TW281791B - Method of local oxidation of silicon - Google Patents

Method of local oxidation of silicon

Info

Publication number
TW281791B
TW281791B TW83111378A TW83111378A TW281791B TW 281791 B TW281791 B TW 281791B TW 83111378 A TW83111378 A TW 83111378A TW 83111378 A TW83111378 A TW 83111378A TW 281791 B TW281791 B TW 281791B
Authority
TW
Taiwan
Prior art keywords
layer
narrow
forming
wide opening
silicon substrate
Prior art date
Application number
TW83111378A
Other languages
Chinese (zh)
Inventor
Huoo-Tiee Lu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW83111378A priority Critical patent/TW281791B/en
Application granted granted Critical
Publication of TW281791B publication Critical patent/TW281791B/en

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  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

A method of local oxidation of silicon by applying large angle tilt implantation of nitrogen comprises the steps of: forming one pad oxide and one Si3N4 layer in sequence on one silicon substrate; forming one photoresist layer on the Si3N4 layer, and patterning it by lithography to form narrow and wide opening; through the narrow and wide opening etching to remove the Si3N4 layer where is not covered by the photoresist; performing one large angle tilt implantation of nitrogen ion for forming one nitrogen ion doped layer on the silicon substrate in the wide opening, and not forming nitrogen doped layer by the shielding of the photoresist layer and Si3N4 layer on the silicon substrate in the narrow opening; and oxidizing the silicon substrate in the narrow and wide opening to form field oxide, in which the field oxide thickness in the wide opening is equivalent to the one in the narrow opening by inhibition effect of the nitrogen doped layer.
TW83111378A 1994-12-07 1994-12-07 Method of local oxidation of silicon TW281791B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83111378A TW281791B (en) 1994-12-07 1994-12-07 Method of local oxidation of silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83111378A TW281791B (en) 1994-12-07 1994-12-07 Method of local oxidation of silicon

Publications (1)

Publication Number Publication Date
TW281791B true TW281791B (en) 1996-07-21

Family

ID=51397662

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83111378A TW281791B (en) 1994-12-07 1994-12-07 Method of local oxidation of silicon

Country Status (1)

Country Link
TW (1) TW281791B (en)

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