KR970030361A - Contact hole formation method of semiconductor device - Google Patents
Contact hole formation method of semiconductor device Download PDFInfo
- Publication number
- KR970030361A KR970030361A KR1019950044261A KR19950044261A KR970030361A KR 970030361 A KR970030361 A KR 970030361A KR 1019950044261 A KR1019950044261 A KR 1019950044261A KR 19950044261 A KR19950044261 A KR 19950044261A KR 970030361 A KR970030361 A KR 970030361A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- insulating film
- photoresist pattern
- borophosphosilicate glass
- bpsg
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 장치의 콘택홀 형성방법에 관한 것으로서, 반도체기판상에 폴리실리콘층, 산화막을 형성하고, 그 위에 BPSG(borophosphosilicate glass)절연막을 형성하는 단계; 상기 BPSG(borophosphosilicate glass)절연막 상에포토레지스트 패턴을 형성하는 단계; 마스크를 이용하여 포토(photo) 공정을 수행하여, 마스크에 의해 차단되지 않은 부분의 상기 포토레지스트 패턴을 식각하여 제고하는 단계; 상기 포토레지스트 패턴을 식각마스크로 사용하여 상기 BPSG(borophosphosilicate glass) 절연막을 건식(dry) 방법으로 이방성 식각을 실시하는 단계; 상기 포토레지스트 패턴을 제거하는 단계; 및 열처리 공정을 수행하여 상기 BPSG(borophosphosilicate glass) 절연막 표면을 평탄화하는 단계를 포함한다. 따라서, 단차도포성(step coverage)이 양호해지고 또한 습식식각공정을 거치지 않으므로써 스웰링(swelling) 현상등으로 야기되는 반도체 장치의 집적도 문제를 해결할 수 있는 효과를 제공한다.The present invention relates to a method for forming a contact hole in a semiconductor device, comprising: forming a polysilicon layer and an oxide film on a semiconductor substrate, and forming a borophosphosilicate glass (BPSG) insulating film thereon; Forming a photoresist pattern on the borophosphosilicate glass (BPSG) insulating film; Performing a photo process using a mask to etch and remove the photoresist pattern of a portion not blocked by the mask; Performing anisotropic etching of the borophosphosilicate glass (BPSG) insulating film by a dry method using the photoresist pattern as an etching mask; Removing the photoresist pattern; And planarizing a surface of the borophosphosilicate glass (BPSG) insulating film by performing a heat treatment process. Accordingly, the step coverage is improved and the integration problem of the semiconductor device caused by the swelling phenomenon can be solved by not performing the wet etching process.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제3a도 내지 제3f도는 본 발명에 의한 반도체 장치의 콘택홀 형성방벙을 보이는 도면이다.3A to 3F are views showing how to form contact holes in a semiconductor device according to the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950044261A KR970030361A (en) | 1995-11-28 | 1995-11-28 | Contact hole formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950044261A KR970030361A (en) | 1995-11-28 | 1995-11-28 | Contact hole formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970030361A true KR970030361A (en) | 1997-06-26 |
Family
ID=66589121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950044261A KR970030361A (en) | 1995-11-28 | 1995-11-28 | Contact hole formation method of semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR970030361A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100724472B1 (en) * | 2001-06-26 | 2007-06-04 | 매그나칩 반도체 유한회사 | Method for forming the semiconductor device |
-
1995
- 1995-11-28 KR KR1019950044261A patent/KR970030361A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100724472B1 (en) * | 2001-06-26 | 2007-06-04 | 매그나칩 반도체 유한회사 | Method for forming the semiconductor device |
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