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Application filed by Mos Electronics Taiwan IncfiledCriticalMos Electronics Taiwan Inc
Priority to TW086111721ApriorityCriticalpatent/TW332331B/en
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Publication of TW332331BpublicationCriticalpatent/TW332331B/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Semiconductor Memories
(AREA)
Abstract
A method for forming peripheral contact in DRAM process, it includes following steps: Form insulating layer on semiconductor substrate; Form photoresist layer on insulating layer, to define the capacitor contact and peripheral contact of DRAM; Use photoresist as mask, to remove insulating layer till exposing the surface of semiconductor substrate, and form capacitor contact and peripheral contact.
TW086111721A1997-08-141997-08-14The method for forming DRAM and peripheral contact
TW332331B
(en)