TW290716B - Method of making capacitor by etching technique - Google Patents

Method of making capacitor by etching technique

Info

Publication number
TW290716B
TW290716B TW85102935A TW85102935A TW290716B TW 290716 B TW290716 B TW 290716B TW 85102935 A TW85102935 A TW 85102935A TW 85102935 A TW85102935 A TW 85102935A TW 290716 B TW290716 B TW 290716B
Authority
TW
Taiwan
Prior art keywords
polysilicon
making capacitor
etching technique
depositing
semiconductor substrate
Prior art date
Application number
TW85102935A
Other languages
Chinese (zh)
Inventor
You-Jiunn Her
Meng-Jau Cherng
Pey-Wenn Lii
Shiuh-Lii Jeng
Yuh-Hwa Hwang
Shing-Huang Wu
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW85102935A priority Critical patent/TW290716B/en
Application granted granted Critical
Publication of TW290716B publication Critical patent/TW290716B/en

Links

Abstract

A method of making capacitor, which is formed on semiconductor substrate, comprises the following steps: depositing first polysilicon on the semiconductor substrate; defining photoresist pattern and forming on the first polysilicon; etching the first polysilicon, and on near side forming polymer; removing photoresist; etching back the first polysilicon; depositing dielectric on the first polysilicon surface; depositing second polysilicon on the dielectric layer.
TW85102935A 1996-03-11 1996-03-11 Method of making capacitor by etching technique TW290716B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW85102935A TW290716B (en) 1996-03-11 1996-03-11 Method of making capacitor by etching technique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW85102935A TW290716B (en) 1996-03-11 1996-03-11 Method of making capacitor by etching technique

Publications (1)

Publication Number Publication Date
TW290716B true TW290716B (en) 1996-11-11

Family

ID=51398280

Family Applications (1)

Application Number Title Priority Date Filing Date
TW85102935A TW290716B (en) 1996-03-11 1996-03-11 Method of making capacitor by etching technique

Country Status (1)

Country Link
TW (1) TW290716B (en)

Similar Documents

Publication Publication Date Title
EP0887849A3 (en) Method for fabricating capacitor for semiconductor device
KR970013074A (en) Planarization method of semiconductor device and device isolation method using same
TW353792B (en) A capacitor and method for making a capacitor
TW377453B (en) Production of electronic device
WO2002029865A3 (en) Method of manufacturing a semiconductor component and semiconductor component thereof
TW346664B (en) Mixed-mode IC separated spacer structure and process for producing the same
TW290716B (en) Method of making capacitor by etching technique
TW324110B (en) Method for fabrication metal wire of semiconductor device
TW325583B (en) Method of etching a polysilicon layer
TW344102B (en) Additive metallization process and structure
TW360939B (en) Method for forming capacitor in semiconductor device
KR980005592A (en) Self-aligned contact hole forming method
TW347580B (en) Process for forming a gate
EP0366013A3 (en) Selective dielectric deposition on horizontal features of an integrated circuit subassembly
TW430924B (en) Method for forming contact hole in semiconductor device
TW340252B (en) Process of forming a via hole
TW255048B (en) Planarization method between metal layers
TW347569B (en) Process for producing lower electrode of a capacitance
TW349256B (en) Process for producing stack capacitor having horizontal finger grooves
TW278250B (en) Fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitor
KR970009613B1 (en) Multi-level metalizing method of semiconductor device
KR960011815B1 (en) Method of making a capacitor in semiconductor device
TW377464B (en) Method of increasing the surface area of capacitor construct
TW328634B (en) The structure and manufacturing method for capacitor of DRAM
TW280003B (en) Fabrication method of IC metal structure