KR970077196A - METHOD FOR FORMING METAL WIRING IN SEMICONDUCTOR - Google Patents
METHOD FOR FORMING METAL WIRING IN SEMICONDUCTOR Download PDFInfo
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- KR970077196A KR970077196A KR1019960015575A KR19960015575A KR970077196A KR 970077196 A KR970077196 A KR 970077196A KR 1019960015575 A KR1019960015575 A KR 1019960015575A KR 19960015575 A KR19960015575 A KR 19960015575A KR 970077196 A KR970077196 A KR 970077196A
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- film
- forming
- pattern
- metal
- photoresist pattern
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Abstract
실리콘질화막을 반사방지막으로 이용하는 반도체 장치의 금속 배선 형성방법에 곤하여 개시한다. 본 발명은 반도체 기판 상에 실리콘화막을 형성하는 단계와, 상기 실리콘산화막 상에 제1금속막을 형성하는 단계와, 상기 제1금속막상에 실리콘질화막(SiN)으로 반사방지막을 형성하는 단계와, 상기 반사방지막 상에 제1포토레지스트 패턴을 형성하는 단계와, 상기 제1포토지시스트 패턴을 마스크로 상기 반사방지막 및 제1금속막을 식각하여 홀을 갖는 제1반사방지막 패턴 및 제1금속막 패턴을 형성하는 단계와, 상기 제1포토레지스트 패턴을 제거하는 단계와, 상기 기판의 전면에 상기 홀을 매립하도록 실리콘질화막으로 보호막을 형성하는 단계와, 상기 보호막 상에 제2포토레지스트 패턴을 형성하는 단계와, 상기 제2포토레지스트 패턴을 마스크로 상기 보호막 및 제1반사방지막 패턴을 순차적으로 식각하여 보호막 패턴 및 제2반사방지막 패턴을 형성하는 단계와, 상기 제2포토레지스트 패턴을 제거하는 단계를 포함하는 것을 특징으로 하는 반도체 장치의 금속 배선 형성방법을 제공한다. 본 발명은 반사방지막을 실리콘질화막으로 형성하고, 와이어 본딩을 위한 반사방지막의 식각을 보호막의 식각시 순차적으로 식각하여 공정을 단순하게 할 수 있다.And a method for forming a metal wiring of a semiconductor device using a silicon nitride film as an antireflection film. The present invention provides a method of manufacturing a semiconductor device, comprising: forming a siliconized film on a semiconductor substrate; forming a first metal film on the silicon oxide film; forming an antireflection film on the first metal film with a silicon nitride film (SiN) Forming a first photoresist pattern on the antireflection film; etching the antireflection film and the first metal film using the first photoresist pattern as a mask to form a first antireflection film pattern having holes and a first metal film pattern, Forming a protective film with a silicon nitride film on the entire surface of the substrate so as to fill the hole, forming a second photoresist pattern on the protective film, And forming a protective film pattern and a second anti-reflective film pattern by sequentially etching the protective film and the first anti-reflective film pattern using the second photoresist pattern as a mask It provides the steps and, the second photoresist to form metal wiring of a semiconductor device characterized in that it comprises a step of removing the pattern. The present invention can simplify the process by forming the antireflection film as a silicon nitride film and sequentially etching the antireflection film for wire bonding at the time of etching the protective film.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제5도 내지 제7도는 본 발명에 의한 반도체 장치의 금속 배선 형성방법을 설명하기 위하여 도시한 단면도들이다.5 to 7 are cross-sectional views illustrating a method of forming a metal wiring of a semiconductor device according to the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960015575A KR970077196A (en) | 1996-05-11 | 1996-05-11 | METHOD FOR FORMING METAL WIRING IN SEMICONDUCTOR |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960015575A KR970077196A (en) | 1996-05-11 | 1996-05-11 | METHOD FOR FORMING METAL WIRING IN SEMICONDUCTOR |
Publications (1)
Publication Number | Publication Date |
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KR970077196A true KR970077196A (en) | 1997-12-12 |
Family
ID=66220013
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960015575A KR970077196A (en) | 1996-05-11 | 1996-05-11 | METHOD FOR FORMING METAL WIRING IN SEMICONDUCTOR |
Country Status (1)
Country | Link |
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KR (1) | KR970077196A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100619398B1 (en) * | 2003-12-26 | 2006-09-11 | 동부일렉트로닉스 주식회사 | Method of fabricating reticle with antireflective coating |
-
1996
- 1996-05-11 KR KR1019960015575A patent/KR970077196A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100619398B1 (en) * | 2003-12-26 | 2006-09-11 | 동부일렉트로닉스 주식회사 | Method of fabricating reticle with antireflective coating |
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