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Application filed by Powerchip Semiconductor CorpfiledCriticalPowerchip Semiconductor Corp
Priority to TW086103882ApriorityCriticalpatent/TW337038B/en
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Publication of TW337038BpublicationCriticalpatent/TW337038B/en
A process for producing a DRAM capacitor, which at least comprises the following steps: (a) providing a substrate formed with at least a field oxide layer, a gate, and source/drain regions thereon; (b) forming a first insulation layer covering the substrate; (c) forming a second insulation layer on the surface of the first insulation layer; (d) defining the second and first insulation layers to form a storage electrode contact opening at a predetermined position to expose one of the source/drain regions; (e) forming a first polysilicon layer covering the storage electrode contact opening; (f) defining the first polysilicon layer; (g) forming a Hemispherical Grain Silicon covering the substrate; (h) removing the second insulation layer, and simultaneously etching the Hemispherical Grain Silicon and the first polysilicon layer to form a coral-like storage electrode; (I) forming a dielectric membrane layer on the exposed surface of the coral-like storage electrode; and (j) forming a second polysilicon layer on the surface of the dielectric layer.
TW086103882A1997-03-261997-03-26DRAM capacitor and process for producing the same
TW337038B
(en)
Capacitor structures, DRAM cell structures, and integrated circuitry, and methods of forming capacitor structures, integrated circuitry and DRAM cell structures