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Application filed by Taiwan Semiconductor Mfg Co LtdfiledCriticalTaiwan Semiconductor Mfg Co Ltd
Priority to TW086104507ApriorityCriticalpatent/TW324853B/en
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Publication of TW324853BpublicationCriticalpatent/TW324853B/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
A manufacturing method for plug, includes following steps: (a) Provide a semiconductor substrate, which is already formed 1st conductive on it; (b) Form dielectric on 1st metal layer; (c) Form an opening in dielectric; (d) Form 2nd conductive layer on circumference surface of opening to fill that opening; (e) Form 3rd conductive layer on 2nd conductive surface; (f) Define that 3rd and 2nd conductive layer to expose dielectric, and form plug in opening, that plug includes 2nd and 3rd conductive layer.
TW086104507A1997-04-091997-04-09The manufacturing method for plug
TW324853B
(en)