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Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
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Abstract
A method of producing different gate oxides for a semiconductor substrate, the method comprising the following steps: sequentially forming a first gate oxide, a first conductive layer and a barrier layer on a semiconductor substrate; forming a photoresist layer on a specified position of the barrier layer using a photoresist lithography technique; sequentially etching off the barrier layer, the first conductive layer and the first gate oxide, using the photoresist layer as the mask, thereby forming an exposed face on the semiconductor substrate; removing the photoresist layer; forming a second gate oxide on the exposed surface of the semiconductor substrate; removing the barrier layer on the first conductive layer; and forming a second conductive layer on the first conductive layer and the second gate oxide.
TW084114164A1995-12-301995-12-30Method of producing different gate oxides
TW353785B
(en)