KR970077096A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device Download PDF

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Publication number
KR970077096A
KR970077096A KR1019960014208A KR19960014208A KR970077096A KR 970077096 A KR970077096 A KR 970077096A KR 1019960014208 A KR1019960014208 A KR 1019960014208A KR 19960014208 A KR19960014208 A KR 19960014208A KR 970077096 A KR970077096 A KR 970077096A
Authority
KR
South Korea
Prior art keywords
photoresist layer
semiconductor device
metal layer
manufacturing
manufacturing semiconductor
Prior art date
Application number
KR1019960014208A
Other languages
Korean (ko)
Inventor
유진산
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960014208A priority Critical patent/KR970077096A/en
Publication of KR970077096A publication Critical patent/KR970077096A/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 반도체 소자의 제조방법을 제공하는 것으로, 금속층 패터닝시 감광막을 반사방지막으로 사용하여 낮은 반사도에 의한 노치효과를 최소할 수 있음은 물론 패터닝 하고자 하는 금속층상에 감광막의 형성 및 제거가 용이하여 재작업을 할 수 있는 효과가 있다.The present invention provides a method of manufacturing a semiconductor device, which uses a photoresist film as an antireflection film when patterning a metal layer, minimizes the notch effect due to low reflectivity, facilitates formation and removal of a photoresist film on a metal layer to be patterned There is an effect that rework can be done.

Description

반도체 소자의 제조방법Method of manufacturing semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2A 내지 제2D도는 본 발명에 따른 반도체 소자의 제조방법을 설명하기 위한 소자의 단면도.2A to 2D are sectional views of a device for explaining a method of manufacturing a semiconductor device according to the present invention.

Claims (3)

반도체 소자의 제조방법에 있어서, 실리콘기판상에 금속층 및 제1감광막을 순차적으로 형성한 후 열처리하는 단계와, 상기 단계로부터 상기 제1감광막상에 제2감광막을 형성한 후 상기 제2감광막을 패터닝하는 단계와, 상기 단계로부터 상기 제2감광막을마스크로 이용하여 상기 제1감광막 및 금속층을 순차적으로 식각한 후 상기 제2감광막을 제거하는 단계와, 상기 단계로부터 상기 금속층상에 남아있는 상기 제1감광막을 제거하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 제조방법.A method of manufacturing a semiconductor device, the method comprising: sequentially forming a metal layer and a first photoresist layer on a silicon substrate and then performing heat treatment; and forming a second photoresist layer on the first photoresist layer, Etching the first photoresist layer and the metal layer sequentially using the second photoresist layer as a mask and removing the second photoresist layer from the first photoresist layer and the metal layer; And removing the photoresist film. 제1항에 있어서, 상기 제1감광막은 400 내지 8000Å의 두께로 형성되는 것을 특징으로 하는 반도체 소자의 제조방법.The method of claim 1, wherein the first photoresist layer is formed to a thickness of 400 to 8000 ANGSTROM. 제1항에 있어서, 상기 열처리는 70 내지 130℃의 온도조건으로 실시되는 것을 특징으로 하는 반도체 소자의 제조방법.The method for manufacturing a semiconductor device according to claim 1, wherein the heat treatment is performed at a temperature of 70 to 130 캜. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960014208A 1996-05-02 1996-05-02 Method of manufacturing semiconductor device KR970077096A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960014208A KR970077096A (en) 1996-05-02 1996-05-02 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960014208A KR970077096A (en) 1996-05-02 1996-05-02 Method of manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
KR970077096A true KR970077096A (en) 1997-12-12

Family

ID=66217130

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960014208A KR970077096A (en) 1996-05-02 1996-05-02 Method of manufacturing semiconductor device

Country Status (1)

Country Link
KR (1) KR970077096A (en)

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