TW288201B - Process of fabricating high-density memory integrated circuit - Google Patents

Abstract

A process of fabricating Y-shaped conductor comprises the steps of: (1) forming one first insulator on semiconductor substrate; (2) etching the above first insulator to form ladder-shaped hole which has wider top and narrower bottom geometry shape; (3) depositing one conductive layer to fill the narrower bottom of the above ladder-shaped hole, but not to fill wider top of the above ladder-shaped hole, therefore there will leave gap between the above conductive layer of wider top of the above ladder-shaped hole; (4) depositing one second insulator to fill the gap between the above conductive layer of wider top of the above ladder-shaped hole; (5) removing the above second insulator of the above conductive layer, but reserving the second insulator in the above gap so as to form insulator plug constituted by second insulator in the above gap; (6) removing the above conductive layer on the above first insulator, but reserving conductive layer in the above hole; (7) by chemical solution removing the above insulator plug and second insulator, therefore Y-shaped conductive layer is formed.