TW360940B - Method of manufacturing a capacitor for DRAM capacitor with - Google Patents

Method of manufacturing a capacitor for DRAM capacitor with

Info

Publication number
TW360940B
TW360940B TW086103883A TW86103883A TW360940B TW 360940 B TW360940 B TW 360940B TW 086103883 A TW086103883 A TW 086103883A TW 86103883 A TW86103883 A TW 86103883A TW 360940 B TW360940 B TW 360940B
Authority
TW
Taiwan
Prior art keywords
layer
forming
polysilicon layer
capacitor
polysilicon
Prior art date
Application number
TW086103883A
Other languages
Chinese (zh)
Inventor
Shye-Lin Wu
Original Assignee
Powerchip Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Powerchip Semiconductor Corp filed Critical Powerchip Semiconductor Corp
Priority to TW086103883A priority Critical patent/TW360940B/en
Application granted granted Critical
Publication of TW360940B publication Critical patent/TW360940B/en

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  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

A method of manufacturing a capacitor for drams, comprises providing a substrate formed with at least a field oxide, a gate, an exposed source/drain region and a first insulation layer covering the gate thereon, the first and second polysilicon layer and forming a first polysilicon layer covering the substrate and electrically connecting to the exposed source/drain region, defining a first polysilicon layer, forming a plurality of openings and filling the openings with a liquid phase deposition oxide layer, sequentially forming a second polysilicon layer and a hemi-spherical grain layer covering the substrate, forming a second insulation layer, removing the exposed hemi-spherical grain layer and the second polysilicon layer, removing the liquid phase deposition oxide layer and the second insulation layer, forming a dielectric layer on the first and second polysilicon layer and the exposed surface of the hemi-spherical grain layer, and forming a third polysilicon layer on the surface of the dielectric film layer.
TW086103883A 1997-03-26 1997-03-26 Method of manufacturing a capacitor for DRAM capacitor with TW360940B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086103883A TW360940B (en) 1997-03-26 1997-03-26 Method of manufacturing a capacitor for DRAM capacitor with

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086103883A TW360940B (en) 1997-03-26 1997-03-26 Method of manufacturing a capacitor for DRAM capacitor with

Publications (1)

Publication Number Publication Date
TW360940B true TW360940B (en) 1999-06-11

Family

ID=57940723

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103883A TW360940B (en) 1997-03-26 1997-03-26 Method of manufacturing a capacitor for DRAM capacitor with

Country Status (1)

Country Link
TW (1) TW360940B (en)

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees