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A manufacturing method for capacitor of DRAM includes the following steps: (a) Provide a semiconductor substrate; (b) Form 1st dielectric layer on substrate; (c) Form barrier layer on 1st dielectric layer; (d) Form sacrificial layer on barrier layer; (e) Form 1st polysilicon layer on sacrificial layer, and define the pattern of 1st polysilicon to form bottom electrode of capacitor; (f) Proceed 1st wet etching step to remove sacrificial layer; (g) Form capacitor dielectric layer on bottom electrode; (h) Form 2nd polysilicon layer on capacitor dielectric, and define the pattern of 2nd polysilicon to form upper electrode of capacitor.
TW086113092A1997-09-101997-09-10The structure and manufacturing method for capacitor of DRAM
TW328634B
(en)