03-111996-03-11Method of making capacitor by etching technique
TW290716B
(en)