KR960008521B1 - Semiconductor device isolation method - Google Patents

Semiconductor device isolation method Download PDF

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Publication number
KR960008521B1
KR960008521B1 KR93014365A KR930014365A KR960008521B1 KR 960008521 B1 KR960008521 B1 KR 960008521B1 KR 93014365 A KR93014365 A KR 93014365A KR 930014365 A KR930014365 A KR 930014365A KR 960008521 B1 KR960008521 B1 KR 960008521B1
Authority
KR
South Korea
Prior art keywords
insulating layers
forming
trench
etching
region
Prior art date
Application number
KR93014365A
Other languages
Korean (ko)
Other versions
KR950004489A (en
Inventor
Eui-Sam Jung
Yong-Hyuk Yun
Byung-Suk Lee
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR93014365A priority Critical patent/KR960008521B1/en
Publication of KR950004489A publication Critical patent/KR950004489A/en
Application granted granted Critical
Publication of KR960008521B1 publication Critical patent/KR960008521B1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)

Abstract

depositing an insulating layers (20) on the silicon substrate (1) and patterning a cell by photoresist; etching the insulating layers (20) gradiently using the pattern of the cell; forming a trench using the pattern formed by etching the insulating layers (20); increasing the size of the trench by growing up an oxide layer inside the trench and removing that oxide layer; forming a polysilicon layer (9) after forming an insulating layer (8) inside the trench; etching and planarization of the polysilicon (9) into the level of the insulating layers (20) and coating the cell region by photoresisit and patterning a circuit region; forming a field oxide (5) after etching the insulating layers (20) of the circuit region using mask; forming a component region (A) and an isolation region (B) after removing the rest of the insulating layers (20); planarization of the field oxide layer (5).
KR93014365A 1993-07-27 1993-07-27 Semiconductor device isolation method KR960008521B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93014365A KR960008521B1 (en) 1993-07-27 1993-07-27 Semiconductor device isolation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93014365A KR960008521B1 (en) 1993-07-27 1993-07-27 Semiconductor device isolation method

Publications (2)

Publication Number Publication Date
KR950004489A KR950004489A (en) 1995-02-18
KR960008521B1 true KR960008521B1 (en) 1996-06-26

Family

ID=19360190

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93014365A KR960008521B1 (en) 1993-07-27 1993-07-27 Semiconductor device isolation method

Country Status (1)

Country Link
KR (1) KR960008521B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10173052A (en) * 1996-12-13 1998-06-26 Fujitsu Ltd Semiconductor device and its manufacture

Also Published As

Publication number Publication date
KR950004489A (en) 1995-02-18

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