KR960012628B1 - Fabricating method of semiconductor device - Google Patents

Fabricating method of semiconductor device Download PDF

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Publication number
KR960012628B1
KR960012628B1 KR93016779A KR930016779A KR960012628B1 KR 960012628 B1 KR960012628 B1 KR 960012628B1 KR 93016779 A KR93016779 A KR 93016779A KR 930016779 A KR930016779 A KR 930016779A KR 960012628 B1 KR960012628 B1 KR 960012628B1
Authority
KR
South Korea
Prior art keywords
forming
layer
semiconductor device
nitrided
polysilicone
Prior art date
Application number
KR93016779A
Other languages
Korean (ko)
Other versions
KR950007020A (en
Inventor
Seung-Joon Kim
Hae-Sung Park
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR93016779A priority Critical patent/KR960012628B1/en
Publication of KR950007020A publication Critical patent/KR950007020A/en
Application granted granted Critical
Publication of KR960012628B1 publication Critical patent/KR960012628B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The method of fabricating semiconductor device comprises the steps of : forming an oxide film(12) on the surface of a semiconductor substrate(1); forming a stacked oxide film pattern; forming a polysilicone layer(14); forming a nitrided film(15) on the polysilicone layer(14); forming a flattened layer(16) on the nitrided film(15); forming a nitrided film pattern by blanket etching of the flattening layer(16), the nitrided film(15) and the polysilicone layer(14); forming a field oxide film(17) by thermal oxidation of the substrate after removing the flattening layer(16), and removing the nitrided film pattern.
KR93016779A 1993-08-27 1993-08-27 Fabricating method of semiconductor device KR960012628B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93016779A KR960012628B1 (en) 1993-08-27 1993-08-27 Fabricating method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93016779A KR960012628B1 (en) 1993-08-27 1993-08-27 Fabricating method of semiconductor device

Publications (2)

Publication Number Publication Date
KR950007020A KR950007020A (en) 1995-03-21
KR960012628B1 true KR960012628B1 (en) 1996-09-23

Family

ID=19362090

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93016779A KR960012628B1 (en) 1993-08-27 1993-08-27 Fabricating method of semiconductor device

Country Status (1)

Country Link
KR (1) KR960012628B1 (en)

Also Published As

Publication number Publication date
KR950007020A (en) 1995-03-21

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