KR970030361A - Contact hole formation method of semiconductor device - Google Patents

Contact hole formation method of semiconductor device Download PDF

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Publication number
KR970030361A
KR970030361A KR1019950044261A KR19950044261A KR970030361A KR 970030361 A KR970030361 A KR 970030361A KR 1019950044261 A KR1019950044261 A KR 1019950044261A KR 19950044261 A KR19950044261 A KR 19950044261A KR 970030361 A KR970030361 A KR 970030361A
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KR
South Korea
Prior art keywords
forming
insulating film
photoresist pattern
borophosphosilicate glass
bpsg
Prior art date
Application number
KR1019950044261A
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Korean (ko)
Inventor
박동한
남주완
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950044261A priority Critical patent/KR970030361A/en
Publication of KR970030361A publication Critical patent/KR970030361A/en

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Abstract

본 발명은 반도체 장치의 콘택홀 형성방법에 관한 것으로서, 반도체기판상에 폴리실리콘층, 산화막을 형성하고, 그 위에 BPSG(borophosphosilicate glass)절연막을 형성하는 단계; 상기 BPSG(borophosphosilicate glass)절연막 상에포토레지스트 패턴을 형성하는 단계; 마스크를 이용하여 포토(photo) 공정을 수행하여, 마스크에 의해 차단되지 않은 부분의 상기 포토레지스트 패턴을 식각하여 제고하는 단계; 상기 포토레지스트 패턴을 식각마스크로 사용하여 상기 BPSG(borophosphosilicate glass) 절연막을 건식(dry) 방법으로 이방성 식각을 실시하는 단계; 상기 포토레지스트 패턴을 제거하는 단계; 및 열처리 공정을 수행하여 상기 BPSG(borophosphosilicate glass) 절연막 표면을 평탄화하는 단계를 포함한다. 따라서, 단차도포성(step coverage)이 양호해지고 또한 습식식각공정을 거치지 않으므로써 스웰링(swelling) 현상등으로 야기되는 반도체 장치의 집적도 문제를 해결할 수 있는 효과를 제공한다.The present invention relates to a method for forming a contact hole in a semiconductor device, comprising: forming a polysilicon layer and an oxide film on a semiconductor substrate, and forming a borophosphosilicate glass (BPSG) insulating film thereon; Forming a photoresist pattern on the borophosphosilicate glass (BPSG) insulating film; Performing a photo process using a mask to etch and remove the photoresist pattern of a portion not blocked by the mask; Performing anisotropic etching of the borophosphosilicate glass (BPSG) insulating film by a dry method using the photoresist pattern as an etching mask; Removing the photoresist pattern; And planarizing a surface of the borophosphosilicate glass (BPSG) insulating film by performing a heat treatment process. Accordingly, the step coverage is improved and the integration problem of the semiconductor device caused by the swelling phenomenon can be solved by not performing the wet etching process.

Description

반도체 장치의 콘택홀 형성방법Contact hole formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3a도 내지 제3f도는 본 발명에 의한 반도체 장치의 콘택홀 형성방벙을 보이는 도면이다.3A to 3F are views showing how to form contact holes in a semiconductor device according to the present invention.

Claims (1)

반도체 장치의 콘택홀 형성방법에 있어서, 반도체기판(300)상에 폴리실리콘층(302), 산화막(304)을 형성하고, 그 위에 BPSG(borophosphosilicate glass) 절연막(306)을 형성하는 단계; 상기 BPSG(borophosphosilicate glass) 절연막(306) 상에 포토레지스트 패턴(308)을 형성하는 단계; 마스크를 이용하여 포토(photo) 공정을 수행하여, 마스크에 의해 차단되지 않은 부분의 상기 포토레지스트 패턴(308)을 식각하여 제고하는 단계; 상기 포토레지스트 패턴(308)을 식각마스크로 사용하여 상기 BPSG(borophosphosilicate glass) 절연막(306)을 건식(dry) 방법으로 이방성 식각을 실시하는 단계; 상기 포토레지스트 패턴(308)을 제거하는 단계; 및 열처리 공정을 수행하여 상기 BPSG(borophosphosilicate glass) 절연막(206) 표면을 평탄화하는 단계를 포함하는 반도체 장치의 콘택홀 형성방법.A method for forming a contact hole in a semiconductor device, the method comprising: forming a polysilicon layer 302 and an oxide film 304 on a semiconductor substrate 300, and forming a borophosphosilicate glass insulating film 306 thereon; Forming a photoresist pattern (308) on the borophosphosilicate glass insulating film (306); Performing a photo process using a mask to etch and enhance the photoresist pattern 308 in a portion not blocked by the mask; Performing anisotropic etching of the borophosphosilicate glass (BPPSG) insulating film 306 by a dry method using the photoresist pattern 308 as an etching mask; Removing the photoresist pattern (308); And planarizing a surface of the borophosphosilicate glass (BPSG) insulating film 206 by performing a heat treatment process.
KR1019950044261A 1995-11-28 1995-11-28 Contact hole formation method of semiconductor device KR970030361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950044261A KR970030361A (en) 1995-11-28 1995-11-28 Contact hole formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950044261A KR970030361A (en) 1995-11-28 1995-11-28 Contact hole formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR970030361A true KR970030361A (en) 1997-06-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950044261A KR970030361A (en) 1995-11-28 1995-11-28 Contact hole formation method of semiconductor device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100724472B1 (en) * 2001-06-26 2007-06-04 매그나칩 반도체 유한회사 Method for forming the semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100724472B1 (en) * 2001-06-26 2007-06-04 매그나칩 반도체 유한회사 Method for forming the semiconductor device

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