TW328651B - The producing method and structure for porous-Si capacitor of DRAM - Google Patents

The producing method and structure for porous-Si capacitor of DRAM

Info

Publication number
TW328651B
TW328651B TW085116193A TW85116193A TW328651B TW 328651 B TW328651 B TW 328651B TW 085116193 A TW085116193 A TW 085116193A TW 85116193 A TW85116193 A TW 85116193A TW 328651 B TW328651 B TW 328651B
Authority
TW
Taiwan
Prior art keywords
polysilicon
hsg
sio2
residual
porous
Prior art date
Application number
TW085116193A
Other languages
Chinese (zh)
Inventor
Yih-Jau Jang
Shye-Lin Wu
Original Assignee
Powerchip Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Powerchip Semiconductor Corp filed Critical Powerchip Semiconductor Corp
Priority to TW085116193A priority Critical patent/TW328651B/en
Application granted granted Critical
Publication of TW328651B publication Critical patent/TW328651B/en

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  • Semiconductor Integrated Circuits (AREA)

Abstract

A producing method for IC capacitor includes the following steps: - Form dielectric on semiconductor substrate; - Form polysilicon on dielectric; - Form photoresist on polysilicon; - Use photoresist as mask to etch polysilicon; - Remove photoresist; - Form HSG-Si on polysilicon; - Use HSG-Si as etching mask to etch polysilicon, and form several ditches in polysilicon, and the residual HSG-Si will remain in polysilicon; - Form SiO2 on top of polysilicon & HSG-Si and in trenches; - Etch SiO2 to expose the top of HSG-Si, and the residual SiO2 will remain in trenches; - Use the residual SiO2 as etching mask to anisotropic etching portion of polysilicon and HSG-Si to produce several holes in polysilicon, and the HSG-Si will be removed during the etching process; - Remove residual SiO2 to form porous polysilicon structure; - Form capacitor dielectric to cover the surface of porous polysilicon; - Form conductive on capacitor dielectric.
TW085116193A 1996-12-27 1996-12-27 The producing method and structure for porous-Si capacitor of DRAM TW328651B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085116193A TW328651B (en) 1996-12-27 1996-12-27 The producing method and structure for porous-Si capacitor of DRAM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085116193A TW328651B (en) 1996-12-27 1996-12-27 The producing method and structure for porous-Si capacitor of DRAM

Publications (1)

Publication Number Publication Date
TW328651B true TW328651B (en) 1998-03-21

Family

ID=58262457

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085116193A TW328651B (en) 1996-12-27 1996-12-27 The producing method and structure for porous-Si capacitor of DRAM

Country Status (1)

Country Link
TW (1) TW328651B (en)

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