TW328651B - The producing method and structure for porous-Si capacitor of DRAM - Google Patents
The producing method and structure for porous-Si capacitor of DRAMInfo
- Publication number
- TW328651B TW328651B TW085116193A TW85116193A TW328651B TW 328651 B TW328651 B TW 328651B TW 085116193 A TW085116193 A TW 085116193A TW 85116193 A TW85116193 A TW 85116193A TW 328651 B TW328651 B TW 328651B
- Authority
- TW
- Taiwan
- Prior art keywords
- polysilicon
- hsg
- sio2
- residual
- porous
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
A producing method for IC capacitor includes the following steps: - Form dielectric on semiconductor substrate; - Form polysilicon on dielectric; - Form photoresist on polysilicon; - Use photoresist as mask to etch polysilicon; - Remove photoresist; - Form HSG-Si on polysilicon; - Use HSG-Si as etching mask to etch polysilicon, and form several ditches in polysilicon, and the residual HSG-Si will remain in polysilicon; - Form SiO2 on top of polysilicon & HSG-Si and in trenches; - Etch SiO2 to expose the top of HSG-Si, and the residual SiO2 will remain in trenches; - Use the residual SiO2 as etching mask to anisotropic etching portion of polysilicon and HSG-Si to produce several holes in polysilicon, and the HSG-Si will be removed during the etching process; - Remove residual SiO2 to form porous polysilicon structure; - Form capacitor dielectric to cover the surface of porous polysilicon; - Form conductive on capacitor dielectric.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085116193A TW328651B (en) | 1996-12-27 | 1996-12-27 | The producing method and structure for porous-Si capacitor of DRAM |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085116193A TW328651B (en) | 1996-12-27 | 1996-12-27 | The producing method and structure for porous-Si capacitor of DRAM |
Publications (1)
Publication Number | Publication Date |
---|---|
TW328651B true TW328651B (en) | 1998-03-21 |
Family
ID=58262457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085116193A TW328651B (en) | 1996-12-27 | 1996-12-27 | The producing method and structure for porous-Si capacitor of DRAM |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW328651B (en) |
-
1996
- 1996-12-27 TW TW085116193A patent/TW328651B/en active
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