TW278250B - Fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitor - Google Patents

Fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitor

Info

Publication number
TW278250B
TW278250B TW84112854A TW84112854A TW278250B TW 278250 B TW278250 B TW 278250B TW 84112854 A TW84112854 A TW 84112854A TW 84112854 A TW84112854 A TW 84112854A TW 278250 B TW278250 B TW 278250B
Authority
TW
Taiwan
Prior art keywords
voltage gate
gate oxide
high voltage
fabrication method
polysilicon layer
Prior art date
Application number
TW84112854A
Other languages
Chinese (zh)
Inventor
Jeng-Jyh Gong
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW84112854A priority Critical patent/TW278250B/en
Application granted granted Critical
Publication of TW278250B publication Critical patent/TW278250B/en

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitor comprises the steps of: forming one high voltage gate oxide on one initialization processed semiconductor substrate which consists of one semiconductor substrate, one well formed in the semiconductor substrate, and multiple field oxide formed on the well; depositing one first polysilicon layer; forming multiple high voltage gate by define the high voltage gate pattern with mask, and removing the undefined portion of the first polysilicon layer; removing the high voltage gate oxide located outside the high voltage gate; forming one low voltage gate oxide; depositing one second polysilicon layer; forming multiple low voltage gate by defining the low voltage gate pattern by mask, and removing the undefined portion of the second polysilicon layer.
TW84112854A 1995-12-01 1995-12-01 Fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitor TW278250B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW84112854A TW278250B (en) 1995-12-01 1995-12-01 Fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW84112854A TW278250B (en) 1995-12-01 1995-12-01 Fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitor

Publications (1)

Publication Number Publication Date
TW278250B true TW278250B (en) 1996-06-11

Family

ID=51397464

Family Applications (1)

Application Number Title Priority Date Filing Date
TW84112854A TW278250B (en) 1995-12-01 1995-12-01 Fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitor

Country Status (1)

Country Link
TW (1) TW278250B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2543266A1 (en) 2011-07-07 2013-01-09 Sin Young Hong Ltd. Adjustable shaping brassiere

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2543266A1 (en) 2011-07-07 2013-01-09 Sin Young Hong Ltd. Adjustable shaping brassiere

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