TW347580B - Process for forming a gate - Google Patents

Process for forming a gate

Info

Publication number
TW347580B
TW347580B TW086115646A TW86115646A TW347580B TW 347580 B TW347580 B TW 347580B TW 086115646 A TW086115646 A TW 086115646A TW 86115646 A TW86115646 A TW 86115646A TW 347580 B TW347580 B TW 347580B
Authority
TW
Taiwan
Prior art keywords
layer
sin
gate
silicon nitride
forming
Prior art date
Application number
TW086115646A
Other languages
Chinese (zh)
Inventor
Wen-Yih Tarn
Ming-Hwan Tsay
Jiin-Ruey Lii
Original Assignee
Mos Electronics Taiwan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mos Electronics Taiwan Inc filed Critical Mos Electronics Taiwan Inc
Priority to TW086115646A priority Critical patent/TW347580B/en
Application granted granted Critical
Publication of TW347580B publication Critical patent/TW347580B/en

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A process for producing a gate, which at least comprises the following steps: forming a conductive layer on a substrate; forming a first silicon nitride (SiN) layer on the conductive layer; etching all layers formed in the above steps thereby defining a gate; forming a second silicon nitride (SiN) layer on the gate and the surface of the substrate; and etching the second silicon nitride (SiN) layer thereby forming a spacer on the sidewall of the gate; during the etching step, the first silicon nitride (SiN) layer and the second silicon nitride (SiN) layer having different etching rates, the height of the spacer being higher than the height of the first silicon nitride (SiN) layer.
TW086115646A 1997-10-22 1997-10-22 Process for forming a gate TW347580B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086115646A TW347580B (en) 1997-10-22 1997-10-22 Process for forming a gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086115646A TW347580B (en) 1997-10-22 1997-10-22 Process for forming a gate

Publications (1)

Publication Number Publication Date
TW347580B true TW347580B (en) 1998-12-11

Family

ID=58263991

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086115646A TW347580B (en) 1997-10-22 1997-10-22 Process for forming a gate

Country Status (1)

Country Link
TW (1) TW347580B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202009001980U1 (en) 2009-03-18 2009-08-06 Chen, Chien-Nan Spectacle frame assembly and spectacle frame

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202009001980U1 (en) 2009-03-18 2009-08-06 Chen, Chien-Nan Spectacle frame assembly and spectacle frame

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees