KR960012575B1 - Metal wire forming method of semiconductor device - Google Patents

Metal wire forming method of semiconductor device Download PDF

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Publication number
KR960012575B1
KR960012575B1 KR93004362A KR930004362A KR960012575B1 KR 960012575 B1 KR960012575 B1 KR 960012575B1 KR 93004362 A KR93004362 A KR 93004362A KR 930004362 A KR930004362 A KR 930004362A KR 960012575 B1 KR960012575 B1 KR 960012575B1
Authority
KR
South Korea
Prior art keywords
semiconductor device
forming method
metal wire
wire forming
forming
Prior art date
Application number
KR93004362A
Other languages
Korean (ko)
Other versions
KR940022702A (en
Inventor
Hye-Dong Kim
Original Assignee
Lg Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Semicon Co Ltd filed Critical Lg Semicon Co Ltd
Priority to KR93004362A priority Critical patent/KR960012575B1/en
Publication of KR940022702A publication Critical patent/KR940022702A/en
Application granted granted Critical
Publication of KR960012575B1 publication Critical patent/KR960012575B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

The method of forming metal wiring of semiconductor device comprises the steps of: defining a metal wiring region by photo masking after forming an insulating film(1) on a semiconductor substrate(7) and depositing photoresist(5); dry etching of the insulating film(1) using the photoresist(5) as mask; and forming a metal wiring by removing the remained photoresist after depositing a first metal(2) and a second metal(3) by sputtering.
KR93004362A 1993-03-20 1993-03-20 Metal wire forming method of semiconductor device KR960012575B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93004362A KR960012575B1 (en) 1993-03-20 1993-03-20 Metal wire forming method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93004362A KR960012575B1 (en) 1993-03-20 1993-03-20 Metal wire forming method of semiconductor device

Publications (2)

Publication Number Publication Date
KR940022702A KR940022702A (en) 1994-10-21
KR960012575B1 true KR960012575B1 (en) 1996-09-23

Family

ID=19352538

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93004362A KR960012575B1 (en) 1993-03-20 1993-03-20 Metal wire forming method of semiconductor device

Country Status (1)

Country Link
KR (1) KR960012575B1 (en)

Also Published As

Publication number Publication date
KR940022702A (en) 1994-10-21

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