TW360940B - Method of manufacturing a capacitor for DRAM capacitor with - Google Patents
Method of manufacturing a capacitor for DRAM capacitor withInfo
- Publication number
- TW360940B TW360940B TW086103883A TW86103883A TW360940B TW 360940 B TW360940 B TW 360940B TW 086103883 A TW086103883 A TW 086103883A TW 86103883 A TW86103883 A TW 86103883A TW 360940 B TW360940 B TW 360940B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- forming
- polysilicon layer
- capacitor
- polysilicon
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
A method of manufacturing a capacitor for drams, comprises providing a substrate formed with at least a field oxide, a gate, an exposed source/drain region and a first insulation layer covering the gate thereon, the first and second polysilicon layer and forming a first polysilicon layer covering the substrate and electrically connecting to the exposed source/drain region, defining a first polysilicon layer, forming a plurality of openings and filling the openings with a liquid phase deposition oxide layer, sequentially forming a second polysilicon layer and a hemi-spherical grain layer covering the substrate, forming a second insulation layer, removing the exposed hemi-spherical grain layer and the second polysilicon layer, removing the liquid phase deposition oxide layer and the second insulation layer, forming a dielectric layer on the first and second polysilicon layer and the exposed surface of the hemi-spherical grain layer, and forming a third polysilicon layer on the surface of the dielectric film layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086103883A TW360940B (en) | 1997-03-26 | 1997-03-26 | Method of manufacturing a capacitor for DRAM capacitor with |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086103883A TW360940B (en) | 1997-03-26 | 1997-03-26 | Method of manufacturing a capacitor for DRAM capacitor with |
Publications (1)
Publication Number | Publication Date |
---|---|
TW360940B true TW360940B (en) | 1999-06-11 |
Family
ID=57940723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086103883A TW360940B (en) | 1997-03-26 | 1997-03-26 | Method of manufacturing a capacitor for DRAM capacitor with |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW360940B (en) |
-
1997
- 1997-03-26 TW TW086103883A patent/TW360940B/en not_active IP Right Cessation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5061650A (en) | Method for formation of a stacked capacitor | |
US5774327A (en) | High dielectric capacitors | |
TW359896B (en) | Dual deposition methods for forming contact metallizations, capacitors, and memory devices | |
KR960030423A (en) | Semiconductor memory device and manufacturing method thereof | |
US5637527A (en) | Method of forming a charge-storage electrode of semiconductor device | |
JPH04320369A (en) | Highly integrated semiconductor memory device and manufacture thereof | |
KR940027149A (en) | Semiconductor Memory and Manufacturing Method Thereof | |
US5457063A (en) | Method for fabricating a capacitor for a dynamic random access memory cell | |
TW345714B (en) | Capacitive structure of DRAM and process for producing the same | |
US5451539A (en) | Method for fabricating capacitor of semiconductor memory device | |
US5366930A (en) | Method for making highly integrated semiconductor connecting device using a conductive plug | |
TW360940B (en) | Method of manufacturing a capacitor for DRAM capacitor with | |
JP2620529B2 (en) | Manufacturing method of Dealam capacitor | |
TW372364B (en) | Manufacturing method for capacitors of dynamic random access memory | |
TW364205B (en) | Method for producing DRAM capacitor | |
JPH0379072A (en) | Semiconductor memory device and manufacturing method | |
KR950011982B1 (en) | Contact structure having conductive material pad and forming method thereof | |
TW337038B (en) | DRAM capacitor and process for producing the same | |
TW353779B (en) | Method of producing semiconductor capacitor and structure thereof | |
TW367542B (en) | Manufacturing method for dynamic random access memory capacitors | |
KR930012122B1 (en) | Method of fabricating a capacitor for semiconductor memory device | |
TW329549B (en) | The manufacturing method for increasing capacitance of capacitor in DRAM | |
TW288163B (en) | Method of forming dynamic random access memory with multi-pillar-shaped capacitor | |
KR960016481B1 (en) | Method for manufacturing a memory cell | |
KR970024141A (en) | Capacitor Manufacturing Method of Semiconductor Device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |