KR970007829B1 - Fabricating method of semiconductor device - Google Patents

Fabricating method of semiconductor device Download PDF

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Publication number
KR970007829B1
KR970007829B1 KR93028859A KR930028859A KR970007829B1 KR 970007829 B1 KR970007829 B1 KR 970007829B1 KR 93028859 A KR93028859 A KR 93028859A KR 930028859 A KR930028859 A KR 930028859A KR 970007829 B1 KR970007829 B1 KR 970007829B1
Authority
KR
South Korea
Prior art keywords
forming
interlayer
semiconductor device
insulating layer
semiconductor substrate
Prior art date
Application number
KR93028859A
Other languages
Korean (ko)
Other versions
KR950021079A (en
Inventor
Sung-Chol Kim
Original Assignee
Lg Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Semicon Co Ltd filed Critical Lg Semicon Co Ltd
Priority to KR93028859A priority Critical patent/KR970007829B1/en
Publication of KR950021079A publication Critical patent/KR950021079A/en
Application granted granted Critical
Publication of KR970007829B1 publication Critical patent/KR970007829B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Semiconductor manufacturing method comprises the steps of forming a component on a component forming area of a semiconductor substrate having a component forming area and a peripheral area, forming a interlayer insulating layer(4) on the semiconductor substrate, planarizing the semiconductor substrate by forming an interlayer(5) on the interlayer insulating layer(4), coating a photoresist(5) on the interlayer(1), patterning the photoresist(5) via an etching process by using a mask for forming a contact, and forming the contact hall by etching the interlayer(6) and the interlayer insulating layer(4) by using the photoresist pattern(5) as a mask. Thereby, the reliability of the semiconductor device can be improved.
KR93028859A 1993-12-21 1993-12-21 Fabricating method of semiconductor device KR970007829B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93028859A KR970007829B1 (en) 1993-12-21 1993-12-21 Fabricating method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93028859A KR970007829B1 (en) 1993-12-21 1993-12-21 Fabricating method of semiconductor device

Publications (2)

Publication Number Publication Date
KR950021079A KR950021079A (en) 1995-07-26
KR970007829B1 true KR970007829B1 (en) 1997-05-17

Family

ID=19371949

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93028859A KR970007829B1 (en) 1993-12-21 1993-12-21 Fabricating method of semiconductor device

Country Status (1)

Country Link
KR (1) KR970007829B1 (en)

Also Published As

Publication number Publication date
KR950021079A (en) 1995-07-26

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