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Application filed by Mosel Vitelic IncfiledCriticalMosel Vitelic Inc
Priority to TW085103641ApriorityCriticalpatent/TW353779B/en
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Publication of TW353779BpublicationCriticalpatent/TW353779B/en
A method of producing a semiconductor capacitor, which comprises: forming an oxide layer on a silicon substrate, depositing TEOS thereon, thereby constituting a double-layer rough oxide layer structure; depositing a polysilicon layer as the first electrode of a capacitor; removing the double-layer rough oxide layer thereby exposing the bottom rough surface of the first electrode initially contacting therewith; depositing an insulation layer as the dielectric layer of the capacitor; and further depositing a polysilicon as the second electrode of the capacitor.
TW085103641A1996-03-271996-03-27Method of producing semiconductor capacitor and structure thereof
TW353779B
(en)