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Internal Circuitry In Semiconductor Integrated Circuit Devices
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Abstract
A process for metal interconnection of IC, it includes following steps: (a) Form electricity devices contained transistor structure on semiconductor substrate. (b) Form 1st dielectric layer on whole substrate surface. (c) Define self-aligned contact window, and etch 1st dielectric layer inside the self-aligned contact window. (d) Form thinner 1st dielectric on whole substrate surface and inside the contact window. (e) Form 2nd dielectric layer on whole substrate surface. (f) Define metal interconnection contact window, and etch 2nd dielectric and thinner 1st dielectric inside the metal interconnection contact window. (g) Form metal interconnection layer.
TW086107946A1997-06-101997-06-10The process and structure for metal interconnection of IC
TW334624B
(en)