KR960009102B1 - Manufacturing method of semiconductor device fuse - Google Patents

Manufacturing method of semiconductor device fuse Download PDF

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Publication number
KR960009102B1
KR960009102B1 KR93004364A KR930004364A KR960009102B1 KR 960009102 B1 KR960009102 B1 KR 960009102B1 KR 93004364 A KR93004364 A KR 93004364A KR 930004364 A KR930004364 A KR 930004364A KR 960009102 B1 KR960009102 B1 KR 960009102B1
Authority
KR
South Korea
Prior art keywords
insulating layer
fuse
manufacturing
semiconductor device
forming
Prior art date
Application number
KR93004364A
Other languages
Korean (ko)
Other versions
KR940022800A (en
Inventor
Hwa-Joo Shin
Original Assignee
Lg Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Semicon Co Ltd filed Critical Lg Semicon Co Ltd
Priority to KR93004364A priority Critical patent/KR960009102B1/en
Publication of KR940022800A publication Critical patent/KR940022800A/en
Application granted granted Critical
Publication of KR960009102B1 publication Critical patent/KR960009102B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

forming a first insulating layer(12) on the semiconductor substrate(11) and forming a first fuse(13) on the first insulating layer(12); forming a second insulating layer(14) on the first insulating layer(12) to cover the first fuse(13); forming a second fuse(15) on the second insulating layer(14); forming a third insulating layer(16) on the second insulating layer(14) to cover the second fuse(15); etching the third insulating layer(16) on the cross region of the first and the second fuse.
KR93004364A 1993-03-20 1993-03-20 Manufacturing method of semiconductor device fuse KR960009102B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93004364A KR960009102B1 (en) 1993-03-20 1993-03-20 Manufacturing method of semiconductor device fuse

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93004364A KR960009102B1 (en) 1993-03-20 1993-03-20 Manufacturing method of semiconductor device fuse

Publications (2)

Publication Number Publication Date
KR940022800A KR940022800A (en) 1994-10-21
KR960009102B1 true KR960009102B1 (en) 1996-07-10

Family

ID=19352540

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93004364A KR960009102B1 (en) 1993-03-20 1993-03-20 Manufacturing method of semiconductor device fuse

Country Status (1)

Country Link
KR (1) KR960009102B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101046229B1 (en) * 2009-03-17 2011-07-04 주식회사 하이닉스반도체 Semiconductor device including a fuse

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101046229B1 (en) * 2009-03-17 2011-07-04 주식회사 하이닉스반도체 Semiconductor device including a fuse

Also Published As

Publication number Publication date
KR940022800A (en) 1994-10-21

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